JP4317759B2 - Coralフィルムにおいてエッチングおよび剥離工程後の残留物を除去するための方法 - Google Patents
Coralフィルムにおいてエッチングおよび剥離工程後の残留物を除去するための方法 Download PDFInfo
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- JP4317759B2 JP4317759B2 JP2003558912A JP2003558912A JP4317759B2 JP 4317759 B2 JP4317759 B2 JP 4317759B2 JP 2003558912 A JP2003558912 A JP 2003558912A JP 2003558912 A JP2003558912 A JP 2003558912A JP 4317759 B2 JP4317759 B2 JP 4317759B2
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- Prior art keywords
- cleaning
- low dielectric
- semiconductor wafer
- ashing
- dielectric constant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Description
14…反射防止膜層
16…低誘電率絶縁体層
17…形状
18…フォトレジスト層
20…エッチング操作
22…ポリマ形成
23…アッシング操作
27…残留物
27’…残留物冠
100…ウエハ洗浄ステーション
100b…水平ウエハスクラバ
100c…垂直ウエハスクラバ
102…洗浄制御ステーション
104…送りステーション
106…洗浄ステージ
106a…洗浄ステージ
106b…洗浄ステージ
108…回転リンス乾燥ステーション
110…受け取りステーション
120…ブラシ
120a…ブラシ
120b…ブラシ
130…ウエハ
200a…ブラシコア
200b…ブラシコア
201…軸
202…流体注入口
Claims (14)
- 半導体ウエハの洗浄方法であって、
フォトレジストマスクを有する低誘電率絶縁体層に形状をプラズマエッチングする工程であって、エッチング残留物が生成される工程と、
前記半導体ウエハをアッシングして前記フォトレジストマスクを除去する工程であって、アッシング残留物が生成される工程と、
前記エッチング残留物と前記アッシング残留物とを前記低誘電率絶縁体層から除去する工程であって、洗浄剤と湿潤剤とを含む流体混合物を供給する湿式ブラシで前記半導体ウエハの前記低誘電率絶縁体層をスクラブすることにより除去が強化される工程と、
を備え、
前記湿潤剤は、界面活性剤であり、
前記洗浄剤は、NH4OHと、H2O2と、脱イオン水との混合物を含み、
前記界面活性剤は、フッ素系界面活性剤および炭化水素系界面活性剤を含む群から選択され、
前記界面活性剤は、約0.005重量パーセントから約0.1重量パーセントの間の濃度を有する、洗浄方法。 - 請求項1に記載の半導体ウエハの洗浄方法であって、前記界面活性剤は、約0.01重量パーセントの濃度を有する、洗浄方法。
- 請求項1に記載の半導体ウエハの洗浄方法であって、NH4OHと、H2O2と、脱イオン水との前記混合物の比は、約1:4:10から約1:4:30の間である、洗浄方法。
- 請求項3に記載の半導体ウエハの洗浄方法であって、NH4OHと、H2O2と、脱イオン水との前記混合物の比は、約1:4:20である、洗浄方法。
- 請求項1に記載の半導体ウエハの洗浄方法であって、さらに、
前記エッチング残留物および前記アッシング残留物を除去する工程の後に、脱イオン水を供給しつつ前記ブラシを用いて前記低誘電率絶縁体層をスクラブする工程を備える、洗浄方法。 - 半導体ウエハの洗浄方法であって、
低誘電率絶縁体層に形状をプラズマエッチングする工程であって、前記形状内および周囲にエッチング残留物が生成される工程と、
前記半導体ウエハにアッシング操作を施す工程であって、前記アッシング操作が、アッシング残留物を生成する工程と、
洗浄剤と湿潤剤とを含む混合流体を用いて前記低誘電率絶縁体層をスクラブする工程であって、前記湿潤剤は、疎水性の前記低誘電率絶縁体層の表面に対する前記洗浄剤による前記エッチング残留物および前記アッシング残留物の洗浄を円滑にするように構成されている工程と、
を備え、
前記湿潤剤は、界面活性剤であり、
前記洗浄剤は、NH4OHと、H2O2と、脱イオン水との混合物を含み、
前記界面活性剤は、フッ素系界面活性剤および炭化水素系界面活性剤を含む群から選択され、
前記界面活性剤は、約0.005重量パーセントから約0.1重量パーセントの間の濃度を有する、洗浄方法。 - 請求項6に記載の半導体ウエハの洗浄方法であって、さらに、
前記エッチング残留物および前記アッシング残留物を除去した後に、脱イオン(DI)水を供給しつつブラシを用いて前記低誘電率絶縁体層をスクラブする工程を備える、洗浄方法。 - 請求項6に記載の半導体ウエハの洗浄方法であって、前記界面活性剤は、約0.01重量パーセントの濃度を有する、洗浄方法。
- 請求項6に記載の半導体ウエハの洗浄方法であって、NH4OHと、H2O2と、脱イオン水との前記混合物の比は、約1:4:10から約1:4:30の間である、洗浄方法。
- 請求項6に記載の半導体ウエハの洗浄方法であって、NH4OHと、H2O2と、脱イオン水との前記混合物の比は、約1:4:20である、洗浄方法。
- 半導体ウエハの洗浄方法であって、
低誘電率絶縁体層に形状をプラズマエッチングする工程であって、前記形状内および周囲にエッチング残留物を生成する工程と、
前記半導体ウエハにアッシング操作を施す工程であって、前記アッシング操作が、アッシング残留物を生成する工程と、
洗浄剤と湿潤剤とを含む混合流体を用いて前記低誘電率絶縁体層をスクラブする工程であって、前記湿潤剤は、疎水性の前記低誘電率絶縁体層の表面に対する前記洗浄剤による前記エッチング残留物および前記アッシング残留物の洗浄を円滑にするように構成されている工程と、
前記エッチング残留物および前記アッシング残留物を除去した後に、脱イオン水を供給しつつブラシを用いて前記低誘電率絶縁体層をスクラブする工程と、
を備え、
前記湿潤剤は、界面活性剤であり、
前記洗浄剤は、NH4OHと、H2O2と、脱イオン(DI)水との混合物を含み、
前記界面活性剤は、フッ素系界面活性剤および炭化水素系界面活性剤を含む群から選択され、
前記界面活性剤は、約0.005重量パーセントから約0.1重量パーセントの間の濃度を有する、洗浄方法。 - 請求項11に記載の半導体ウエハの洗浄方法であって、前記界面活性剤は、約0.01重量パーセントの濃度を有する、洗浄方法。
