JP4016598B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4016598B2
JP4016598B2 JP2001007158A JP2001007158A JP4016598B2 JP 4016598 B2 JP4016598 B2 JP 4016598B2 JP 2001007158 A JP2001007158 A JP 2001007158A JP 2001007158 A JP2001007158 A JP 2001007158A JP 4016598 B2 JP4016598 B2 JP 4016598B2
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JP
Japan
Prior art keywords
substrate
cleaning
gas
wafer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001007158A
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English (en)
Japanese (ja)
Other versions
JP2002217169A (ja
JP2002217169A5 (enExample
Inventor
賢悦 横川
義典 桃井
和典 辻本
新一 田地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001007158A priority Critical patent/JP4016598B2/ja
Priority to KR1020010029896A priority patent/KR100856175B1/ko
Priority to TW090117583A priority patent/TW525247B/zh
Priority to US09/939,770 priority patent/US6713401B2/en
Publication of JP2002217169A publication Critical patent/JP2002217169A/ja
Publication of JP2002217169A5 publication Critical patent/JP2002217169A5/ja
Application granted granted Critical
Publication of JP4016598B2 publication Critical patent/JP4016598B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2001007158A 2001-01-16 2001-01-16 半導体装置の製造方法 Expired - Fee Related JP4016598B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001007158A JP4016598B2 (ja) 2001-01-16 2001-01-16 半導体装置の製造方法
KR1020010029896A KR100856175B1 (ko) 2001-01-16 2001-05-30 반도체장치의 제조방법
TW090117583A TW525247B (en) 2001-01-16 2001-07-18 Method for a manufacturing a semiconductor device
US09/939,770 US6713401B2 (en) 2001-01-16 2001-08-28 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001007158A JP4016598B2 (ja) 2001-01-16 2001-01-16 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002217169A JP2002217169A (ja) 2002-08-02
JP2002217169A5 JP2002217169A5 (enExample) 2005-08-04
JP4016598B2 true JP4016598B2 (ja) 2007-12-05

Family

ID=18874942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001007158A Expired - Fee Related JP4016598B2 (ja) 2001-01-16 2001-01-16 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6713401B2 (enExample)
JP (1) JP4016598B2 (enExample)
KR (1) KR100856175B1 (enExample)
TW (1) TW525247B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3997859B2 (ja) * 2002-07-25 2007-10-24 株式会社日立製作所 半導体装置の製造方法および製造装置
SG140469A1 (en) * 2002-09-30 2008-03-28 Lam Res Corp System for substrate processing with meniscus, vacuum, ipa vapor, drying manifold
WO2004107426A1 (ja) * 2003-05-27 2004-12-09 Personal Creation Ltd. 磁石を備えた基板の処理装置及び処理方法
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
JP4933789B2 (ja) 2006-02-13 2012-05-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
CN101331594B (zh) * 2006-06-22 2012-03-28 里巴贝鲁株式会社 处理装置、处理方法及等离子源
KR100842745B1 (ko) * 2006-11-30 2008-07-01 주식회사 하이닉스반도체 스캔 인젝터를 가지는 플라즈마 공정 장비 및 공정 방법
JP2008153007A (ja) * 2006-12-15 2008-07-03 Nisshin:Kk プラズマ発生装置
JP4503095B2 (ja) 2007-05-15 2010-07-14 キヤノンアネルバ株式会社 半導体素子の製造方法
EP2036856B1 (en) * 2007-09-04 2018-09-12 Mitsubishi Materials Corporation Clean bench and method of producing raw material for single crystal silicon
WO2009057223A1 (ja) 2007-11-02 2009-05-07 Canon Anelva Corporation 表面処理装置およびその基板処理方法
JP5452894B2 (ja) * 2008-07-17 2014-03-26 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP5583503B2 (ja) * 2010-07-14 2014-09-03 東京エレクトロン株式会社 基板洗浄装置、およびこれを備える塗布現像装置
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
US10895539B2 (en) * 2017-10-20 2021-01-19 Lam Research Corporation In-situ chamber clean end point detection systems and methods using computer vision systems
CN114743853A (zh) * 2021-01-07 2022-07-12 中国科学院微电子研究所 一种半导体处理腔室、设备及半导体处理方法
US12406837B2 (en) * 2022-06-15 2025-09-02 Applied Materials, Inc. Reaction cell for species sensing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68909422T2 (de) * 1988-01-11 1994-01-27 Etec Systems Inc Berührungsloses Reinigungsverfahren für Oberflächen mit Hilfe eines flachen Luftkissenlagers.
US5403434A (en) * 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3348804B2 (ja) 1994-09-20 2002-11-20 株式会社日立製作所 エッチング後処理方法
JP3563462B2 (ja) 1994-11-15 2004-09-08 松下エコシステムズ株式会社 活性空気による乾式洗浄方法とその装置、および除電方法
JPH0917776A (ja) 1995-06-27 1997-01-17 Sony Corp 半導体装置の製造方法及び半導体製造装置
US5914278A (en) * 1997-01-23 1999-06-22 Gasonics International Backside etch process chamber and method
JPH10256231A (ja) * 1997-03-10 1998-09-25 Sony Corp ウエハ処理装置及びウエハ処理方法
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing

Also Published As

Publication number Publication date
KR100856175B1 (ko) 2008-09-03
TW525247B (en) 2003-03-21
US6713401B2 (en) 2004-03-30
US20020094691A1 (en) 2002-07-18
JP2002217169A (ja) 2002-08-02
KR20020061458A (ko) 2002-07-24

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