JP4015352B2 - 荷電粒子ビームを用いた検査方法 - Google Patents

荷電粒子ビームを用いた検査方法 Download PDF

Info

Publication number
JP4015352B2
JP4015352B2 JP2000276640A JP2000276640A JP4015352B2 JP 4015352 B2 JP4015352 B2 JP 4015352B2 JP 2000276640 A JP2000276640 A JP 2000276640A JP 2000276640 A JP2000276640 A JP 2000276640A JP 4015352 B2 JP4015352 B2 JP 4015352B2
Authority
JP
Japan
Prior art keywords
image
inspection
electron beam
resistance
inspection method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000276640A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001313322A5 (enExample
JP2001313322A (ja
Inventor
英利 西山
真理 野副
博之 品田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000276640A priority Critical patent/JP4015352B2/ja
Priority to US09/785,275 priority patent/US6618850B2/en
Publication of JP2001313322A publication Critical patent/JP2001313322A/ja
Priority to US10/419,141 priority patent/US6931620B2/en
Priority to US11/165,250 priority patent/US7526747B2/en
Publication of JP2001313322A5 publication Critical patent/JP2001313322A5/ja
Application granted granted Critical
Publication of JP4015352B2 publication Critical patent/JP4015352B2/ja
Priority to US12/420,273 priority patent/US20090189075A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy
    • H01J37/268—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measuring Leads Or Probes (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2000276640A 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法 Expired - Fee Related JP4015352B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000276640A JP4015352B2 (ja) 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法
US09/785,275 US6618850B2 (en) 2000-02-22 2001-02-20 Inspection method and inspection system using charged particle beam
US10/419,141 US6931620B2 (en) 2000-02-22 2003-04-21 Inspection method and inspection system using charged particle beam
US11/165,250 US7526747B2 (en) 2000-02-22 2005-06-24 Inspection method and inspection system using charged particle beam
US12/420,273 US20090189075A1 (en) 2000-02-22 2009-04-08 Inspection method and inspection system using charged particle beam

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-50501 2000-02-22
JP2000050501 2000-02-22
JP2000276640A JP4015352B2 (ja) 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005176062A Division JP4625375B2 (ja) 2000-02-22 2005-06-16 検査装置
JP2005176063A Division JP4625376B2 (ja) 2000-02-22 2005-06-16 電子ビームによる検査方法

Publications (3)

Publication Number Publication Date
JP2001313322A JP2001313322A (ja) 2001-11-09
JP2001313322A5 JP2001313322A5 (enExample) 2005-10-20
JP4015352B2 true JP4015352B2 (ja) 2007-11-28

Family

ID=26586172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000276640A Expired - Fee Related JP4015352B2 (ja) 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法

Country Status (2)

Country Link
US (4) US6618850B2 (enExample)
JP (1) JP4015352B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210012894A (ko) * 2019-07-25 2021-02-03 주식회사 히타치하이테크 전기 특성을 도출하는 시스템 및 비일시적 컴퓨터 가독 매체

