JP4011828B2 - Ｉｉｉ族窒化物結晶の結晶成長方法及びｉｉｉ族窒化物結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物結晶の結晶成長方法及びｉｉｉ族窒化物結晶の製造方法 Download PDF

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JP4011828B2
JP4011828B2 JP2000175577A JP2000175577A JP4011828B2 JP 4011828 B2 JP4011828 B2 JP 4011828B2 JP 2000175577 A JP2000175577 A JP 2000175577A JP 2000175577 A JP2000175577 A JP 2000175577A JP 4011828 B2 JP4011828 B2 JP 4011828B2
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reaction vessel
group
iii
crystal
nitride crystal
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JP2001058900A5 (enExample
JP2001058900A (ja
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正二 皿山
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Ricoh Co Ltd
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Ricoh Co Ltd
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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2000175577A 1999-06-09 2000-06-07 Ｉｉｉ族窒化物結晶の結晶成長方法及びｉｉｉ族窒化物結晶の製造方法 Expired - Lifetime JP4011828B2 (ja)

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JP2000175577A JP4011828B2 (ja) 1999-06-09 2000-06-07 Ｉｉｉ族窒化物結晶の結晶成長方法及びｉｉｉ族窒化物結晶の製造方法

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JP11-162411 1999-06-09
JP16241199 1999-06-09
JP2000175577A JP4011828B2 (ja) 1999-06-09 2000-06-07 Ｉｉｉ族窒化物結晶の結晶成長方法及びｉｉｉ族窒化物結晶の製造方法

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JP2007208069A Division JP4675942B2 (ja) 1999-06-09 2007-08-09 結晶製造装置

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Families Citing this family (35)

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Publication number Priority date Publication date Assignee Title
JP5348123B2 (ja) * 1999-06-09 2013-11-20 株式会社リコー 結晶製造装置
US6592663B1 (en) 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP4551026B2 (ja) * 2001-05-17 2010-09-22 株式会社リコー Ｉｉｉ族窒化物結晶成長装置およびｉｉｉ族窒化物結晶成長方法
US7001457B2 (en) 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7125453B2 (en) 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
JP4513264B2 (ja) * 2002-02-22 2010-07-28 三菱化学株式会社 窒化物単結晶の製造方法
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP4534631B2 (ja) 2003-10-31 2010-09-01 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP2005194146A (ja) * 2004-01-08 2005-07-21 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法
JP4790607B2 (ja) * 2004-04-27 2011-10-12 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶製造装置およびｉｉｉ族元素窒化物結晶製造方法
JP4259414B2 (ja) 2004-07-27 2009-04-30 住友電気工業株式会社 Ｉｉｉ族窒化物単結晶の製造方法
JP4554448B2 (ja) * 2004-07-29 2010-09-29 株式会社リコー Ｉｉｉ族窒化物結晶製造方法及びｉｉｉ族窒化物結晶製造装置
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
TW200706710A (en) 2005-05-12 2007-02-16 Ricoh Co Ltd Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal
JP4192220B2 (ja) 2005-08-10 2008-12-10 株式会社リコー 結晶成長装置および製造方法
JP4732145B2 (ja) * 2005-11-21 2011-07-27 株式会社リコー 製造方法
JP4869687B2 (ja) * 2005-11-21 2012-02-08 株式会社リコー 結晶成長装置
EP1775356A3 (en) 2005-10-14 2009-12-16 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
DE102006035377B4 (de) 2005-11-02 2010-09-16 Toyoda Gosei Co., Ltd. Verfahren zur Herstellung eines Halbleiterkristalls
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
TW200741044A (en) 2006-03-16 2007-11-01 Toyoda Gosei Kk Semiconductor substrate, electronic device, optical device, and production methods therefor
JP2007277059A (ja) 2006-04-07 2007-10-25 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造装置
JP2007277055A (ja) 2006-04-07 2007-10-25 Toyoda Gosei Co Ltd 半導体結晶の製造方法および半導体基板
JP4936310B2 (ja) * 2006-04-07 2012-05-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造装置
US7708833B2 (en) 2007-03-13 2010-05-04 Toyoda Gosei Co., Ltd. Crystal growing apparatus
JP4830976B2 (ja) 2007-05-30 2011-12-07 豊田合成株式会社 Ｉｉｉ族窒化物半導体製造装置
DE102009003296B4 (de) 2008-05-22 2012-11-29 Ngk Insulators, Ltd. Herstellungsverfahren für einen N-leitenden Galliumnitrid-basierten Verbindungshalbleiter
JP2010105903A (ja) * 2008-08-21 2010-05-13 Mitsubishi Chemicals Corp 第１３族金属窒化物結晶の製造方法および半導体デバイスの製造方法
JP5147092B2 (ja) 2009-03-30 2013-02-20 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
JP5582028B2 (ja) * 2010-12-28 2014-09-03 株式会社Ｉｈｉ 結晶成長装置

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