TW525247B - Method for a manufacturing a semiconductor device - Google Patents
Method for a manufacturing a semiconductor device Download PDFInfo
- Publication number
- TW525247B TW525247B TW090117583A TW90117583A TW525247B TW 525247 B TW525247 B TW 525247B TW 090117583 A TW090117583 A TW 090117583A TW 90117583 A TW90117583 A TW 90117583A TW 525247 B TW525247 B TW 525247B
- Authority
- TW
- Taiwan
- Prior art keywords
- main surface
- manufacturing
- semiconductor
- wafer
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 150
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 85
- 238000004140 cleaning Methods 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000001312 dry etching Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims description 98
- 239000007789 gas Substances 0.000 claims description 89
- 239000012535 impurity Substances 0.000 claims description 52
- 238000005530 etching Methods 0.000 claims description 31
- 238000005406 washing Methods 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000004380 ashing Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 6
- 238000003780 insertion Methods 0.000 claims 2
- 230000037431 insertion Effects 0.000 claims 2
- 210000000481 breast Anatomy 0.000 claims 1
- 230000000704 physical effect Effects 0.000 abstract description 9
- 230000009471 action Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 181
- 230000007246 mechanism Effects 0.000 description 32
- 230000000694 effects Effects 0.000 description 25
- 238000001179 sorption measurement Methods 0.000 description 14
- 238000005108 dry cleaning Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000012805 post-processing Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000005416 organic matter Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- -1 Bespel Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 101710085003 Alpha-tubulin N-acetyltransferase Proteins 0.000 description 1
- 101710085461 Alpha-tubulin N-acetyltransferase 1 Proteins 0.000 description 1
- 229920004943 Delrin® Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008407 joint function Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001007158A JP4016598B2 (ja) | 2001-01-16 | 2001-01-16 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW525247B true TW525247B (en) | 2003-03-21 |
Family
ID=18874942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090117583A TW525247B (en) | 2001-01-16 | 2001-07-18 | Method for a manufacturing a semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6713401B2 (enExample) |
| JP (1) | JP4016598B2 (enExample) |
| KR (1) | KR100856175B1 (enExample) |
| TW (1) | TW525247B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3997859B2 (ja) * | 2002-07-25 | 2007-10-24 | 株式会社日立製作所 | 半導体装置の製造方法および製造装置 |
| SG140469A1 (en) * | 2002-09-30 | 2008-03-28 | Lam Res Corp | System for substrate processing with meniscus, vacuum, ipa vapor, drying manifold |
| WO2004107426A1 (ja) * | 2003-05-27 | 2004-12-09 | Personal Creation Ltd. | 磁石を備えた基板の処理装置及び処理方法 |
| JP2006167849A (ja) * | 2004-12-15 | 2006-06-29 | Denso Corp | マイクロ構造体の製造方法 |
| JP4933789B2 (ja) | 2006-02-13 | 2012-05-16 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| CN101331594B (zh) * | 2006-06-22 | 2012-03-28 | 里巴贝鲁株式会社 | 处理装置、处理方法及等离子源 |
| KR100842745B1 (ko) * | 2006-11-30 | 2008-07-01 | 주식회사 하이닉스반도체 | 스캔 인젝터를 가지는 플라즈마 공정 장비 및 공정 방법 |
| JP2008153007A (ja) * | 2006-12-15 | 2008-07-03 | Nisshin:Kk | プラズマ発生装置 |
| JP4503095B2 (ja) | 2007-05-15 | 2010-07-14 | キヤノンアネルバ株式会社 | 半導体素子の製造方法 |
| EP2036856B1 (en) * | 2007-09-04 | 2018-09-12 | Mitsubishi Materials Corporation | Clean bench and method of producing raw material for single crystal silicon |
| WO2009057223A1 (ja) | 2007-11-02 | 2009-05-07 | Canon Anelva Corporation | 表面処理装置およびその基板処理方法 |
| JP5452894B2 (ja) * | 2008-07-17 | 2014-03-26 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
| JP5583503B2 (ja) * | 2010-07-14 | 2014-09-03 | 東京エレクトロン株式会社 | 基板洗浄装置、およびこれを備える塗布現像装置 |
| US8844793B2 (en) * | 2010-11-05 | 2014-09-30 | Raytheon Company | Reducing formation of oxide on solder |
| CN104425289B (zh) * | 2013-09-11 | 2017-12-15 | 先进科技新加坡有限公司 | 利用激发的混合气体的晶粒安装装置和方法 |
| US10895539B2 (en) * | 2017-10-20 | 2021-01-19 | Lam Research Corporation | In-situ chamber clean end point detection systems and methods using computer vision systems |
| CN114743853A (zh) * | 2021-01-07 | 2022-07-12 | 中国科学院微电子研究所 | 一种半导体处理腔室、设备及半导体处理方法 |
| US12406837B2 (en) * | 2022-06-15 | 2025-09-02 | Applied Materials, Inc. | Reaction cell for species sensing |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE68909422T2 (de) * | 1988-01-11 | 1994-01-27 | Etec Systems Inc | Berührungsloses Reinigungsverfahren für Oberflächen mit Hilfe eines flachen Luftkissenlagers. |
| US5403434A (en) * | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
| JP3348804B2 (ja) | 1994-09-20 | 2002-11-20 | 株式会社日立製作所 | エッチング後処理方法 |
| JP3563462B2 (ja) | 1994-11-15 | 2004-09-08 | 松下エコシステムズ株式会社 | 活性空気による乾式洗浄方法とその装置、および除電方法 |
| JPH0917776A (ja) | 1995-06-27 | 1997-01-17 | Sony Corp | 半導体装置の製造方法及び半導体製造装置 |
| US5914278A (en) * | 1997-01-23 | 1999-06-22 | Gasonics International | Backside etch process chamber and method |
| JPH10256231A (ja) * | 1997-03-10 | 1998-09-25 | Sony Corp | ウエハ処理装置及びウエハ処理方法 |
| US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
-
2001
- 2001-01-16 JP JP2001007158A patent/JP4016598B2/ja not_active Expired - Fee Related
- 2001-05-30 KR KR1020010029896A patent/KR100856175B1/ko not_active Expired - Fee Related
- 2001-07-18 TW TW090117583A patent/TW525247B/zh not_active IP Right Cessation
- 2001-08-28 US US09/939,770 patent/US6713401B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100856175B1 (ko) | 2008-09-03 |
| US6713401B2 (en) | 2004-03-30 |
| US20020094691A1 (en) | 2002-07-18 |
| JP2002217169A (ja) | 2002-08-02 |
| KR20020061458A (ko) | 2002-07-24 |
| JP4016598B2 (ja) | 2007-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |