ATE487255T1 - Halbleiterlaserelement - Google Patents

Halbleiterlaserelement

Info

Publication number
ATE487255T1
ATE487255T1 AT02733264T AT02733264T ATE487255T1 AT E487255 T1 ATE487255 T1 AT E487255T1 AT 02733264 T AT02733264 T AT 02733264T AT 02733264 T AT02733264 T AT 02733264T AT E487255 T1 ATE487255 T1 AT E487255T1
Authority
AT
Austria
Prior art keywords
conductive type
resonator
laser element
active layer
semiconductor laser
Prior art date
Application number
AT02733264T
Other languages
English (en)
Inventor
Yasunobu Sugimoto
Masanao Ochiai
Akinori Yoneda
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of ATE487255T1 publication Critical patent/ATE487255T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AT02733264T 2001-05-31 2002-05-31 Halbleiterlaserelement ATE487255T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001165543 2001-05-31
JP2001269407 2001-09-05
JP2001361674 2001-11-27
JP2001378783 2001-12-12
PCT/JP2002/005326 WO2002101894A1 (fr) 2001-05-31 2002-05-31 Element laser a semi-conducteurs

Publications (1)

Publication Number Publication Date
ATE487255T1 true ATE487255T1 (de) 2010-11-15

Family

ID=27482311

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02733264T ATE487255T1 (de) 2001-05-31 2002-05-31 Halbleiterlaserelement

Country Status (11)

Country Link
US (2) US7103082B2 (de)
EP (1) EP1406360B1 (de)
JP (1) JP4370911B2 (de)
KR (1) KR100778909B1 (de)
CN (1) CN1233077C (de)
AT (1) ATE487255T1 (de)
CA (1) CA2449047C (de)
DE (1) DE60238195D1 (de)
MY (1) MY132031A (de)
TW (1) TW557618B (de)
WO (1) WO2002101894A1 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2411445C (en) * 2000-06-08 2011-08-16 Nichia Corporation Semiconductor laser device, and method of manufacturing the same
JP4370911B2 (ja) * 2001-05-31 2009-11-25 日亜化学工業株式会社 半導体レーザ素子
KR20040050598A (ko) * 2002-12-10 2004-06-16 삼성전기주식회사 반도체 레이저 소자 및 그 제조방법
WO2004059706A2 (en) * 2002-12-20 2004-07-15 Cree, Inc. Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
US7260130B2 (en) * 2003-03-31 2007-08-21 Sanyo Electric Co., Ltd. Semiconductor laser device and method of fabricating the same
JP4830315B2 (ja) * 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子
JP4522126B2 (ja) * 2004-03-31 2010-08-11 三洋電機株式会社 半導体レーザ素子
WO2005122289A1 (en) * 2004-06-09 2005-12-22 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
KR100856281B1 (ko) * 2004-11-24 2008-09-03 삼성전기주식회사 반도체 레이저 다이오드 및 그 제조방법
CN100379103C (zh) * 2004-12-17 2008-04-02 夏普株式会社 半导体激光器件和设置有其的光信息记录设备
CN101160699A (zh) 2005-02-18 2008-04-09 宾奥普迪克斯股份有限公司 高可靠性的蚀刻小面光子器件
JP4210665B2 (ja) * 2005-03-24 2009-01-21 ローム株式会社 酸化亜鉛系化合物半導体発光素子
US20090323746A1 (en) * 2005-06-16 2009-12-31 Susumu Ohmi Nitride Semiconductor Laser and Method for Fabricating Same
JP4030556B2 (ja) * 2005-06-30 2008-01-09 シャープ株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ装置
JP2007109737A (ja) * 2005-10-11 2007-04-26 Toshiba Corp 窒化物半導体レーザ装置及びその製造方法
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP4762729B2 (ja) * 2006-01-13 2011-08-31 シャープ株式会社 半導体レーザ素子の実装構造
JP4905125B2 (ja) * 2006-01-26 2012-03-28 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP2007214221A (ja) * 2006-02-08 2007-08-23 Sharp Corp 窒化物半導体レーザ素子
KR101136161B1 (ko) * 2006-02-15 2012-04-17 엘지전자 주식회사 레이저 다이오드
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN100568563C (zh) * 2006-03-06 2009-12-09 夏普株式会社 氮化物半导体器件及其制备方法
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP2007280975A (ja) * 2006-03-13 2007-10-25 Mitsubishi Electric Corp 半導体レーザ
JP4444304B2 (ja) 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5056142B2 (ja) * 2006-05-11 2012-10-24 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法及び窒化物半導体レーザ素子
KR101262226B1 (ko) * 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
JP5378651B2 (ja) 2007-01-31 2013-12-25 日本オクラロ株式会社 半導体レーザ素子及びその製造方法
US7764722B2 (en) * 2007-02-26 2010-07-27 Nichia Corporation Nitride semiconductor laser element
JP5670009B2 (ja) * 2007-02-26 2015-02-18 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4310352B2 (ja) * 2007-06-05 2009-08-05 シャープ株式会社 発光デバイスおよび発光デバイスの製造方法
WO2009066464A1 (ja) * 2007-11-21 2009-05-28 Mitsubishi Chemical Corporation 窒化物半導体および窒化物半導体の結晶成長方法
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
RU2391756C2 (ru) * 2008-06-06 2010-06-10 Василий Иванович Швейкин Диодный лазер, интегральный диодный лазер и интегральный полупроводниковый оптический усилитель
JP5347566B2 (ja) * 2009-02-27 2013-11-20 日亜化学工業株式会社 半導体発光素子及びその製造方法
JP2010205829A (ja) * 2009-03-02 2010-09-16 Mitsubishi Electric Corp 半導体発光素子及びその製造方法
US10108079B2 (en) * 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
JP2011029612A (ja) * 2009-06-24 2011-02-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2010056583A (ja) * 2009-12-10 2010-03-11 Sanyo Electric Co Ltd 半導体レーザ素子
DE102010015197A1 (de) 2010-04-16 2012-01-19 Osram Opto Semiconductors Gmbh Laserlichtquelle
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
JP5707772B2 (ja) * 2010-08-06 2015-04-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP4971508B1 (ja) * 2011-01-21 2012-07-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US9343871B1 (en) * 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
DE102012106943B4 (de) * 2012-07-30 2019-06-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiode
DE102012215265B4 (de) * 2012-08-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer laserdiode, halterung und laserdiode
CN103545714B (zh) * 2013-10-20 2016-04-06 北京工业大学 一种具有新型近腔面电流非注入区结构的半导体激光器及制造方法
JP6737158B2 (ja) * 2016-12-08 2020-08-05 住友電気工業株式会社 量子カスケード半導体レーザ
JP2018098263A (ja) * 2016-12-08 2018-06-21 住友電気工業株式会社 量子カスケード半導体レーザ
JP7420065B2 (ja) * 2018-03-15 2024-01-23 大日本印刷株式会社 大型フォトマスク
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
TWI667503B (zh) 2019-03-06 2019-08-01 國立中山大學 光波導結構及其製作方法
DE102019109586A1 (de) * 2019-04-11 2020-10-15 Osram Opto Semiconductors Gmbh Elektronisches bauelement und verfahren zur montage eines elektronischen bauelements
DE102019115597A1 (de) * 2019-06-07 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung und optoelektronisches Strahlumlenkelement für eine Halbleiterlaservorrichtung
TWI703784B (zh) * 2019-12-31 2020-09-01 華星光通科技股份有限公司 不連續脊狀結構之半導體雷射元件的製造方法
US20210313760A1 (en) * 2020-04-06 2021-10-07 Asahi Kasei Kabushiki Kaisha Method for manufacturing semiconductor laser diode and semiconductor laser diode

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298216B (de) * 1965-06-30 1969-06-26 Siemens Ag Laser-Diode
JPS5414183A (en) * 1977-07-05 1979-02-02 Sharp Corp Semiconductor laser element and its manufacture
US4321300A (en) * 1980-11-12 1982-03-23 Engelhard Minerals & Chemicals Corp. Thin film solar energy collector
JPS64785A (en) 1986-07-29 1989-01-05 Ricoh Co Ltd Manufacture of mask semiconductor laser
JPS6425494U (de) * 1987-08-05 1989-02-13
JPH02199889A (ja) 1989-01-30 1990-08-08 Toshiba Corp 半導体レーザ装置及びその製造方法
JP2680917B2 (ja) * 1990-08-01 1997-11-19 シャープ株式会社 半導体レーザ素子の製造方法
JPH06196813A (ja) * 1992-10-14 1994-07-15 Sony Corp 半導体レーザとその製法
US5659568A (en) * 1995-05-23 1997-08-19 Hewlett-Packard Company Low noise surface emitting laser for multimode optical link applications
US5625617A (en) * 1995-09-06 1997-04-29 Lucent Technologies Inc. Near-field optical apparatus with a laser having a non-uniform emission face
JPH09199039A (ja) * 1996-01-11 1997-07-31 Hitachi Ltd ガス放電型表示パネル及びその製造方法
KR100251348B1 (ko) * 1996-12-30 2000-05-01 김영환 Rwg 레이저 다이오드 및 그 제조 방법
JP3255224B2 (ja) 1997-05-28 2002-02-12 日亜化学工業株式会社 窒化ガリウム系化合物半導体素子及びその製造方法
KR100243417B1 (ko) * 1997-09-29 2000-02-01 이계철 알더블유지 구조의 고출력 반도체 레이저
JP3604278B2 (ja) * 1998-02-17 2004-12-22 日亜化学工業株式会社 窒化物半導体レーザー素子
JP3456938B2 (ja) * 1999-02-17 2003-10-14 松下電器産業株式会社 半導体レーザ装置、光ディスク装置及び光集積化装置
WO2000052796A1 (fr) * 1999-03-04 2000-09-08 Nichia Corporation Element de laser semiconducteur au nitrure
JP3329764B2 (ja) * 1999-05-13 2002-09-30 日本電気株式会社 半導体レーザー及び半導体光増幅器
JP4160226B2 (ja) * 1999-12-28 2008-10-01 株式会社東芝 半導体レーザ装置
JP3339488B2 (ja) * 2000-02-25 2002-10-28 日本電気株式会社 光半導体装置およびその製造方法
US6700912B2 (en) * 2000-02-28 2004-03-02 Fuji Photo Film Co., Ltd. High-output semiconductor laser element, high-output semiconductor laser apparatus and method of manufacturing the same
JP2001250251A (ja) * 2000-03-01 2001-09-14 Fuji Xerox Co Ltd 半導体レーザ、光ヘッド、光ディスク装置、および半導体レーザの製造方法
WO2002006866A2 (en) * 2000-07-14 2002-01-24 Massachusetts Institute Of Technology Slab-coupled optical waveguide laser and amplifier
JP4786024B2 (ja) * 2000-11-20 2011-10-05 三菱電機株式会社 分布帰還型レーザおよびその製造方法
JP2002164608A (ja) * 2000-11-27 2002-06-07 Mitsubishi Electric Corp 光半導体装置およびその製造方法
JP4370911B2 (ja) * 2001-05-31 2009-11-25 日亜化学工業株式会社 半導体レーザ素子
JP4015865B2 (ja) * 2002-03-22 2007-11-28 松下電器産業株式会社 半導体装置の製造方法
US6724795B2 (en) * 2002-05-10 2004-04-20 Bookham Technology, Plc Semiconductor laser
EP1450414A3 (de) * 2003-02-19 2008-12-24 Nichia Corporation Halbleitervorrichtung aus einer Nitridverbindung
JP4696522B2 (ja) * 2003-10-14 2011-06-08 日亜化学工業株式会社 半導体レーザ素子

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US7103082B2 (en) 2006-09-05
EP1406360A1 (de) 2004-04-07
KR20040003020A (ko) 2004-01-07
MY132031A (en) 2007-09-28
US7796663B2 (en) 2010-09-14
WO2002101894A1 (fr) 2002-12-19
US20060262823A1 (en) 2006-11-23
EP1406360A4 (de) 2006-05-03
CN1233077C (zh) 2005-12-21
TW557618B (en) 2003-10-11
CA2449047A1 (en) 2002-12-19
JPWO2002101894A1 (ja) 2004-09-30
DE60238195D1 (de) 2010-12-16
KR100778909B1 (ko) 2007-11-22
CN1513222A (zh) 2004-07-14
US20040165635A1 (en) 2004-08-26
CA2449047C (en) 2012-01-31
EP1406360B1 (de) 2010-11-03
JP4370911B2 (ja) 2009-11-25

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