JP2003502857A - ＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層 - Google Patents

＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層

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Publication number
JP2003502857A
JP2003502857A JP2001505042A JP2001505042A JP2003502857A JP 2003502857 A JP2003502857 A JP 2003502857A JP 2001505042 A JP2001505042 A JP 2001505042A JP 2001505042 A JP2001505042 A JP 2001505042A JP 2003502857 A JP2003502857 A JP 2003502857A
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Japan
Prior art keywords
sic
film
substrate
silicon carbide
epitaxial
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Pending
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JP2001505042A
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English (en)
Japanese (ja)
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JP2003502857A5 (https=
Inventor
ランディニ，バーバラ，イー．
ブランデス，ジョージ，アール．
ティシュラー，マイケル，エー．
Original Assignee
アドバンスド．テクノロジー．マテリアルス．インコーポレイテッド
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Publication of JP2003502857A publication Critical patent/JP2003502857A/ja
Publication of JP2003502857A5 publication Critical patent/JP2003502857A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777—Edge feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001505042A 1999-06-24 2000-06-01 ＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層 Pending JP2003502857A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/339,510 US6329088B1 (en) 1999-06-24 1999-06-24 Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
US09/339,510 1999-06-24
PCT/US2000/015155 WO2000079570A2 (en) 1999-06-24 2000-06-01 Silicon carbide epitaxial layers grown on substrates offcut towards <1100>

Publications (2)

Publication Number Publication Date
JP2003502857A true JP2003502857A (ja) 2003-01-21
JP2003502857A5 JP2003502857A5 (https=) 2009-05-28

Family

ID=23329332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001505042A Pending JP2003502857A (ja) 1999-06-24 2000-06-01 ＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層

Country Status (7)

Country Link
US (2) US6329088B1 (https=)
EP (1) EP1214190A4 (https=)
JP (1) JP2003502857A (https=)
KR (1) KR100716522B1 (https=)
CN (1) CN1164417C (https=)
AU (1) AU7699300A (https=)
WO (1) WO2000079570A2 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
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JP2003234301A (ja) * 2001-10-25 2003-08-22 Matsushita Electric Ind Co Ltd 半導体基板、半導体素子及びその製造方法
WO2005017986A1 (ja) * 2003-08-19 2005-02-24 National Institute Of Advanced Industrial Science And Technology 炭化珪素エピタキシャルウエハ、同ウエハの製造方法及び同ウエハ上に作製された半導体装置
JP2007281157A (ja) * 2006-04-06 2007-10-25 Mitsubishi Electric Corp 半導体装置の製造方法
US8097524B2 (en) 2002-08-30 2012-01-17 Norstel Ab Lightly doped silicon carbide wafer and use thereof in high power devices
US9111844B2 (en) 2013-08-01 2015-08-18 Kabushiki Kaisha Toshiba Semiconductor device having silicon carbide epitaxial layers and method of manufacturing the same
JP2016052994A (ja) * 2015-11-13 2016-04-14 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP2017069239A (ja) * 2015-09-28 2017-04-06 新日鐵住金株式会社 炭化珪素のエピタキシャル成長方法
US10748763B2 (en) 2017-09-29 2020-08-18 Fuji Electric Co., Ltd. Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor device

