JP3950838B2 - FePtC薄膜を利用した高密度磁気記録媒体及びその製造方法 - Google Patents
FePtC薄膜を利用した高密度磁気記録媒体及びその製造方法 Download PDFInfo
- Publication number
- JP3950838B2 JP3950838B2 JP2003367342A JP2003367342A JP3950838B2 JP 3950838 B2 JP3950838 B2 JP 3950838B2 JP 2003367342 A JP2003367342 A JP 2003367342A JP 2003367342 A JP2003367342 A JP 2003367342A JP 3950838 B2 JP3950838 B2 JP 3950838B2
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- Prior art keywords
- carbon
- thin film
- magnetic recording
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- recording medium
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000010409 thin film Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 50
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims 1
- 229910005335 FePt Inorganic materials 0.000 description 32
- 230000008859 change Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 230000005415 magnetization Effects 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
第一に、FePtに炭素を添加することによってFePt粒子の大きさを炭素の添加が25体積%の場合5nmから50体積%の添加時には4nmまで減らすことができ、均一な分布が得られる。それで磁気記録物質の記録密度を高め、ノイズを減らせる効果を得る。
Claims (7)
- 情報を記録する情報記録手段及び前記情報記録手段により情報が磁気的に記録される情報貯蔵手段からなる磁気記録媒体であって、前記情報貯蔵手段は、鉄(Fe)、白金(Pt)、及び炭素(C)を同時蒸着したFePtC薄膜を含み、該FePtC薄膜中の炭素の含量が10〜50体積%である、前記磁気記録媒体。
- 情報を記録する情報記録手段及び前記情報記録手段により情報が磁気的に記録される情報貯蔵手段からなる磁気記録媒体の製造方法であって、前記情報貯蔵手段が、基板上に鉄(Fe)、白金(Pt)、及び炭素(C)を同時蒸着してFePtC薄膜を形成することによって製造され、該FePtC薄膜中の炭素の含量が10〜50体積%である、磁気記録媒体の製造方法。
- FePtC薄膜を、スパッタリング装置を用いて同時蒸着する、請求項2に記載の製造方法。
- 炭素の含量が、25体積%である、請求項2または3に記載の製造方法。
- 基板に酸化マグネシウム(MgO)基板を用い、請求項2〜4のいずれかに記載の製造方法。
- 蒸着と同時に基板を400℃で熱処理する、請求項2〜5のいずれかに記載の製造方法。
- 蒸着及び熱処理を行う時間が、1時間である、請求項6に記載の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0066163A KR100470151B1 (ko) | 2002-10-29 | 2002-10-29 | FePtC 박막을 이용한 고밀도 자기기록매체 및 그제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004152471A JP2004152471A (ja) | 2004-05-27 |
JP3950838B2 true JP3950838B2 (ja) | 2007-08-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003367342A Expired - Fee Related JP3950838B2 (ja) | 2002-10-29 | 2003-10-28 | FePtC薄膜を利用した高密度磁気記録媒体及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7241520B2 (ja) |
JP (1) | JP3950838B2 (ja) |
KR (1) | KR100470151B1 (ja) |
Cited By (5)
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JP2012214874A (ja) * | 2011-03-30 | 2012-11-08 | Tanaka Kikinzoku Kogyo Kk | FePt−C系スパッタリングターゲット及びその製造方法 |
CN103228816A (zh) * | 2010-11-29 | 2013-07-31 | 三井金属矿业株式会社 | 溅射靶 |
US9095901B2 (en) | 2012-01-13 | 2015-08-04 | Tanaka Kikinzoku Kogyo K.K. | FePt-based sputtering target |
US10186404B2 (en) | 2013-03-01 | 2019-01-22 | Tanaka Kikinzoku Kogyo K.K. | FePt—C-based sputtering target and method for manufacturing same |
US10787732B2 (en) | 2016-03-07 | 2020-09-29 | Tanaka Kikinzoku Kogyo K.K. | FePt-C-based sputtering target |
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JP4765719B2 (ja) * | 2005-06-27 | 2011-09-07 | Tdk株式会社 | 焼結体、磁気ヘッドスライダ、及び焼結体の製造方法 |
JP4810360B2 (ja) * | 2006-08-31 | 2011-11-09 | 石福金属興業株式会社 | 磁性薄膜 |
US9401170B1 (en) | 2009-11-24 | 2016-07-26 | WD Media, LLC | Perpendicular magnetic recording medium with epitaxial exchange coupling layer |
US8173282B1 (en) | 2009-12-11 | 2012-05-08 | Wd Media, Inc. | Perpendicular magnetic recording medium with an ordering temperature reducing layer |
US8784278B2 (en) | 2010-05-28 | 2014-07-22 | Hydroworx International, Inc. | Underwater treadmill and integrated jet device and method for selectively controlling an underwater treadmill system |
US8945732B1 (en) | 2010-08-05 | 2015-02-03 | WD Media, LLC | Dual-magnetic layer high anisotropy media with orientation initialization layer |
US8530065B1 (en) | 2010-08-10 | 2013-09-10 | WD Media, LLC | Composite magnetic recording medium |
US8889275B1 (en) * | 2010-08-20 | 2014-11-18 | WD Media, LLC | Single layer small grain size FePT:C film for heat assisted magnetic recording media |
WO2012073879A1 (ja) * | 2010-11-29 | 2012-06-07 | 三井金属鉱業株式会社 | スパッタリングターゲット |
US9945026B2 (en) | 2010-12-20 | 2018-04-17 | Jx Nippon Mining & Metals Corporation | Fe-Pt-based sputtering target with dispersed C grains |
US8940418B1 (en) | 2010-12-23 | 2015-01-27 | WD Media, LLC | Dynamic spring media with multiple exchange coupled hard-soft magnetic layers |
JP5041261B2 (ja) * | 2011-01-31 | 2012-10-03 | 三菱マテリアル株式会社 | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
JP5041262B2 (ja) * | 2011-01-31 | 2012-10-03 | 三菱マテリアル株式会社 | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
MY154754A (en) | 2011-03-30 | 2015-07-15 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film |
JP6037197B2 (ja) * | 2011-05-09 | 2016-12-07 | 三菱マテリアル株式会社 | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
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JP5811672B2 (ja) * | 2011-08-04 | 2015-11-11 | 富士電機株式会社 | 垂直磁気記録媒体およびその製造方法 |
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JP2014034730A (ja) * | 2012-08-10 | 2014-02-24 | Mitsui Mining & Smelting Co Ltd | 焼結体およびスパッタリングターゲット |
JP6108064B2 (ja) * | 2012-08-24 | 2017-04-05 | 三菱マテリアル株式会社 | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
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US3812044A (en) * | 1970-12-28 | 1974-05-21 | Procter & Gamble | Detergent composition containing a polyfunctionally-substituted aromatic acid sequestering agent |
US5023148A (en) * | 1987-12-30 | 1991-06-11 | Seagate Technology, Inc. | Tine film cobalt-containing recording medium |
JPH04214206A (ja) * | 1990-12-13 | 1992-08-05 | Matsushita Electric Ind Co Ltd | 強磁性薄膜とその製造方法 |
US6086974A (en) * | 1997-08-29 | 2000-07-11 | International Business Machines Corporation | Horizontal magnetic recording media having grains of chemically-ordered FEPT of COPT |
US20030108721A1 (en) * | 2001-12-11 | 2003-06-12 | Fullerton Eric E. | Thermally - assisted magnetic recording disk with recording layer exchange- coupled to antiferromagnetic-to-ferromagnetic switching layer |
US6780291B2 (en) * | 2002-06-07 | 2004-08-24 | Seagate Technology Llc | Self-annealed thin film deposition process |
-
2002
- 2002-10-29 KR KR10-2002-0066163A patent/KR100470151B1/ko not_active IP Right Cessation
-
2003
- 2003-10-06 US US10/679,543 patent/US7241520B2/en not_active Expired - Fee Related
- 2003-10-28 JP JP2003367342A patent/JP3950838B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-21 US US11/255,908 patent/US20060051622A1/en not_active Abandoned
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US9011653B2 (en) | 2010-11-29 | 2015-04-21 | Mitsui Mining & Smelting Co., Ltd. | Sputtering target |
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JP2012214874A (ja) * | 2011-03-30 | 2012-11-08 | Tanaka Kikinzoku Kogyo Kk | FePt−C系スパッタリングターゲット及びその製造方法 |
US8858674B2 (en) | 2011-03-30 | 2014-10-14 | Tanaka Kikinzoku Kogyo K.K. | FePt—C-based sputtering target and process for producing the same |
US9228255B2 (en) | 2011-03-30 | 2016-01-05 | Tanaka Kikinzoku Kogyo K.K. | FePt-C-based sputtering target and process for producing the same |
US9095901B2 (en) | 2012-01-13 | 2015-08-04 | Tanaka Kikinzoku Kogyo K.K. | FePt-based sputtering target |
US9314846B2 (en) | 2012-01-13 | 2016-04-19 | Tanaka Kikinzoku Kogyo K.K. | Process for producing FePt-based sputtering target |
US9314845B2 (en) | 2012-01-13 | 2016-04-19 | Tanaka Kikinzoku Kogyo K.K. | Process for producing FePt-based sputtering target |
US9358612B2 (en) | 2012-01-13 | 2016-06-07 | Tanaka Kikinzoku Kogyo K.K. | FePt-based sputtering target |
US10186404B2 (en) | 2013-03-01 | 2019-01-22 | Tanaka Kikinzoku Kogyo K.K. | FePt—C-based sputtering target and method for manufacturing same |
US10787732B2 (en) | 2016-03-07 | 2020-09-29 | Tanaka Kikinzoku Kogyo K.K. | FePt-C-based sputtering target |
Also Published As
Publication number | Publication date |
---|---|
KR20040037609A (ko) | 2004-05-07 |
JP2004152471A (ja) | 2004-05-27 |
US20060051622A1 (en) | 2006-03-09 |
US20040110035A1 (en) | 2004-06-10 |
US7241520B2 (en) | 2007-07-10 |
KR100470151B1 (ko) | 2005-02-05 |
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