JP2001313322A5 - - Google Patents

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Publication number
JP2001313322A5
JP2001313322A5 JP2000276640A JP2000276640A JP2001313322A5 JP 2001313322 A5 JP2001313322 A5 JP 2001313322A5 JP 2000276640 A JP2000276640 A JP 2000276640A JP 2000276640 A JP2000276640 A JP 2000276640A JP 2001313322 A5 JP2001313322 A5 JP 2001313322A5
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JP
Japan
Prior art keywords
region
charged particle
inspection method
particle beam
resistance value
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Application number
JP2000276640A
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English (en)
Japanese (ja)
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JP2001313322A (ja
JP4015352B2 (ja
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Priority claimed from JP2000276640A external-priority patent/JP4015352B2/ja
Priority to JP2000276640A priority Critical patent/JP4015352B2/ja
Application filed filed Critical
Priority to US09/785,275 priority patent/US6618850B2/en
Publication of JP2001313322A publication Critical patent/JP2001313322A/ja
Priority to US10/419,141 priority patent/US6931620B2/en
Priority to US11/165,250 priority patent/US7526747B2/en
Publication of JP2001313322A5 publication Critical patent/JP2001313322A5/ja
Publication of JP4015352B2 publication Critical patent/JP4015352B2/ja
Application granted granted Critical
Priority to US12/420,273 priority patent/US20090189075A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000276640A 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法 Expired - Fee Related JP4015352B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000276640A JP4015352B2 (ja) 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法
US09/785,275 US6618850B2 (en) 2000-02-22 2001-02-20 Inspection method and inspection system using charged particle beam
US10/419,141 US6931620B2 (en) 2000-02-22 2003-04-21 Inspection method and inspection system using charged particle beam
US11/165,250 US7526747B2 (en) 2000-02-22 2005-06-24 Inspection method and inspection system using charged particle beam
US12/420,273 US20090189075A1 (en) 2000-02-22 2009-04-08 Inspection method and inspection system using charged particle beam

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-50501 2000-02-22
JP2000050501 2000-02-22
JP2000276640A JP4015352B2 (ja) 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005176063A Division JP4625376B2 (ja) 2000-02-22 2005-06-16 電子ビームによる検査方法
JP2005176062A Division JP4625375B2 (ja) 2000-02-22 2005-06-16 検査装置

Publications (3)

Publication Number Publication Date
JP2001313322A JP2001313322A (ja) 2001-11-09
JP2001313322A5 true JP2001313322A5 (enExample) 2005-10-20
JP4015352B2 JP4015352B2 (ja) 2007-11-28

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JP2000276640A Expired - Fee Related JP4015352B2 (ja) 2000-02-22 2000-09-07 荷電粒子ビームを用いた検査方法

Country Status (2)

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US (4) US6618850B2 (enExample)
JP (1) JP4015352B2 (enExample)

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US7256606B2 (en) * 2004-08-03 2007-08-14 Applied Materials, Inc. Method for testing pixels for LCD TFT displays
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US8577171B1 (en) * 2006-07-31 2013-11-05 Gatan, Inc. Method for normalizing multi-gain images
JP4920385B2 (ja) * 2006-11-29 2012-04-18 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置、走査型電子顕微鏡、及び試料観察方法
JP5171101B2 (ja) * 2007-05-01 2013-03-27 株式会社日立ハイテクノロジーズ 電子線照射条件決定支援ユニット、および電子線式試料検査装置
JP4769320B2 (ja) * 2009-09-25 2011-09-07 ルネサスエレクトロニクス株式会社 半導体装置の不良解析方法及び装置並びにそれらのプログラム
JP5624774B2 (ja) * 2010-02-26 2014-11-12 株式会社日立ハイテクノロジーズ 走査電子顕微鏡の光学条件設定方法、及び走査電子顕微鏡
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CN103489809B (zh) * 2013-09-22 2016-08-10 上海华力微电子有限公司 晶圆表面颗粒物的缺陷检测系统及其工作方法
US9449788B2 (en) 2013-09-28 2016-09-20 Kla-Tencor Corporation Enhanced defect detection in electron beam inspection and review
JP6379018B2 (ja) * 2014-11-20 2018-08-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置および検査方法
US9958501B1 (en) 2015-03-04 2018-05-01 Applieed Materials Israel Ltd. System for electrical measurements of objects in a vacuumed environment
KR102592921B1 (ko) * 2015-12-31 2023-10-23 삼성전자주식회사 패턴 결함 검사 방법
JP6937254B2 (ja) * 2018-02-08 2021-09-22 株式会社日立ハイテク 検査システム、画像処理装置、および検査方法
US10866197B2 (en) * 2018-09-20 2020-12-15 KLA Corp. Dispositioning defects detected on extreme ultraviolet photomasks
US11914307B2 (en) 2019-02-26 2024-02-27 Asml Netherlands B.V. Inspection apparatus lithographic apparatus measurement method
JP7271358B2 (ja) * 2019-07-25 2023-05-11 株式会社日立ハイテク 電気特性を導出するシステム及び非一時的コンピューター可読媒体
JP7173937B2 (ja) * 2019-08-08 2022-11-16 株式会社日立ハイテク 荷電粒子線装置
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KR102686145B1 (ko) * 2020-09-30 2024-07-19 주식회사 히타치하이테크 검사 방법
JP7458292B2 (ja) * 2020-10-20 2024-03-29 東京エレクトロン株式会社 プラズマ処理装置
JP7507838B2 (ja) 2021-11-30 2024-06-28 イノヴェータム・インストゥルメンツ・インコーポレイテッド 荷電粒子ビームを使用するプローブ先端のｘ－ｙロケーションの識別
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CN119339775B (zh) * 2024-09-06 2025-11-21 华中科技大学 一种存储器件电学性能缺陷的原位测量方法及系统

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