JP3877810B2 - レーザ光源を備えた近視野光学装置 - Google Patents

レーザ光源を備えた近視野光学装置 Download PDF

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Publication number
JP3877810B2
JP3877810B2 JP23457696A JP23457696A JP3877810B2 JP 3877810 B2 JP3877810 B2 JP 3877810B2 JP 23457696 A JP23457696 A JP 23457696A JP 23457696 A JP23457696 A JP 23457696A JP 3877810 B2 JP3877810 B2 JP 3877810B2
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JP
Japan
Prior art keywords
laser
region
optical device
field optical
emission surface
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Expired - Lifetime
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JP23457696A
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English (en)
Japanese (ja)
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JPH09145603A (ja
Inventor
コンウェル ホプキンス レスリー
アン マレイ チェリー
パートヴィ アフシン
リース ピール ディヴィッド
ジェームス イー ヒー−ジェン
ジョン ズィッドズィック ジョージ
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AT&T Corp
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AT&T Corp
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Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/122Flying-type heads, e.g. analogous to Winchester type in magnetic recording
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/135Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
    • G11B7/1387Means for guiding the beam from the source to the record carrier or from the record carrier to the detector using the near-field effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394Apertures, e.g. defined by the shape of the upper electrode
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00Applications, other than SPM, of scanning-probe techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/18Semiconductor lasers with special structural design for influencing the near- or far-field
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286Coatings with a reflectivity that is not constant over the facets, e.g. apertures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP23457696A 1995-09-06 1996-09-05 レーザ光源を備えた近視野光学装置 Expired - Lifetime JP3877810B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/523884 1995-09-06
US08/523,884 US5625617A (en) 1995-09-06 1995-09-06 Near-field optical apparatus with a laser having a non-uniform emission face

Publications (2)

Publication Number Publication Date
JPH09145603A JPH09145603A (ja) 1997-06-06
JP3877810B2 true JP3877810B2 (ja) 2007-02-07

Family

ID=24086834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23457696A Expired - Lifetime JP3877810B2 (ja) 1995-09-06 1996-09-05 レーザ光源を備えた近視野光学装置

Country Status (5)

Country Link
US (1) US5625617A (enExample)
EP (1) EP0762566B1 (enExample)
JP (1) JP3877810B2 (enExample)
DE (1) DE69600964T2 (enExample)
TW (1) TW311296B (enExample)

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US6314122B1 (en) 1999-04-20 2001-11-06 Lucent Technologies Inc. Filament-based, optical detection apparatus
US6370219B1 (en) 1999-04-20 2002-04-09 Lucent Technologies Inc. Self-modulated, filament-based, solid state laser
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US6236513B1 (en) 1999-06-30 2001-05-22 Quantum Corporation Integrated objective/solid immersion lens for near field recording
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US7069569B2 (en) * 2000-02-01 2006-06-27 Research Investment Network, Inc. Near-field optical head system with integrated slider and laser
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JP2002134827A (ja) * 2000-10-27 2002-05-10 Tdk Corp 半導体レーザ及びその製造方法並びにこれを用いた近接場光ヘッド
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CN1233077C (zh) * 2001-05-31 2005-12-21 日亚化学工业株式会社 半导体元件
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JP7309364B2 (ja) 2016-06-01 2023-07-18 クアンタム-エスアイ インコーポレイテッド 分子を検出し分析するための集積デバイス
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Also Published As

Publication number Publication date
EP0762566A1 (en) 1997-03-12
JPH09145603A (ja) 1997-06-06
EP0762566B1 (en) 1998-11-11
DE69600964D1 (de) 1998-12-17
US5625617A (en) 1997-04-29
DE69600964T2 (de) 1999-06-17
TW311296B (enExample) 1997-07-21

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