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100327337B1 (ko) * 1999-08-17 2002-03-06 윤종용 반도체 장치 제조에서 사용되는 플라즈마에 의해서 유기되는전하 대전 정도를 판별하는 방법 및 이에 이용되는 판별장치
JP4015352B2 (ja) * 2000-02-22 2007-11-28 株式会社日立製作所 荷電粒子ビームを用いた検査方法
US7766921B2 (en) * 2000-06-29 2010-08-03 Concentric Medical, Inc. Systems, methods and devices for removing obstructions from a blood vessel
JP4150493B2 (ja) * 2000-08-22 2008-09-17 株式会社東芝 パターン描画装置における温度測定方法
JP3661604B2 (ja) * 2001-04-05 2005-06-15 松下電器産業株式会社 顕微観察装置および顕微観察方法
US6943569B1 (en) * 2002-04-12 2005-09-13 Advanced Micro Devices, Inc. Method, system and apparatus to detect defects in semiconductor devices
US7081625B2 (en) * 2002-11-06 2006-07-25 Hitachi High-Technologies Corporation Charged particle beam apparatus
DE10253717B4 (de) * 2002-11-18 2011-05-19 Applied Materials Gmbh Vorrichtung zum Kontaktieren für den Test mindestens eines Testobjekts, Testsystem und Verfahren zum Testen von Testobjekten
JP3961427B2 (ja) 2003-01-14 2007-08-22 株式会社東芝 配線パターンの埋め込み検査方法、半導体装置の製造方法および検査装置
US7739064B1 (en) * 2003-05-09 2010-06-15 Kla-Tencor Corporation Inline clustered defect reduction
JP4608272B2 (ja) * 2004-09-17 2011-01-12 株式会社リコー 耐絶縁性測定方法および装置および潜像担持体評価方法
KR100562701B1 (ko) * 2004-01-07 2006-03-23 삼성전자주식회사 전자 소스 및 이를 이용한 구멍의 오픈 불량 검사 장치와방법
JP4528014B2 (ja) 2004-04-05 2010-08-18 株式会社日立ハイテクノロジーズ 試料検査方法
US7256606B2 (en) * 2004-08-03 2007-08-14 Applied Materials, Inc. Method for testing pixels for LCD TFT displays
JP4943733B2 (ja) * 2005-04-28 2012-05-30 株式会社日立ハイテクノロジーズ 荷電粒子ビームを用いた検査方法及び検査装置
US8577171B1 (en) * 2006-07-31 2013-11-05 Gatan, Inc. Method for normalizing multi-gain images
JP4920385B2 (ja) * 2006-11-29 2012-04-18 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置、走査型電子顕微鏡、及び試料観察方法
JP5171101B2 (ja) * 2007-05-01 2013-03-27 株式会社日立ハイテクノロジーズ 電子線照射条件決定支援ユニット、および電子線式試料検査装置
JP4769320B2 (ja) * 2009-09-25 2011-09-07 ルネサスエレクトロニクス株式会社 半導体装置の不良解析方法及び装置並びにそれらのプログラム
JP5624774B2 (ja) * 2010-02-26 2014-11-12 株式会社日立ハイテクノロジーズ 走査電子顕微鏡の光学条件設定方法、及び走査電子顕微鏡
US8951266B2 (en) * 2011-01-07 2015-02-10 Restoration Robotics, Inc. Methods and systems for modifying a parameter of an automated procedure
US20130088585A1 (en) * 2011-10-07 2013-04-11 Texas Instruments Incorporated Surface imaging with materials identified by color
US8723115B2 (en) * 2012-03-27 2014-05-13 Kla-Tencor Corporation Method and apparatus for detecting buried defects
US20150028204A1 (en) * 2013-07-25 2015-01-29 Kabushiki Kaisha Toshiba Inspection apparatus and inspection method
CN103489809B (zh) * 2013-09-22 2016-08-10 上海华力微电子有限公司 晶圆表面颗粒物的缺陷检测系统及其工作方法
US9449788B2 (en) 2013-09-28 2016-09-20 Kla-Tencor Corporation Enhanced defect detection in electron beam inspection and review
JP6379018B2 (ja) * 2014-11-20 2018-08-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置および検査方法
US9958501B1 (en) 2015-03-04 2018-05-01 Applieed Materials Israel Ltd. System for electrical measurements of objects in a vacuumed environment
KR102592921B1 (ko) * 2015-12-31 2023-10-23 삼성전자주식회사 패턴 결함 검사 방법
JP6937254B2 (ja) * 2018-02-08 2021-09-22 株式会社日立ハイテク 検査システム、画像処理装置、および検査方法
US10866197B2 (en) * 2018-09-20 2020-12-15 KLA Corp. Dispositioning defects detected on extreme ultraviolet photomasks
US11914307B2 (en) 2019-02-26 2024-02-27 Asml Netherlands B.V. Inspection apparatus lithographic apparatus measurement method
JP7173937B2 (ja) * 2019-08-08 2022-11-16 株式会社日立ハイテク 荷電粒子線装置
FR3112393B1 (fr) * 2020-07-10 2022-07-08 Centre Nat Rech Scient Dispositif de détermination de la résistance électrique d’un système et procédé associé
KR102686145B1 (ko) * 2020-09-30 2024-07-19 주식회사 히타치하이테크 검사 방법
JP7458292B2 (ja) * 2020-10-20 2024-03-29 東京エレクトロン株式会社 プラズマ処理装置
JP7507838B2 (ja) 2021-11-30 2024-06-28 イノヴェータム・インストゥルメンツ・インコーポレイテッド 荷電粒子ビームを使用するプローブ先端のｘ－ｙロケーションの識別
US12306241B2 (en) 2022-02-14 2025-05-20 Innovatum Instruments Inc. Automated probe landing
CN119339775B (zh) * 2024-09-06 2025-11-21 华中科技大学 一种存储器件电学性能缺陷的原位测量方法及系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036734A1 (de) * 1980-09-29 1982-05-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur messung von widerstaenden und kapazitaeten von elektronischen bauelementen
US4629898A (en) * 1981-10-02 1986-12-16 Oregon Graduate Center Electron and ion beam apparatus and passivation milling
JPS59155941A (ja) 1983-02-25 1984-09-05 Hitachi Ltd 電子ビーム検査方法および装置
JP3148353B2 (ja) 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
US5404110A (en) 1993-03-25 1995-04-04 International Business Machines Corporation System using induced current for contactless testing of wiring networks
GB2282895B (en) * 1993-09-21 1998-04-08 Advantest Corp IC analysis system having charged particle beam apparatus
US5523694A (en) * 1994-04-08 1996-06-04 Cole, Jr.; Edward I. Integrated circuit failure analysis by low-energy charge-induced voltage alteration
US5430305A (en) * 1994-04-08 1995-07-04 The United States Of America As Represented By The United States Department Of Energy Light-induced voltage alteration for integrated circuit analysis
JPH07288096A (ja) 1994-04-20 1995-10-31 Jeol Ltd 試料の帯電検出方法および走査電子顕微鏡
JPH08160109A (ja) 1994-12-02 1996-06-21 Hitachi Ltd 電子素子評価装置
US5781017A (en) * 1996-04-26 1998-07-14 Sandia Corporation Capacitive charge generation apparatus and method for testing circuits
JP3045111B2 (ja) * 1997-07-14 2000-05-29 日本電気株式会社 Ｌｓｉ不良自動解析装置及びその解析方法並びにその方法をコンピュータに実行させるためのプログラムを記憶した記憶媒体
US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
JP3356056B2 (ja) * 1998-05-15 2002-12-09 日本電気株式会社 配線不良検出回路、配線不良検出用半導体ウェハ及びこれらを用いた配線不良検出方法
US6566885B1 (en) * 1999-12-14 2003-05-20 Kla-Tencor Multiple directional scans of test structures on semiconductor integrated circuits
US6445199B1 (en) * 1999-12-14 2002-09-03 Kla-Tencor Corporation Methods and apparatus for generating spatially resolved voltage contrast maps of semiconductor test structures
JP4015352B2 (ja) * 2000-02-22 2007-11-28 株式会社日立製作所 荷電粒子ビームを用いた検査方法
US6515282B1 (en) * 2000-03-28 2003-02-04 Applied Materials, Inc. Testing of interconnection circuitry using two modulated charged particle beams
US6627884B2 (en) * 2001-03-19 2003-09-30 Kla-Tencor Technologies Corporation Simultaneous flooding and inspection for charge control in an electron beam inspection machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210012894A (ko) * 2019-07-25 2021-02-03 주식회사 히타치하이테크 전기 특성을 도출하는 시스템 및 비일시적 컴퓨터 가독 매체
KR102426904B1 (ko) 2019-07-25 2022-07-28 주식회사 히타치하이테크 전기 특성을 도출하는 시스템 및 비일시적 컴퓨터 가독 매체
US11776103B2 (en) 2019-07-25 2023-10-03 Hitachi High-Tech Corporation System for deriving electrical characteristics and non-transitory computer-readable medium
US12450715B2 (en) 2019-07-25 2025-10-21 Hitachi High-Tech Corporation System for deriving electrical characteristics and non-transitory computer-readable medium