- 請求項11に記載の半導体ウエハの洗浄方法であって、NH4OHと、H2O2と、脱イオン水との前記混合物の比は、約1:4:10から約1:4:30の間である、洗浄方法。
- 請求項11に記載の半導体ウエハの洗浄方法であって、NH4OHと、H2O2と、脱イオン水との前記混合物の比は、約1:4:20である、洗浄方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/033,644 US6949411B1 (en) | 2001-12-27 | 2001-12-27 | Method for post-etch and strip residue removal on coral films |
PCT/US2002/040987 WO2003058694A1 (en) | 2001-12-27 | 2002-12-20 | Method for post-etch and strip residue removal on coral films |
Publications (2)
Publication Number | Publication Date |
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JP2006502559A JP2006502559A (ja) | 2006-01-19 |
JP4317759B2 true JP4317759B2 (ja) | 2009-08-19 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2003558912A Expired - Fee Related JP4317759B2 (ja) | 2001-12-27 | 2002-12-20 | Coralフィルムにおいてエッチングおよび剥離工程後の残留物を除去するための方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6949411B1 (ja) |
EP (1) | EP1459363B1 (ja) |
JP (1) | JP4317759B2 (ja) |
KR (1) | KR100977104B1 (ja) |
CN (1) | CN100392814C (ja) |
AU (1) | AU2002361829A1 (ja) |
DE (1) | DE60237310D1 (ja) |
TW (1) | TWI310403B (ja) |
WO (1) | WO2003058694A1 (ja) |
Families Citing this family (10)
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US7067016B1 (en) * | 2003-03-31 | 2006-06-27 | Lam Research Corporation | Chemically assisted mechanical cleaning of MRAM structures |
US6936540B2 (en) * | 2003-09-18 | 2005-08-30 | Micron Technology, Inc. | Method of polishing a semiconductor substrate, post-CMP cleaning process, and method of cleaning residue from registration alignment markings |
KR100720481B1 (ko) * | 2005-11-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
JP2008060238A (ja) * | 2006-08-30 | 2008-03-13 | Toshiba Corp | 半導体装置の製造方法 |
WO2008094457A1 (en) * | 2007-01-30 | 2008-08-07 | Lam Research Corporation | Composition and methods for forming metal films on semiconductor substrates using supercritical solvents |
US8617301B2 (en) * | 2007-01-30 | 2013-12-31 | Lam Research Corporation | Compositions and methods for forming and depositing metal films on semiconductor substrates using supercritical solvents |
CN103050374B (zh) | 2011-10-17 | 2015-11-25 | 中芯国际集成电路制造(北京)有限公司 | 蚀刻后的处理方法 |
CN108054083A (zh) * | 2017-12-13 | 2018-05-18 | 武汉新芯集成电路制造有限公司 | 一种对晶圆表面颗粒物进行去除的方法 |
CN111755319A (zh) * | 2019-03-29 | 2020-10-09 | 中芯集成电路(宁波)有限公司 | 晶圆清洗方法及光刻胶图案化方法 |
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JP3217116B2 (ja) * | 1992-03-06 | 2001-10-09 | 日産化学工業株式会社 | 低表面張力洗浄用組成物 |
JPH07115078A (ja) * | 1993-10-19 | 1995-05-02 | Shimada Phys & Chem Ind Co Ltd | 基板の処理方法およびその装置 |
JP3326642B2 (ja) | 1993-11-09 | 2002-09-24 | ソニー株式会社 | 基板の研磨後処理方法およびこれに用いる研磨装置 |
US5413952A (en) * | 1994-02-02 | 1995-05-09 | Motorola, Inc. | Direct wafer bonded structure method of making |
EP1046433B1 (en) | 1995-10-13 | 2004-01-02 | Lam Research Corporation | Method for removing contaminants by brushing |
