KR100856175B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR100856175B1
KR100856175B1 KR1020010029896A KR20010029896A KR100856175B1 KR 100856175 B1 KR100856175 B1 KR 100856175B1 KR 1020010029896 A KR1020010029896 A KR 1020010029896A KR 20010029896 A KR20010029896 A KR 20010029896A KR 100856175 B1 KR100856175 B1 KR 100856175B1
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South Korea
Prior art keywords
delete delete
substrate
pad
wafer
cleaning
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Expired - Fee Related
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KR1020010029896A
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English (en)
Korean (ko)
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KR20020061458A (ko
Inventor
요코가와켄에츠
모모노이요시노리
츠지모토카즈노리
타치신이치
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20020061458A publication Critical patent/KR20020061458A/ko
Application granted granted Critical
Publication of KR100856175B1 publication Critical patent/KR100856175B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020010029896A 2001-01-16 2001-05-30 반도체장치의 제조방법 Expired - Fee Related KR100856175B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-7158 2001-01-16
JP2001007158A JP4016598B2 (ja) 2001-01-16 2001-01-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20020061458A KR20020061458A (ko) 2002-07-24
KR100856175B1 true KR100856175B1 (ko) 2008-09-03

Family

ID=18874942

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010029896A Expired - Fee Related KR100856175B1 (ko) 2001-01-16 2001-05-30 반도체장치의 제조방법

Country Status (4)

Country Link
US (1) US6713401B2 (enExample)
JP (1) JP4016598B2 (enExample)
KR (1) KR100856175B1 (enExample)
TW (1) TW525247B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3997859B2 (ja) * 2002-07-25 2007-10-24 株式会社日立製作所 半導体装置の製造方法および製造装置
TWI230396B (en) * 2002-09-30 2005-04-01 Lam Res Corp System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
WO2004107426A1 (ja) * 2003-05-27 2004-12-09 Personal Creation Ltd. 磁石を備えた基板の処理装置及び処理方法
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
JP4933789B2 (ja) * 2006-02-13 2012-05-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
WO2007148470A1 (ja) * 2006-06-22 2007-12-27 River Bell Co. 処理装置、処理方法及びプラズマ源
KR100842745B1 (ko) * 2006-11-30 2008-07-01 주식회사 하이닉스반도체 스캔 인젝터를 가지는 플라즈마 공정 장비 및 공정 방법
JP2008153007A (ja) * 2006-12-15 2008-07-03 Nisshin:Kk プラズマ発生装置
CN101765905B (zh) 2007-05-15 2012-07-18 佳能安内华股份有限公司 半导体器件的制备方法
EP2036856B1 (en) * 2007-09-04 2018-09-12 Mitsubishi Materials Corporation Clean bench and method of producing raw material for single crystal silicon
JP5006938B2 (ja) 2007-11-02 2012-08-22 キヤノンアネルバ株式会社 表面処理装置およびその基板処理方法
JP5452894B2 (ja) * 2008-07-17 2014-03-26 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP5583503B2 (ja) * 2010-07-14 2014-09-03 東京エレクトロン株式会社 基板洗浄装置、およびこれを備える塗布現像装置
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
US10895539B2 (en) * 2017-10-20 2021-01-19 Lam Research Corporation In-situ chamber clean end point detection systems and methods using computer vision systems
CN114743853A (zh) * 2021-01-07 2022-07-12 中国科学院微电子研究所 一种半导体处理腔室、设备及半导体处理方法
US12406837B2 (en) * 2022-06-15 2025-09-02 Applied Materials, Inc. Reaction cell for species sensing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225125A (ja) * 1988-01-11 1989-09-08 Perkin Elmer Corp:The 表面から微粒子を掃除する方法
JPH10256231A (ja) * 1997-03-10 1998-09-25 Sony Corp ウエハ処理装置及びウエハ処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403434A (en) * 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3348804B2 (ja) 1994-09-20 2002-11-20 株式会社日立製作所 エッチング後処理方法
JP3563462B2 (ja) 1994-11-15 2004-09-08 松下エコシステムズ株式会社 活性空気による乾式洗浄方法とその装置、および除電方法
JPH0917776A (ja) 1995-06-27 1997-01-17 Sony Corp 半導体装置の製造方法及び半導体製造装置
US5914278A (en) * 1997-01-23 1999-06-22 Gasonics International Backside etch process chamber and method
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225125A (ja) * 1988-01-11 1989-09-08 Perkin Elmer Corp:The 表面から微粒子を掃除する方法
JPH10256231A (ja) * 1997-03-10 1998-09-25 Sony Corp ウエハ処理装置及びウエハ処理方法

Also Published As

Publication number Publication date
KR20020061458A (ko) 2002-07-24
JP4016598B2 (ja) 2007-12-05
JP2002217169A (ja) 2002-08-02
TW525247B (en) 2003-03-21
US20020094691A1 (en) 2002-07-18
US6713401B2 (en) 2004-03-30

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