CA2457399A1 - Sic bipolar semiconductor devices with few crystal defects - Google Patents
Sic bipolar semiconductor devices with few crystal defects Download PDFInfo
- Publication number
- CA2457399A1 CA2457399A1 CA002457399A CA2457399A CA2457399A1 CA 2457399 A1 CA2457399 A1 CA 2457399A1 CA 002457399 A CA002457399 A CA 002457399A CA 2457399 A CA2457399 A CA 2457399A CA 2457399 A1 CA2457399 A1 CA 2457399A1
- Authority
- CA
- Canada
- Prior art keywords
- region
- layer
- type
- substrate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000013078 crystal Substances 0.000 title claims description 23
- 230000007547 defect Effects 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims description 60
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 59
- 238000009792 diffusion process Methods 0.000 claims description 30
- 230000000903 blocking effect Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 16
- 230000002441 reversible effect Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 13
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/046,346 US6849874B2 (en) | 2001-10-26 | 2001-10-26 | Minimizing degradation of SiC bipolar semiconductor devices |
| US10/046,346 | 2001-10-26 | ||
| PCT/US2002/030230 WO2003038876A1 (en) | 2001-10-26 | 2002-09-24 | Sic bipolar semiconductor devices with few crystal defects |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2457399A1 true CA2457399A1 (en) | 2003-05-08 |
Family
ID=21942959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002457399A Abandoned CA2457399A1 (en) | 2001-10-26 | 2002-09-24 | Sic bipolar semiconductor devices with few crystal defects |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US6849874B2 (https=) |
| EP (1) | EP1438739B1 (https=) |
| JP (1) | JP4597514B2 (https=) |
| KR (1) | KR101036253B1 (https=) |
| CN (1) | CN100369196C (https=) |
| CA (1) | CA2457399A1 (https=) |
| TW (1) | TWI229421B (https=) |
| WO (1) | WO2003038876A1 (https=) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849874B2 (en) * | 2001-10-26 | 2005-02-01 | Cree, Inc. | Minimizing degradation of SiC bipolar semiconductor devices |
| US6900477B1 (en) * | 2001-12-07 | 2005-05-31 | The United States Of America As Represented By The Secretary Of The Army | Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture |
| US6982440B2 (en) * | 2002-02-19 | 2006-01-03 | Powersicel, Inc. | Silicon carbide semiconductor devices with a regrown contact layer |
| CN101165860B (zh) * | 2003-08-22 | 2010-04-07 | 关西电力株式会社 | 半导体装置及制造方法、使用该半导体装置的电力变换装置 |
| US7018554B2 (en) | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
| JP2005167035A (ja) | 2003-12-03 | 2005-06-23 | Kansai Electric Power Co Inc:The | 炭化珪素半導体素子およびその製造方法 |
| US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
| US7173285B2 (en) * | 2004-03-18 | 2007-02-06 | Cree, Inc. | Lithographic methods to reduce stacking fault nucleation sites |
| WO2005093796A1 (ja) * | 2004-03-26 | 2005-10-06 | The Kansai Electric Power Co., Inc. | バイポーラ型半導体装置およびその製造方法 |
| EP1619276B1 (en) * | 2004-07-19 | 2017-01-11 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
| US7192482B2 (en) * | 2004-08-10 | 2007-03-20 | Cree, Inc. | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| US7294324B2 (en) * | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
| US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
| US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