Also Published As

Publication number Publication date
US6618850B2 (en) 2003-09-09
US20050236648A1 (en) 2005-10-27
US7526747B2 (en) 2009-04-28
US20030204826A1 (en) 2003-10-30
US6931620B2 (en) 2005-08-16
US20010016938A1 (en) 2001-08-23
JP2001313322A (ja) 2001-11-09
US20090189075A1 (en) 2009-07-30

Similar Documents

Publication Publication Date Title
JP4015352B2 (ja) 荷電粒子ビームを用いた検査方法
JP3955450B2 (ja) 試料検査方法
US7521679B2 (en) Inspection method and inspection system using charged particle beam
JP4248382B2 (ja) 荷電粒子ビームによる検査方法および検査装置
JP3973372B2 (ja) 荷電粒子線を用いた基板検査装置および基板検査方法
US6703850B2 (en) Method of inspecting circuit pattern and inspecting instrument
JP3791095B2 (ja) 回路パターンの検査方法及び検査装置
JP3823073B2 (ja) 電子線を用いた検査方法及び検査装置
JP4006119B2 (ja) 回路パターン検査装置、および回路パターン検査方法
JP2004340650A (ja) 回路パターンの検査装置
JP4041630B2 (ja) 回路パターンの検査装置および検査方法
JP2002118158A (ja) 回路パターンの検査方法及び検査装置
JP4625375B2 (ja) 検査装置
JP4625376B2 (ja) 電子ビームによる検査方法
JP5016799B2 (ja) 荷電粒子ビームを用いた検査装置
JP4274247B2 (ja) 回路パターンの検査方法及び検査装置
JP2000164661A (ja) 回路パターンの検査装置
JP2004048002A (ja) 回路パターンの検査装置および検査方法
JP2004157135A (ja) 回路パターンの検査方法及び検査装置
JP4090173B2 (ja) 回路パターン検査装置
JP2003100248A (ja) 荷電粒子線を用いたパターン検査装置
JP2000164657A (ja) 回路パターンの検査装置及び検査方法
JP2008166635A (ja) 回路パターンの検査装置、および、回路パターンの検査方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050616

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050616

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050616

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051031

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070605

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070611

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070821

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070913

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100921

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100921

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110921

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120921

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120921

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130921

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees