DE69600964D1 - Optische Nahfeldvorrichtung mit Laserquelle - Google Patents

Optische Nahfeldvorrichtung mit Laserquelle

Info

Publication number
DE69600964D1
DE69600964D1 DE69600964T DE69600964T DE69600964D1 DE 69600964 D1 DE69600964 D1 DE 69600964D1 DE 69600964 T DE69600964 T DE 69600964T DE 69600964 T DE69600964 T DE 69600964T DE 69600964 D1 DE69600964 D1 DE 69600964D1
Authority
DE
Germany
Prior art keywords
laser source
field device
optical near
optical
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69600964T
Other languages
English (en)
Other versions
DE69600964T2 (de
Inventor
Leslie Conwell Hopkins
Cherry Ann Murray
Afshin Partovi
David Reese Peale
Hsi-Jen James Yeh
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69600964D1 publication Critical patent/DE69600964D1/de
Application granted granted Critical
Publication of DE69600964T2 publication Critical patent/DE69600964T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/122—Flying-type heads, e.g. analogous to Winchester type in magnetic recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/135—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
    • G11B7/1387—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector using the near-field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE69600964T 1995-09-06 1996-08-28 Optische Nahfeldvorrichtung mit Laserquelle Expired - Lifetime DE69600964T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/523,884 US5625617A (en) 1995-09-06 1995-09-06 Near-field optical apparatus with a laser having a non-uniform emission face

Publications (2)

Publication Number Publication Date
DE69600964D1 true DE69600964D1 (de) 1998-12-17
DE69600964T2 DE69600964T2 (de) 1999-06-17

Family

ID=24086834

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69600964T Expired - Lifetime DE69600964T2 (de) 1995-09-06 1996-08-28 Optische Nahfeldvorrichtung mit Laserquelle

Country Status (5)

Country Link
US (1) US5625617A (de)
EP (1) EP0762566B1 (de)
JP (1) JP3877810B2 (de)
DE (1) DE69600964T2 (de)
TW (1) TW311296B (de)

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JP2000221131A (ja) 1999-02-02 2000-08-11 Agency Of Ind Science & Technol 開口径可変型近接場プローブ
US6370219B1 (en) 1999-04-20 2002-04-09 Lucent Technologies Inc. Self-modulated, filament-based, solid state laser
US6314122B1 (en) 1999-04-20 2001-11-06 Lucent Technologies Inc. Filament-based, optical detection apparatus
JP2000357339A (ja) 1999-06-14 2000-12-26 Minolta Co Ltd 近接場光発生装置
US6236513B1 (en) 1999-06-30 2001-05-22 Quantum Corporation Integrated objective/solid immersion lens for near field recording
US7129006B2 (en) * 1999-07-30 2006-10-31 Research Investment Network, Inc. Optical data storage system and method
US7095767B1 (en) * 1999-08-30 2006-08-22 Research Investment Network, Inc. Near field optical apparatus
JP2001074632A (ja) 1999-09-02 2001-03-23 Minolta Co Ltd 光スポット形成装置の光射出部の形成方法
US6762977B1 (en) 1999-09-13 2004-07-13 Seagate Technology Llc Laser assisted magnetic recording apparatus and method
US6351443B1 (en) * 1999-11-04 2002-02-26 Industrial Technology Research Institute Diffractive stack pickup head for optical disk drives and method to fabricate the pickup head
US6963530B1 (en) * 2000-02-01 2005-11-08 Research Investment Network, Inc. Near-field optical head system with integrated slider and laser
US7069569B2 (en) * 2000-02-01 2006-06-27 Research Investment Network, Inc. Near-field optical head system with integrated slider and laser
US6937637B1 (en) * 2000-02-01 2005-08-30 Research Investment Network, Inc. Semiconductor laser and associated drive circuit substrate
US6574257B1 (en) 2000-02-01 2003-06-03 Siros Technologies, Inc. Near-field laser and detector apparatus and method
US6834027B1 (en) 2000-02-28 2004-12-21 Nec Laboratories America, Inc. Surface plasmon-enhanced read/write heads for optical data storage media
US6465795B1 (en) * 2000-03-28 2002-10-15 Applied Materials, Inc. Charge neutralization of electron beam systems
US6432346B1 (en) 2000-05-03 2002-08-13 Iomega Corporation Process of making magnetic recording disk
US6549506B1 (en) * 2000-07-17 2003-04-15 Iomega Corporation Photo detector mounting in a head gimbal assembly used in an optical data storage device
US6274463B1 (en) * 2000-07-31 2001-08-14 Hewlett-Packard Company Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method
JP2002134827A (ja) * 2000-10-27 2002-05-10 Tdk Corp 半導体レーザ及びその製造方法並びにこれを用いた近接場光ヘッド
US6807131B1 (en) * 2000-12-27 2004-10-19 Research Investment Network, Inc. Near-field hybrid magnetic-optical head system
ATE487255T1 (de) 2001-05-31 2010-11-15 Nichia Corp Halbleiterlaserelement
US6950260B2 (en) 2001-06-04 2005-09-27 Hitachi Global Technologies Netherlands B.V. Thermally assisted magnetic recording system and method of writing using magnetic and thermal gradients
KR20030010280A (ko) * 2001-07-26 2003-02-05 엘지전자 주식회사 근접장 광 재생 및 기록 장치의 집속부의 적층구조
US6982844B2 (en) * 2001-12-18 2006-01-03 International Business Machines Corporation Optical aperture for data recording having transmission enhanced by surface plasmon resonance
US6975580B2 (en) 2001-12-18 2005-12-13 Interntional Business Machines Corporation Optical aperture for data recording having transmission enhanced by waveguide mode resonance
US7272102B2 (en) * 2002-03-29 2007-09-18 Seagate Technology Llc Ridge waveguide with recess
JP2005317178A (ja) * 2004-03-29 2005-11-10 Sharp Corp 記録再生装置、記録媒体、記録再生装置の駆動方法、半導体レーザの寿命予測方法、プログラム、プログラム記録媒体、半導体レーザ
US7319522B2 (en) * 2004-05-27 2008-01-15 Finesse Solutions Llc. Systems and methods for in situ spectroscopic measurements
DE102004040277B4 (de) * 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
US9065239B2 (en) * 2012-04-17 2015-06-23 Trilumina Corp. Multibeam array of top emitting VCSEL elements
WO2014018684A1 (en) * 2012-07-24 2014-01-30 Joseph John R Multibeam array of top emitting vcsel elements
DE102012016178B3 (de) * 2012-08-16 2013-08-29 Forschungszentrum Jülich GmbH Verfahren zur optischen Übertragung einer Struktur in ein Aufnahmemedium
US11226290B2 (en) * 2016-06-01 2022-01-18 Quantum-Si Incorporated Photonic structures and integrated device for detecting and analyzing molecules
JP2021077669A (ja) * 2019-11-05 2021-05-20 住友電気工業株式会社 量子カスケードレーザ
CN111610345B (zh) * 2020-06-04 2022-04-19 中国科学技术大学 一种远红外探测器及近场显微镜

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Also Published As

Publication number Publication date
JP3877810B2 (ja) 2007-02-07
EP0762566B1 (de) 1998-11-11
US5625617A (en) 1997-04-29
EP0762566A1 (de) 1997-03-12
DE69600964T2 (de) 1999-06-17
JPH09145603A (ja) 1997-06-06
TW311296B (de) 1997-07-21

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Legal Events

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8364 No opposition during term of opposition