| US7391058B2 (en) * | 2005-06-27 | 2008-06-24 | General Electric Company | Semiconductor devices and methods of making same |
| WO2007032214A1 (ja) * | 2005-09-14 | 2007-03-22 | The Kansai Electric Power Co., Inc. | 炭化珪素半導体素子の製造方法 |
| US7304334B2 (en) * | 2005-09-16 | 2007-12-04 | Cree, Inc. | Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same |
| DE102005046707B3 (de) * | 2005-09-29 | 2007-05-03 | Siced Electronics Development Gmbh & Co. Kg | SiC-PN-Leistungsdiode |
| JP5386177B2 (ja) * | 2006-01-10 | 2014-01-15 | クリー インコーポレイテッド | 炭化珪素ディンプル基板 |
| KR100793607B1 (ko) * | 2006-06-27 | 2008-01-10 | 매그나칩 반도체 유한회사 | 에피텍셜 실리콘 웨이퍼 및 그 제조방법 |
| WO2008015766A1 (fr) * | 2006-08-04 | 2008-02-07 | The Kansai Electric Power Co., Inc. | Procédé pour récupérer une tension directe d'un dispositif à semi-conducteurs bipolaire, procédé de réduction de défaut de laminage et dispositif à semi-conducteurs bipolaire |
| CA2676395C (en) | 2007-01-23 | 2015-09-15 | Carnegie Mellon University | Controlling access to computer systems and for annotating media files |
| SE532625C2 (sv) * | 2007-04-11 | 2010-03-09 | Transic Ab | Halvledarkomponent i kiselkarbid |
| US7915143B2 (en) * | 2008-04-30 | 2011-03-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of mediating forward voltage drift in a SiC device |
| US8542251B1 (en) | 2008-10-20 | 2013-09-24 | Google Inc. | Access using image-based manipulation |
| US8136167B1 (en) | 2008-10-20 | 2012-03-13 | Google Inc. | Systems and methods for providing image feedback |
| US8621396B1 (en) | 2008-10-20 | 2013-12-31 | Google Inc. | Access using image-based manipulation |
| US8716835B2 (en) | 2008-10-21 | 2014-05-06 | Renesas Electronics Corporation | Bipolar transistor |
| US8395237B2 (en) * | 2008-10-21 | 2013-03-12 | Nec Corporation | Group nitride bipolar transistor |
| US8196198B1 (en) | 2008-12-29 | 2012-06-05 | Google Inc. | Access using images |
| US8392986B1 (en) | 2009-06-17 | 2013-03-05 | Google Inc. | Evaluating text-based access strings |
| US8377806B2 (en) * | 2010-04-28 | 2013-02-19 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
| FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
| FR2963983B1 (fr) * | 2010-08-18 | 2012-09-07 | St Microelectronics Tours Sas | Composant de protection bidirectionnel dissymetrique |
| EP2619796A2 (en) * | 2010-09-21 | 2013-07-31 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
| JP5639828B2 (ja) * | 2010-09-27 | 2014-12-10 | 株式会社日立製作所 | 半導体記憶装置およびその製造方法 |
| SE1051137A1 (sv) | 2010-10-29 | 2012-04-30 | Fairchild Semiconductor | Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav |
| JP2012164790A (ja) | 2011-02-07 | 2012-08-30 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
| US9171977B2 (en) | 2011-06-17 | 2015-10-27 | Cree, Inc. | Optically assist-triggered wide bandgap thyristors having positive temperature coefficients |
| WO2013107508A1 (en) * | 2012-01-18 | 2013-07-25 | Fairchild Semiconductor Corporation | Bipolar junction transistor with spacer layer and method of manufacturing the same |
| CN102610638B (zh) * | 2012-03-22 | 2014-04-16 | 西安电子科技大学 | 用于功率集成电路的SiC-BJT器件及其制作方法 |
| TW201417150A (zh) * | 2012-10-31 | 2014-05-01 | Ｌｇ伊諾特股份有限公司 | 磊晶晶圓 |
| US9793355B2 (en) | 2012-11-30 | 2017-10-17 | Lg Innotek Co., Ltd. | Epitaxial wafer and switch element and light-emitting element using same |
| KR102053077B1 (ko) * | 2012-11-30 | 2020-01-08 | 엘지이노텍 주식회사 | 에피택셜 웨이퍼 및 그 제조 방법 |
