JP2005508086A5 - - Google Patents

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Publication number
JP2005508086A5
JP2005508086A5 JP2003541034A JP2003541034A JP2005508086A5 JP 2005508086 A5 JP2005508086 A5 JP 2005508086A5 JP 2003541034 A JP2003541034 A JP 2003541034A JP 2003541034 A JP2003541034 A JP 2003541034A JP 2005508086 A5 JP2005508086 A5 JP 2005508086A5
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JP
Japan
Prior art keywords
region
bipolar device
type
diode
substrate
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JP2003541034A
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English (en)
Japanese (ja)
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JP2005508086A (ja
JP4597514B2 (ja
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Priority claimed from US10/046,346 external-priority patent/US6849874B2/en
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Publication of JP2005508086A publication Critical patent/JP2005508086A/ja
Publication of JP2005508086A5 publication Critical patent/JP2005508086A5/ja
Application granted granted Critical
Publication of JP4597514B2 publication Critical patent/JP4597514B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003541034A 2001-10-26 2002-09-24 劣化を最少に抑えたＳｉＣバイポーラ半導体デバイス Expired - Lifetime JP4597514B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/046,346 US6849874B2 (en) 2001-10-26 2001-10-26 Minimizing degradation of SiC bipolar semiconductor devices
PCT/US2002/030230 WO2003038876A1 (en) 2001-10-26 2002-09-24 Sic bipolar semiconductor devices with few crystal defects

Publications (3)

Publication Number Publication Date
JP2005508086A JP2005508086A (ja) 2005-03-24
JP2005508086A5 true JP2005508086A5 (https=) 2006-01-05
JP4597514B2 JP4597514B2 (ja) 2010-12-15

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Family Applications (1)

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JP2003541034A Expired - Lifetime JP4597514B2 (ja) 2001-10-26 2002-09-24 劣化を最少に抑えたＳｉＣバイポーラ半導体デバイス

Country Status (8)

Country Link
US (4) US6849874B2 (https=)
EP (1) EP1438739B1 (https=)
JP (1) JP4597514B2 (https=)
KR (1) KR101036253B1 (https=)
CN (1) CN100369196C (https=)
CA (1) CA2457399A1 (https=)
TW (1) TWI229421B (https=)
WO (1) WO2003038876A1 (https=)

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