JP4002909B2 - Cpp型巨大磁気抵抗効果ヘッド - Google Patents
Cpp型巨大磁気抵抗効果ヘッド Download PDFInfo
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- JP4002909B2 JP4002909B2 JP2004167391A JP2004167391A JP4002909B2 JP 4002909 B2 JP4002909 B2 JP 4002909B2 JP 2004167391 A JP2004167391 A JP 2004167391A JP 2004167391 A JP2004167391 A JP 2004167391A JP 4002909 B2 JP4002909 B2 JP 4002909B2
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- Japan
- Prior art keywords
- layer
- magnetic layer
- track width
- pinned magnetic
- giant magnetoresistive
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Description
10 下部シールド層
10a 凹部
20 下部大面積非磁性金属膜
30 GMR素子(巨大磁気抵抗効果素子)
31 固定磁性層
32 非磁性材料層
33 フリー磁性層
40 上部大面積非磁性金属膜
50 上部シールド層
61 第1絶縁層
62 バイアス下地層
63 縦バイアス層
64 第2絶縁層
65 バックフィルギャップ層
71 上部非磁性材料層
72 上部固定磁性層
80 反強磁性層
A 素子部
B 素子ハイト奥部
α 傾斜部
θ 傾斜角
Claims (6)
- 下部シールド層と上部シールド層の間に、非磁性材料層を挟んで積層した固定磁性層とフリー磁性層を有する巨大磁気抵抗効果素子を備え、この巨大磁気抵抗効果素子の膜面に直交する方向に電流が流れるCPP型巨大磁気抵抗効果ヘッドにおいて、
前記固定磁性層は、トラック幅方向よりもハイト方向に長く形成されており、前記非磁性材料層及び前記フリー磁性層の下に位置する素子部と;前記非磁性材料層及び前記フリー磁性層のハイト方向端面位置から該ハイト方向端面位置よりハイト方向奥側に位置する素子ハイト奥部と;を同一平面上に有し、トラック幅方向の寸法が前記素子部よりも前記素子ハイト奥部で大きいこと、
前記固定磁性層の素子部のトラック幅方向の寸法が0.2μm以下であること、
前記固定磁性層の素子ハイト奥部のみに、該固定磁性層の磁化方向を固定する反強磁性層を設けたこと、及び、
この反強磁性層は、前記下部シールド層に形成した凹部内に埋設されて前記固定磁性層の素子ハイト奥部の下面にのみ接しており、トラック幅方向の寸法が前記固定磁性層より小さいこと、
を特徴とするCPP型巨大磁気抵抗効果ヘッド。 - 請求項1記載のCPP型巨大磁気抵抗効果ヘッドにおいて、前記素子ハイト奥部に、前記素子部から該素子ハイト奥部に向かってトラック幅方向の寸法を広げる傾斜部を備えたCPP型巨大磁気抵抗効果ヘッド。
- 請求項2記載のCPP型巨大磁気抵抗効果ヘッドにおいて、前記傾斜部は、前記素子部のトラック幅方向の側面に対して5°ないし45°の傾斜角を有しているCPP型巨大磁気抵抗効果ヘッド。
- 請求項1ないし3のいずれか一項に記載のCPP型巨大磁気抵抗効果ヘッドにおいて、前記巨大磁気抵抗効果素子のトラック幅方向の両側に接して前記フリー磁性層に縦バイアス磁界を与える一対の縦バイアス層を備え、この一対の縦バイアス層のトラック幅方向における寸法が素子部よりも素子ハイト奥部で小さいCPP型巨大磁気抵抗効果ヘッド。
- 請求項4記載のCPP型巨大磁気抵抗効果ヘッドにおいて、前記一対の縦バイアス層は、トラック幅方向において制御可能な最小寸法で素子ハイト奥部が形成されているCPP型巨大磁気抵抗効果ヘッド。
- 請求項1ないし5のいずれか一項に記載のCPP型巨大磁気抵抗効果ヘッドにおいて、前記固定磁性層は、磁歪定数が正の値をとる磁性材料により形成され、記録媒体との対向面側の端面が開放されているCPP型巨大磁気抵抗効果ヘッド。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004167391A JP4002909B2 (ja) | 2004-06-04 | 2004-06-04 | Cpp型巨大磁気抵抗効果ヘッド |
US11/141,543 US7365949B2 (en) | 2004-06-04 | 2005-05-31 | CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004167391A JP4002909B2 (ja) | 2004-06-04 | 2004-06-04 | Cpp型巨大磁気抵抗効果ヘッド |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005346869A JP2005346869A (ja) | 2005-12-15 |
JP4002909B2 true JP4002909B2 (ja) | 2007-11-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004167391A Expired - Fee Related JP4002909B2 (ja) | 2004-06-04 | 2004-06-04 | Cpp型巨大磁気抵抗効果ヘッド |
Country Status (2)
Country | Link |
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US (1) | US7365949B2 (ja) |
JP (1) | JP4002909B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9514771B2 (en) | 2015-03-30 | 2016-12-06 | Tdk Corporation | Magneto-resistive effect element with recessed antiferromagnetic layer |
Families Citing this family (47)
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JP4826097B2 (ja) * | 2005-02-23 | 2011-11-30 | Tdk株式会社 | 磁気検出素子及びその製造方法 |
JP2008021896A (ja) * | 2006-07-14 | 2008-01-31 | Tdk Corp | Cpp構造のgmr素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置 |
JP2008084373A (ja) * | 2006-09-26 | 2008-04-10 | Tdk Corp | 薄膜磁気ヘッドの製造方法及び薄膜磁気ヘッド |
US20080088985A1 (en) * | 2006-10-16 | 2008-04-17 | Driskill-Smith Alexander Adria | Magnetic head having CPP sensor with partially milled stripe height |
US7580230B2 (en) * | 2006-10-24 | 2009-08-25 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges |
WO2008126136A1 (ja) * | 2007-03-20 | 2008-10-23 | Fujitsu Limited | 磁気ヘッド |
US7672087B2 (en) | 2007-03-27 | 2010-03-02 | Tdk Corporation | Magnetoresistive effect element having bias layer with internal stress controlled |
US9007727B2 (en) * | 2007-07-17 | 2015-04-14 | HGST Netherlands B.V. | Magnetic head having CPP sensor with improved stabilization of the magnetization of the pinned magnetic layer |
US8031442B2 (en) * | 2007-08-01 | 2011-10-04 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic head having CPP sensor with improved biasing for free magnetic layer |
US20090161269A1 (en) * | 2007-12-21 | 2009-06-25 | James Mac Freitag | Magnetoresistive sensor having an enhanced free layer stabilization mechanism |
US7952839B2 (en) | 2008-01-28 | 2011-05-31 | Tdk Corporation | Magnetoresistive element including an antiferromagnetic layer disposed away from a detection surface |
JP2010134997A (ja) | 2008-12-04 | 2010-06-17 | Hitachi Global Storage Technologies Netherlands Bv | Cpp構造の磁気抵抗効果型ヘッド |
US8054587B2 (en) * | 2009-01-09 | 2011-11-08 | Tdk Corporation | Magnetoresistive effect element, thin-film magnetic head with magnetoresistive effect read head element, and magnetic disk drive apparatus with thin-film magnetic head |
US8553369B2 (en) * | 2010-11-30 | 2013-10-08 | Seagate Technology Llc | Magnetic element with improved stability and including at least one antiferromagnetic tab |
US8339752B1 (en) | 2011-09-26 | 2012-12-25 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic head with wide sensor back edge, low resistance, and high signal to-noise ratio and methods of production thereof |
US8907666B2 (en) | 2011-09-30 | 2014-12-09 | HGST Netherlands B.V. | Magnetic bias structure for magnetoresistive sensor having a scissor structure |
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US9269382B1 (en) * | 2012-06-29 | 2016-02-23 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities |
US8711528B1 (en) | 2012-06-29 | 2014-04-29 | Western Digital (Fremont), Llc | Tunnel magnetoresistance read head with narrow shield-to-shield spacing |
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US8854773B2 (en) | 2012-11-28 | 2014-10-07 | Seagate Technology Llc | Side shield biasing layer separated from an air bearing surface |
US8842395B2 (en) * | 2012-12-19 | 2014-09-23 | HGST Netherlands B.V. | Magnetic sensor having an extended pinned layer and shape enhanced bias structure |
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US9042062B2 (en) * | 2013-08-27 | 2015-05-26 | HGST Netherlands B.V. | Magnetic sensor with recessed AFM shape enhanced pinning and soft magnetic bias |
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-
2004
- 2004-06-04 JP JP2004167391A patent/JP4002909B2/ja not_active Expired - Fee Related
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2005
- 2005-05-31 US US11/141,543 patent/US7365949B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9514771B2 (en) | 2015-03-30 | 2016-12-06 | Tdk Corporation | Magneto-resistive effect element with recessed antiferromagnetic layer |
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Publication number | Publication date |
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US20050270703A1 (en) | 2005-12-08 |
JP2005346869A (ja) | 2005-12-15 |
US7365949B2 (en) | 2008-04-29 |
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