| KR102098209B1 (ko) * | 2013-02-05 | 2020-04-08 | 엘지이노텍 주식회사 | 에피택셜 웨이퍼 및 그 제조 방법 |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| JP5958663B1 (ja) * | 2014-11-12 | 2016-08-02 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板 |
| CN107430995B (zh) | 2015-05-18 | 2020-07-03 | 住友电气工业株式会社 | 碳化硅外延基板的制造方法、碳化硅外延基板、碳化硅半导体装置的制造方法和碳化硅半导体装置 |
| JP6737186B2 (ja) * | 2015-10-27 | 2020-08-05 | 住友電気工業株式会社 | 炭化珪素基板 |
| JP6706786B2 (ja) * | 2015-10-30 | 2020-06-10 | 一般財団法人電力中央研究所 | エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置 |
| JP6762484B2 (ja) * | 2017-01-10 | 2020-09-30 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| CN112447498A (zh) * | 2019-08-29 | 2021-03-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 降低双极型器件正向导通SFs拓展的SiC外延层生长方法、结构及生长方法供气管路 |
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| US5230768A (en) * | 1990-03-26 | 1993-07-27 | Sharp Kabushiki Kaisha | Method for the production of SiC single crystals by using a specific substrate crystal orientation |
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| SE9603738D0 (sv) | 1996-10-14 | 1996-10-14 | Abb Research Ltd | A method for producing a bipolar semiconductor device and a bipolar semiconductor device |
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| JP4192353B2 (ja) | 1999-09-21 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
| JP2001158696A (ja) * | 1999-11-29 | 2001-06-12 | Toyota Central Res & Dev Lab Inc | 炭化珪素単結晶の製造方法 |
| JP4329211B2 (ja) * | 2000-03-01 | 2009-09-09 | 株式会社デンソー | 炭化珪素単結晶を用いた炭化珪素半導体装置およびその製造方法 |
| US6512384B1 (en) * | 2000-06-29 | 2003-01-28 | Semiconductor Diagnostics, Inc. | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages |
| US6849874B2 (en) | 2001-10-26 | 2005-02-01 | Cree, Inc. | Minimizing degradation of SiC bipolar semiconductor devices |
-
2001
- 2001-10-26 US US10/046,346 patent/US6849874B2/en not_active Expired - Lifetime
-
2002
- 2002-09-24 WO PCT/US2002/030230 patent/WO2003038876A1/en not_active Ceased
- 2002-09-24 JP JP2003541034A patent/JP4597514B2/ja not_active Expired - Lifetime
- 2002-09-24 KR KR1020047003506A patent/KR101036253B1/ko not_active Expired - Lifetime
- 2002-09-24 CN CNB028187199A patent/CN100369196C/zh not_active Expired - Lifetime
- 2002-09-24 EP EP02770545.8A patent/EP1438739B1/en not_active Expired - Lifetime
- 2002-09-24 CA CA002457399A patent/CA2457399A1/en not_active Abandoned
- 2002-10-09 TW TW091123295A patent/TWI229421B/zh not_active IP Right Cessation
-
2004
- 2004-12-22 US US11/022,544 patent/US20050118746A1/en not_active Abandoned
- 2004-12-22 US US11/022,520 patent/US7880171B2/en not_active Expired - Lifetime
-
2006
- 2006-11-16 US US11/560,575 patent/US7427326B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1438739B1 (en) | 2019-06-26 |
| JP2005508086A (ja) | 2005-03-24 |
| US20050118746A1 (en) | 2005-06-02 |
| KR101036253B1 (ko) | 2011-05-20 |
| US6849874B2 (en) | 2005-02-01 |
| CN1559080A (zh) | 2004-12-29 |
| US20070117336A1 (en) | 2007-05-24 |
| EP1438739A1 (en) | 2004-07-21 |
| WO2003038876A1 (en) | 2003-05-08 |
| TWI229421B (en) | 2005-03-11 |
| JP4597514B2 (ja) | 2010-12-15 |
| US20050116234A1 (en) | 2005-06-02 |
| US7880171B2 (en) | 2011-02-01 |
| US20030080842A1 (en) | 2003-05-01 |
| CN100369196C (zh) | 2008-02-13 |
| KR20050030239A (ko) | 2005-03-29 |
| US7427326B2 (en) | 2008-09-23 |
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