JP2000232239A5 - - Google Patents

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Publication number
JP2000232239A5
JP2000232239A5 JP1999037826A JP3782699A JP2000232239A5 JP 2000232239 A5 JP2000232239 A5 JP 2000232239A5 JP 1999037826 A JP1999037826 A JP 1999037826A JP 3782699 A JP3782699 A JP 3782699A JP 2000232239 A5 JP2000232239 A5 JP 2000232239A5
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JP
Japan
Prior art keywords
nitride semiconductor
growing
protective film
substrate
impurities
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Application number
JP1999037826A
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English (en)
Japanese (ja)
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JP2000232239A (ja
JP4304750B2 (ja
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Priority to JP03782699A priority Critical patent/JP4304750B2/ja
Priority claimed from JP03782699A external-priority patent/JP4304750B2/ja
Publication of JP2000232239A publication Critical patent/JP2000232239A/ja
Publication of JP2000232239A5 publication Critical patent/JP2000232239A5/ja
Application granted granted Critical
Publication of JP4304750B2 publication Critical patent/JP4304750B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP03782699A 1998-12-08 1999-02-16 窒化物半導体の成長方法及び窒化物半導体素子 Expired - Fee Related JP4304750B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03782699A JP4304750B2 (ja) 1998-12-08 1999-02-16 窒化物半導体の成長方法及び窒化物半導体素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34876198 1998-12-08
JP10-348761 1998-12-08
JP03782699A JP4304750B2 (ja) 1998-12-08 1999-02-16 窒化物半導体の成長方法及び窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2000232239A JP2000232239A (ja) 2000-08-22
JP2000232239A5 true JP2000232239A5 (https=) 2006-04-27
JP4304750B2 JP4304750B2 (ja) 2009-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP03782699A Expired - Fee Related JP4304750B2 (ja) 1998-12-08 1999-02-16 窒化物半導体の成長方法及び窒化物半導体素子

Country Status (1)

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JP (1) JP4304750B2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001185493A (ja) * 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
WO2001069663A1 (fr) 2000-03-14 2001-09-20 Toyoda Gosei Co., Ltd. Procede de production de semiconducteur a base de compose de nitrure iii et element en semiconducteur a base de compose de nitrure iii
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
WO2002021604A1 (en) * 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
WO2002039555A1 (en) 2000-11-10 2002-05-16 Sharp Kabushiki Kaisha Nitride semiconductor luminous element and optical device including it
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP3705142B2 (ja) * 2001-03-27 2005-10-12 ソニー株式会社 窒化物半導体素子及びその作製方法
JP2004262757A (ja) * 2001-04-24 2004-09-24 Sony Corp 窒化物半導体、半導体素子およびこれらの製造方法
JP3690326B2 (ja) 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
WO2003089696A1 (en) 2002-04-15 2003-10-30 The Regents Of The University Of California Dislocation reduction in non-polar gallium nitride thin films
JP5103014B2 (ja) * 2003-05-21 2012-12-19 サン−ゴバン クリストー エ デテクトゥール マスクを通るラテラル成長による窒化ガリウム基板の製造
EP1619729B1 (en) * 2004-04-16 2010-02-10 Nitride Semiconductors Co., Ltd. Gallium nitride based light-emitting device
JP5323412B2 (ja) * 2008-07-25 2013-10-23 シャープ株式会社 電界効果トランジスタ
JP5489117B2 (ja) 2009-09-01 2014-05-14 シャープ株式会社 窒化物半導体素子、窒化物半導体素子の製造方法、窒化物半導体層の製造方法および窒化物半導体発光素子
JP5705179B2 (ja) * 2012-08-15 2015-04-22 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法
JP2017092075A (ja) * 2015-11-02 2017-05-25 株式会社ソディック 発光素子
GB2593693B (en) * 2020-03-30 2022-08-03 Plessey Semiconductors Ltd LED precursor

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