JP3971873B2 - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法 Download PDF

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Publication number
JP3971873B2
JP3971873B2 JP25799099A JP25799099A JP3971873B2 JP 3971873 B2 JP3971873 B2 JP 3971873B2 JP 25799099 A JP25799099 A JP 25799099A JP 25799099 A JP25799099 A JP 25799099A JP 3971873 B2 JP3971873 B2 JP 3971873B2
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Japan
Prior art keywords
gate
film
integrated circuit
circuit device
semiconductor integrated
Prior art date
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Expired - Fee Related
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JP25799099A
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English (en)
Japanese (ja)
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JP2001085541A (ja
JP2001085541A5 (enExample
Inventor
小林　　孝
康 後藤
得男 久禮
英明 倉田
均 久米
勝高 木村
俊一 佐伯
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP25799099A priority Critical patent/JP3971873B2/ja
Priority to TW089115624A priority patent/TW497265B/zh
Priority to MYPI20004160A priority patent/MY138321A/en
Priority to PCT/JP2000/006146 priority patent/WO2001020667A1/ja
Priority to US10/031,117 priority patent/US6797566B1/en
Priority to KR10-2002-7000712A priority patent/KR100474472B1/ko
Publication of JP2001085541A publication Critical patent/JP2001085541A/ja
Priority to US10/899,119 priority patent/US7105409B2/en
Publication of JP2001085541A5 publication Critical patent/JP2001085541A5/ja
Priority to US11/499,756 priority patent/US20060275986A1/en
Application granted granted Critical
Publication of JP3971873B2 publication Critical patent/JP3971873B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP25799099A 1999-09-10 1999-09-10 半導体集積回路装置およびその製造方法 Expired - Fee Related JP3971873B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP25799099A JP3971873B2 (ja) 1999-09-10 1999-09-10 半導体集積回路装置およびその製造方法
TW089115624A TW497265B (en) 1999-09-10 2000-08-03 Semiconductor integrated circuit device and its manufacturing method
PCT/JP2000/006146 WO2001020667A1 (en) 1999-09-10 2000-09-08 Integrated circuit and method of manufacture thereof
US10/031,117 US6797566B1 (en) 1999-09-10 2000-09-08 Semiconductor integrated circuit device and process for producing the same
MYPI20004160A MY138321A (en) 1999-09-10 2000-09-08 Semiconductor integrated circuit device and process for producing the same
KR10-2002-7000712A KR100474472B1 (ko) 1999-09-10 2000-09-08 반도체 집적회로장치 및 그 제조방법
US10/899,119 US7105409B2 (en) 1999-09-10 2004-07-27 Semiconductor integrated circuit device and process for producing the same
US11/499,756 US20060275986A1 (en) 1999-09-10 2006-08-07 Semiconductor intergrated circuit device and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25799099A JP3971873B2 (ja) 1999-09-10 1999-09-10 半導体集積回路装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007121536A Division JP2007201510A (ja) 2007-05-02 2007-05-02 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001085541A JP2001085541A (ja) 2001-03-30
JP2001085541A5 JP2001085541A5 (enExample) 2006-04-13
JP3971873B2 true JP3971873B2 (ja) 2007-09-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP25799099A Expired - Fee Related JP3971873B2 (ja) 1999-09-10 1999-09-10 半導体集積回路装置およびその製造方法

Country Status (6)