US5575706A (en) | 1996-01-11 | 1996-11-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) apparatus and polish method |
US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
US6218290B1 (en) * | 1998-11-25 | 2001-04-17 | Advanced Micro Devices, Inc. | Copper dendrite prevention by chemical removal of dielectric |
US6130167A (en) * | 1999-03-18 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Method of preventing corrosion of a metal structure exposed in a non-fully landed via |
JP4094174B2 (ja) * | 1999-06-04 | 2008-06-04 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6274478B1 (en) * | 1999-07-13 | 2001-08-14 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
JP4554011B2 (ja) * | 1999-08-10 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US6623579B1 (en) * | 1999-11-02 | 2003-09-23 | Alien Technology Corporation | Methods and apparatus for fluidic self assembly |
US6187684B1 (en) | 1999-12-09 | 2001-02-13 | Lam Research Corporation | Methods for cleaning substrate surfaces after etch operations |
US6315637B1 (en) * | 2000-01-18 | 2001-11-13 | Advanced Micro Devices, Inc. | Photoresist removal using a polishing tool |
US6482678B1 (en) * | 2000-03-31 | 2002-11-19 | Lam Research Corporation | Wafer preparation systems and methods for preparing wafers |
JP4057762B2 (ja) * | 2000-04-25 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
KR100404560B1 (ko) * | 2001-01-06 | 2003-11-05 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US20020105057A1 (en) * | 2001-02-02 | 2002-08-08 | Vyvoda Michael A. | Wafer surface that facilitates particle removal |
-
2001
- 2001-12-27 US US10/033,644 patent/US6949411B1/en not_active Expired - Fee Related
-
2002
- 2002-12-18 TW TW091136604A patent/TWI310403B/zh not_active IP Right Cessation
- 2002-12-20 JP JP2003558912A patent/JP4317759B2/ja not_active Expired - Fee Related
- 2002-12-20 KR KR1020047010160A patent/KR100977104B1/ko not_active IP Right Cessation
- 2002-12-20 EP EP02797461A patent/EP1459363B1/en not_active Expired - Lifetime
- 2002-12-20 WO PCT/US2002/040987 patent/WO2003058694A1/en active Application Filing
- 2002-12-20 CN CNB028262689A patent/CN100392814C/zh not_active Expired - Fee Related
- 2002-12-20 DE DE60237310T patent/DE60237310D1/de not_active Expired - Lifetime
- 2002-12-20 AU AU2002361829A patent/AU2002361829A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20040065312A (ko) | 2004-07-21 |
EP1459363A1 (en) | 2004-09-22 |
KR100977104B1 (ko) | 2010-08-23 |
US6949411B1 (en) | 2005-09-27 |
CN100392814C (zh) | 2008-06-04 |
CN1608311A (zh) | 2005-04-20 |
EP1459363A4 (en) | 2007-08-01 |
TW200302271A (en) | 2003-08-01 |
DE60237310D1 (de) | 2010-09-23 |
TWI310403B (en) | 2009-06-01 |
WO2003058694A1 (en) | 2003-07-17 |
JP2006502559A (ja) | 2006-01-19 |
EP1459363B1 (en) | 2010-08-11 |
AU2002361829A1 (en) | 2003-07-24 |
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