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US6329088B1 (en) * 1999-06-24 2001-12-11 Advanced Technology Materials, Inc. Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
US6508880B2 (en) * 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US7009209B2 (en) * 2001-01-03 2006-03-07 Mississippi State University Research And Technology Corporation (Rtc) Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
EP1306890A2 (en) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
US7138291B2 (en) 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
CA2474883A1 (en) * 2002-02-08 2003-08-14 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition
US6740568B2 (en) * 2002-07-29 2004-05-25 Infineon Technologies Ag Method to enhance epitaxial regrowth in amorphous silicon contacts
JP4188637B2 (ja) * 2002-08-05 2008-11-26 独立行政法人産業技術総合研究所 半導体装置
KR20050084685A (ko) * 2002-11-25 2005-08-26 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 반도체장치 및 그 반도체장치를 이용한 전력변환기, 구동용인버터, 범용 인버터, 대전력 고주파 통신기기
JP4419409B2 (ja) * 2002-12-25 2010-02-24 住友電気工業株式会社 Ｃｖｄエピタキシャル成長方法
US6747291B1 (en) 2003-01-10 2004-06-08 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on p-type silicon carbide using carbon films
JP2005079339A (ja) * 2003-08-29 2005-03-24 National Institute Of Advanced Industrial & Technology 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
CN100533663C (zh) * 2004-03-18 2009-08-26 克里公司 减少堆垛层错成核位置的光刻方法和具有减少的堆垛层错位置的结构
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP2007182330A (ja) 2004-08-24 2007-07-19 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
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US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
JP2006303152A (ja) * 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd エピタキシャル成膜装置およびエピタキシャル成膜方法
US8221549B2 (en) * 2005-04-22 2012-07-17 Bridgestone Corporation Silicon carbide single crystal wafer and producing method thereof
WO2006138052A1 (en) * 2005-06-13 2006-12-28 Exxonmobil Chemical Patents Inc. Thermoplastic blend compositions
KR100711521B1 (ko) * 2005-12-20 2007-04-27 한국전기연구원 금속충전을 이용한 결함제거 에픽탁시 박막의 제조방법
CA2584950A1 (en) * 2006-04-26 2007-10-26 Kansai Paint Co., Ltd. Powder primer composition and method for forming coating film
WO2007130916A2 (en) * 2006-05-01 2007-11-15 Applied Materials, Inc. A method of ultra-shallow junction formation using si film alloyed with carbon
US8362460B2 (en) 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
US7872252B2 (en) * 2006-08-11 2011-01-18 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
ITMI20061809A1 (it) * 2006-09-25 2008-03-26 E T C Srl Processo per realizzare un sustrato di carburo di silicio per applicazioni microelettroniche
EP2207911A1 (en) * 2007-08-17 2010-07-21 Epispeed S.A. Apparatus and method for producing epitaxial layers
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP4959763B2 (ja) 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US8574528B2 (en) * 2009-09-04 2013-11-05 University Of South Carolina Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
US20110265616A1 (en) * 2010-04-30 2011-11-03 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Ultra-pure, single-crystal sic cutting tool for ultra-precision machining
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
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CN107059135B (zh) * 2011-06-02 2019-08-13 住友电气工业株式会社 碳化硅基板的制造方法
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US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
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US9322110B2 (en) 2013-02-21 2016-04-26 Ii-Vi Incorporated Vanadium doped SiC single crystals and method thereof
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP2014187113A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 気相成長装置および気相成長方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
KR101634557B1 (ko) 2015-06-11 2016-06-29 김용빈 조립식 돔 하우스
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JP7248539B2 (ja) * 2019-08-13 2023-03-29 株式会社日立製作所 圧力伝送装置および原子力発電プラント計測システム
RU2749573C9 (ru) * 2020-10-13 2021-08-17 Федеральное государственное бюджетное образовательное учреждение высшего образования "ДАГЕСТАНСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ" Способ получения тонких пленок карбида кремния на кремнии пиролизом полимерных пленок, полученных методом молекулярно-слоевого осаждения

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US6329088B1 (en) * 1999-06-24 2001-12-11 Advanced Technology Materials, Inc. Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234301A (ja) * 2001-10-25 2003-08-22 Matsushita Electric Ind Co Ltd 半導体基板、半導体素子及びその製造方法
US8097524B2 (en) 2002-08-30 2012-01-17 Norstel Ab Lightly doped silicon carbide wafer and use thereof in high power devices
US8803160B2 (en) 2002-08-30 2014-08-12 Siced Electronics Development Gmbh & Co. Kg Lightly doped silicon carbide wafer and use thereof in high power devices
JP2015099932A (ja) * 2002-08-30 2015-05-28 ノーステル エービー 半導体装置
WO2005017986A1 (ja) * 2003-08-19 2005-02-24 National Institute Of Advanced Industrial Science And Technology 炭化珪素エピタキシャルウエハ、同ウエハの製造方法及び同ウエハ上に作製された半導体装置
JP2007281157A (ja) * 2006-04-06 2007-10-25 Mitsubishi Electric Corp 半導体装置の製造方法
US9111844B2 (en) 2013-08-01 2015-08-18 Kabushiki Kaisha Toshiba Semiconductor device having silicon carbide epitaxial layers and method of manufacturing the same
JP2017069239A (ja) * 2015-09-28 2017-04-06 新日鐵住金株式会社 炭化珪素のエピタキシャル成長方法
JP2016052994A (ja) * 2015-11-13 2016-04-14 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
US10748763B2 (en) 2017-09-29 2020-08-18 Fuji Electric Co., Ltd. Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor device

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US6329088B1 (en) 2001-12-11
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WO2000079570A3 (en) 2001-06-28
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