Country Link
US (3) US6797566B1 (enExample)
JP (1) JP3971873B2 (enExample)
KR (1) KR100474472B1 (enExample)
MY (1) MY138321A (enExample)
TW (1) TW497265B (enExample)
WO (1) WO2001020667A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP3971873B2 (ja) * 1999-09-10 2007-09-05 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
JP4339112B2 (ja) 2001-07-03 2009-10-07 エヌエックスピー ビー ヴィ 選択トランジスタとメモリトランジスタを含む複数のメモリセルを有する不揮発性メモリを備えた半導体装置の製造方法
ATE422268T1 (de) * 2001-08-06 2009-02-15 Nxp Bv Herstellungsverfahren in spacer-technik für einen festwertspeichertransistor mit auswahlgate an einer seite eines kontrollgate-floating-gate- stapels
US6984558B2 (en) * 2001-08-06 2006-01-10 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with non-volatile memory comprising a memory cell with an access gate and with a control gate and a charge storage region
JP2003086717A (ja) 2001-09-12 2003-03-20 Mitsubishi Electric Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込み方法及び不揮発性半導体記憶装置の消去方法
JP2003188290A (ja) 2001-12-19 2003-07-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
KR100854896B1 (ko) * 2002-06-05 2008-08-28 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
KR100861792B1 (ko) * 2002-07-16 2008-10-08 매그나칩 반도체 유한회사 매몰 소오스라인을 구비하는 노아형 플래쉬 메모리 소자 및 그 제조방법
DE10245153A1 (de) * 2002-09-27 2004-04-15 Infineon Technologies Ag Integrierter Feldeffekttransistor mit zwei Steuerbereichen, Verwendung dieses Feldeffekttranistors und Herstellungsverfahren
US20040129986A1 (en) 2002-11-28 2004-07-08 Renesas Technology Corp. Nonvolatile semiconductor memory device and manufacturing method thereof
US6873541B2 (en) * 2003-06-09 2005-03-29 Macronix International Co., Ltd. Nonvolatile memory programmble by a heat induced chemical reaction
US7064032B2 (en) * 2003-07-25 2006-06-20 Macronix International Co., Ltd. Method for forming non-volatile memory cell with low-temperature-formed dielectric between word and bit lines, and non-volatile memory array including such memory cells
JP2005085903A (ja) 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
US7387932B2 (en) * 2004-07-06 2008-06-17 Macronix International Co., Ltd. Method for manufacturing a multiple-gate charge trapping non-volatile memory
JP2006121009A (ja) * 2004-10-25 2006-05-11 Renesas Technology Corp 半導体記憶装置およびその製造方法
KR100698064B1 (ko) * 2004-12-30 2007-03-23 동부일렉트로닉스 주식회사 마스크 롬 및 이의 제조 방법
US7473589B2 (en) 2005-12-09 2009-01-06 Macronix International Co., Ltd. Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US8482052B2 (en) 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
US7763927B2 (en) 2005-12-15 2010-07-27 Macronix International Co., Ltd. Non-volatile memory device having a nitride-oxide dielectric layer
US7907450B2 (en) 2006-05-08 2011-03-15 Macronix International Co., Ltd. Methods and apparatus for implementing bit-by-bit erase of a flash memory device
US8772858B2 (en) 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
US7811890B2 (en) 2006-10-11 2010-10-12 Macronix International Co., Ltd. Vertical channel transistor structure and manufacturing method thereof
US7700473B2 (en) * 2007-04-09 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Gated semiconductor device and method of fabricating same
US20090039414A1 (en) 2007-08-09 2009-02-12 Macronix International Co., Ltd. Charge trapping memory cell with high speed erase
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8445953B2 (en) 2009-07-08 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for flash memory cells
US9240405B2 (en) 2011-04-19 2016-01-19 Macronix International Co., Ltd. Memory with off-chip controller
CN114927528B (zh) * 2022-04-22 2025-09-12 上海华虹宏力半导体制造有限公司 存储器结构及其形成方法

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JPS6325979A (ja) 1986-07-18 1988-02-03 Hitachi Ltd 半導体集積回路装置
FR2603128B1 (fr) * 1986-08-21 1988-11-10 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
JPH07130884A (ja) 1993-10-29 1995-05-19 Oki Electric Ind Co Ltd 不揮発性半導体メモリの製造方法
JP3107691B2 (ja) * 1993-12-03 2000-11-13 株式会社東芝 半導体記憶装置及びその製造方法
GB2292008A (en) * 1994-07-28 1996-02-07 Hyundai Electronics Ind A split gate type flash eeprom cell
US5541130A (en) 1995-06-07 1996-07-30 International Business Machines Corporation Process for making and programming a flash memory array
US5682055A (en) * 1995-06-07 1997-10-28 Sgs-Thomson Microelectronics, Inc. Method of forming planarized structures in an integrated circuit
JPH09116119A (ja) 1995-10-13 1997-05-02 Sony Corp 不揮発性半導体記憶装置
JP3234528B2 (ja) 1996-03-29 2001-12-04 三洋電機株式会社 スプリットゲート型トランジスタの製造方法
US5780341A (en) * 1996-12-06 1998-07-14 Halo Lsi Design & Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
JP4330670B2 (ja) * 1997-06-06 2009-09-16 株式会社東芝 不揮発性半導体記憶装置
DE19732870C2 (de) * 1997-07-30 1999-10-07 Siemens Ag Nichtflüchtige Speicherzelle mit hoher Koppelkapazität und Verfahren zu ihrer Herstellung
US6326293B1 (en) * 1997-12-19 2001-12-04 Texas Instruments Incorporated Formation of recessed polysilicon plugs using chemical-mechanical-polishing (CMP) and selective oxidation
US6150691A (en) * 1997-12-19 2000-11-21 Micron Technology, Inc. Spacer patterned, high dielectric constant capacitor
JP4367979B2 (ja) * 1998-01-27 2009-11-18 正気 小椋 不揮発性半導体記憶装置の製造方法
JP4012341B2 (ja) * 1999-07-14 2007-11-21 株式会社ルネサステクノロジ 半導体集積回路装置
JP3971873B2 (ja) * 1999-09-10 2007-09-05 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
TW497265B (en) 2002-08-01
US20060275986A1 (en) 2006-12-07
MY138321A (en) 2009-05-29
WO2001020667A1 (en) 2001-03-22
KR20020020938A (ko) 2002-03-16
KR100474472B1 (ko) 2005-03-10
US20050014326A1 (en) 2005-01-20
JP2001085541A (ja) 2001-03-30
US7105409B2 (en) 2006-09-12
US6797566B1 (en) 2004-09-28

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