JPH10242516A5 - - Google Patents

Info

Publication number
JPH10242516A5
JPH10242516A5 JP1997038198A JP3819897A JPH10242516A5 JP H10242516 A5 JPH10242516 A5 JP H10242516A5 JP 1997038198 A JP1997038198 A JP 1997038198A JP 3819897 A JP3819897 A JP 3819897A JP H10242516 A5 JPH10242516 A5 JP H10242516A5
Authority
JP
Japan
Prior art keywords
compound semiconductor
gallium nitride
nitride compound
semiconductor layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997038198A
Other languages
English (en)
Japanese (ja)
Other versions
JP3916011B2 (ja
JPH10242516A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP3819897A priority Critical patent/JP3916011B2/ja
Priority claimed from JP3819897A external-priority patent/JP3916011B2/ja
Publication of JPH10242516A publication Critical patent/JPH10242516A/ja
Publication of JPH10242516A5 publication Critical patent/JPH10242516A5/ja
Application granted granted Critical
Publication of JP3916011B2 publication Critical patent/JP3916011B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP3819897A 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法 Expired - Fee Related JP3916011B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3819897A JP3916011B2 (ja) 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3819897A JP3916011B2 (ja) 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JPH10242516A JPH10242516A (ja) 1998-09-11
JPH10242516A5 true JPH10242516A5 (https=) 2005-01-06
JP3916011B2 JP3916011B2 (ja) 2007-05-16

Family

ID=12518663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3819897A Expired - Fee Related JP3916011B2 (ja) 1997-02-21 1997-02-21 窒化ガリウム系化合物半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP3916011B2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268618B1 (en) 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
JP4810751B2 (ja) * 2001-04-19 2011-11-09 日亜化学工業株式会社 窒化物半導体素子
JP2004047662A (ja) * 2002-07-11 2004-02-12 Rohm Co Ltd 半導体発光素子
KR100543696B1 (ko) * 2002-09-09 2006-01-20 삼성전기주식회사 고효율 발광 다이오드
JP2004200303A (ja) * 2002-12-17 2004-07-15 Sharp Corp 発光ダイオード
JP4317697B2 (ja) * 2003-01-30 2009-08-19 パナソニック株式会社 光半導体ベアチップ、プリント配線板、照明ユニットおよび照明装置
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4951865B2 (ja) * 2005-03-02 2012-06-13 日亜化学工業株式会社 半導体発光素子
KR100714627B1 (ko) 2005-11-01 2007-05-07 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP2008218440A (ja) * 2007-02-09 2008-09-18 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2008244425A (ja) * 2007-02-21 2008-10-09 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2010153581A (ja) * 2008-12-25 2010-07-08 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP5350833B2 (ja) * 2009-02-20 2013-11-27 株式会社東芝 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
KR101047721B1 (ko) 2010-03-09 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101081135B1 (ko) 2010-03-15 2011-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Similar Documents

Publication Publication Date Title
JPH10242516A5 (https=)
JP3940438B2 (ja) 半導体発光素子
JP4050444B2 (ja) 発光素子及びその製造方法
JP2006528435A5 (https=)
TWI266439B (en) Semiconductor light emitting device and its manufacturing method
WO2004084320A3 (en) Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact
JP2008505483A5 (https=)
JPWO1998042030A1 (ja) 半導体発光素子
JPH0927639A (ja) 半導体装置
JP3960636B2 (ja) 発光素子
JP3068914U (ja) フリップ―チップ発光デバイス
EP1564854A4 (en) SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME
JP3916011B2 (ja) 窒化ガリウム系化合物半導体発光素子及びその製造方法
JPS58166779A (ja) 発光ダイオ−ド
KR100431760B1 (ko) AlGaInN계 반도체 엘이디(LED) 소자 및 그 제조 방법
US8101960B2 (en) Nitride light emitting device and manufacturing method thereof
CN113921679B (zh) 发光装置
TW201208134A (en) Light emitting device and semiconductor wafer
TW200608607A (en) Semiconductor light-emitting device and manufacturing method thereof
KR102255305B1 (ko) 수직형 반도체 발광소자 및 그 제조 방법
KR920017309A (ko) 레이저 다이오드 어레이 및 그 제조방법
KR890011026A (ko) 반도체 소자 제조방법
JP3746569B2 (ja) 発光半導体素子
US5923052A (en) Light emitting diode
CN115312644B (zh) 发光二极管及发光装置