JP3916011B2 - 窒化ガリウム系化合物半導体発光素子及びその製造方法 - Google Patents

窒化ガリウム系化合物半導体発光素子及びその製造方法 Download PDF

Info

Publication number
JP3916011B2
JP3916011B2 JP3819897A JP3819897A JP3916011B2 JP 3916011 B2 JP3916011 B2 JP 3916011B2 JP 3819897 A JP3819897 A JP 3819897A JP 3819897 A JP3819897 A JP 3819897A JP 3916011 B2 JP3916011 B2 JP 3916011B2
Authority
JP
Japan
Prior art keywords
gallium nitride
compound semiconductor
semiconductor layer
nitride compound
type gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3819897A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242516A5 (https=
JPH10242516A (ja
Inventor
俊雄 幡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3819897A priority Critical patent/JP3916011B2/ja
Publication of JPH10242516A publication Critical patent/JPH10242516A/ja
Publication of JPH10242516A5 publication Critical patent/JPH10242516A5/ja
Application granted granted Critical
Publication of JP3916011B2 publication Critical patent/JP3916011B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP3819897A 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法 Expired - Fee Related JP3916011B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3819897A JP3916011B2 (ja) 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3819897A JP3916011B2 (ja) 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JPH10242516A JPH10242516A (ja) 1998-09-11
JPH10242516A5 JPH10242516A5 (https=) 2005-01-06
JP3916011B2 true JP3916011B2 (ja) 2007-05-16

Family

ID=12518663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3819897A Expired - Fee Related JP3916011B2 (ja) 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP3916011B2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268618B1 (en) 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
JP4810751B2 (ja) * 2001-04-19 2011-11-09 日亜化学工業株式会社 窒化物半導体素子
JP2004047662A (ja) * 2002-07-11 2004-02-12 Rohm Co Ltd 半導体発光素子
KR100543696B1 (ko) * 2002-09-09 2006-01-20 삼성전기주식회사 고효율 발광 다이오드
JP2004200303A (ja) * 2002-12-17 2004-07-15 Sharp Corp 発光ダイオード
JP4317697B2 (ja) * 2003-01-30 2009-08-19 パナソニック株式会社 光半導体ベアチップ、プリント配線板、照明ユニットおよび照明装置
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4951865B2 (ja) * 2005-03-02 2012-06-13 日亜化学工業株式会社 半導体発光素子
KR100714627B1 (ko) 2005-11-01 2007-05-07 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP2008218440A (ja) * 2007-02-09 2008-09-18 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2008244425A (ja) * 2007-02-21 2008-10-09 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2010153581A (ja) * 2008-12-25 2010-07-08 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP5350833B2 (ja) * 2009-02-20 2013-11-27 株式会社東芝 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
KR101047721B1 (ko) 2010-03-09 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101081135B1 (ko) 2010-03-15 2011-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Also Published As

Publication number Publication date
JPH10242516A (ja) 1998-09-11

Similar Documents

Publication Publication Date Title
JP3916011B2 (ja) 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP5126875B2 (ja) 窒化物半導体発光素子の製造方法
JP4050444B2 (ja) 発光素子及びその製造方法
JP4183299B2 (ja) 窒化ガリウム系化合物半導体発光素子
US6838704B2 (en) Light emitting diode and method of making the same
USRE43411E1 (en) Series connection of two light emitting diodes through semiconductor manufacture process
JP3787202B2 (ja) 半導体発光素子
JP3333356B2 (ja) 半導体装置
JP4371956B2 (ja) 窒化物系化合物半導体発光素子およびその製造方法
JP5356292B2 (ja) 半導体発光素子及び半導体発光装置
KR20100035846A (ko) 발광 소자 및 그 제조방법
JPH10173224A (ja) 化合物半導体発光素子及びその製造方法
JP2001308383A (ja) 窒化物系半導体発光素子
JP3752339B2 (ja) 半導体発光素子
JPH10209496A (ja) 半導体発光素子
JP7472354B1 (ja) 半導体発光素子および半導体発光素子の製造方法
JP4597796B2 (ja) 窒化物系化合物半導体発光素子およびその製造方法
TW202013766A (zh) 半導體元件以及其相關之製造方法
JPH08102552A (ja) 半導体発光素子、およびその製造方法
JP2009170655A (ja) 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2941743B2 (ja) 化合物半導体発光素子及びその製造方法
JP2000049376A (ja) 発光素子
JP2005086137A (ja) ＧａＮ系発光ダイオード
JP4901241B2 (ja) 半導体発光素子及びその製造方法
JP4284722B2 (ja) 半導体発光素子の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040209

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040209

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060630

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060731

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060925

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20061107

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061226

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20070115

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070201

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070201

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100216

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110216

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120216

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120216

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130216

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130216

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140216

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees