FR2785045B1 - Integration monolithique d'un systeme de detection pour la microscopie en champ proche base sur la reinjection optique dans un laser a cavite verticale emettant par la surface - Google Patents

Integration monolithique d'un systeme de detection pour la microscopie en champ proche base sur la reinjection optique dans un laser a cavite verticale emettant par la surface

Info

Publication number
FR2785045B1
FR2785045B1 FR9813333A FR9813333A FR2785045B1 FR 2785045 B1 FR2785045 B1 FR 2785045B1 FR 9813333 A FR9813333 A FR 9813333A FR 9813333 A FR9813333 A FR 9813333A FR 2785045 B1 FR2785045 B1 FR 2785045B1
Authority
FR
France
Prior art keywords
reinjection
optical
detection system
surface emitting
vertical cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9813333A
Other languages
English (en)
Other versions
FR2785045A1 (fr
Inventor
Christophe Gorecki
Yasuhiko Arakawa
Sabry Khalil Khalfallah
Hideki Kawakatsu
Jean Podleki
Dominique Bouchon
Michel Spajer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR9813333A priority Critical patent/FR2785045B1/fr
Priority to PCT/FR1999/002580 priority patent/WO2000025165A1/fr
Publication of FR2785045A1 publication Critical patent/FR2785045A1/fr
Application granted granted Critical
Publication of FR2785045B1 publication Critical patent/FR2785045B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/18—SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
    • G01Q60/22—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/02—Monitoring the movement or position of the probe by optical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/04—Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
FR9813333A 1998-10-23 1998-10-23 Integration monolithique d'un systeme de detection pour la microscopie en champ proche base sur la reinjection optique dans un laser a cavite verticale emettant par la surface Expired - Fee Related FR2785045B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9813333A FR2785045B1 (fr) 1998-10-23 1998-10-23 Integration monolithique d'un systeme de detection pour la microscopie en champ proche base sur la reinjection optique dans un laser a cavite verticale emettant par la surface
PCT/FR1999/002580 WO2000025165A1 (fr) 1998-10-23 1999-10-22 Integration monolithique d'un systeme de detection pour la microscopie en champ proche base sur la reinjection optique dans un laser a cavite verticale emettant par la surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9813333A FR2785045B1 (fr) 1998-10-23 1998-10-23 Integration monolithique d'un systeme de detection pour la microscopie en champ proche base sur la reinjection optique dans un laser a cavite verticale emettant par la surface

Publications (2)

Publication Number Publication Date
FR2785045A1 FR2785045A1 (fr) 2000-04-28
FR2785045B1 true FR2785045B1 (fr) 2001-01-19

Family

ID=9531933

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9813333A Expired - Fee Related FR2785045B1 (fr) 1998-10-23 1998-10-23 Integration monolithique d'un systeme de detection pour la microscopie en champ proche base sur la reinjection optique dans un laser a cavite verticale emettant par la surface

Country Status (2)

Country Link
FR (1) FR2785045B1 (fr)
WO (1) WO2000025165A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6987259B2 (en) 2002-05-30 2006-01-17 Dmetrix, Inc. Imaging system with an integrated source and detector array
FR2849215B1 (fr) * 2002-12-20 2005-03-11 Mauna Kea Technologies Systeme de microscopie laser confocale parallele basee sur la technologie vcsel
FR2920538B1 (fr) 2007-09-04 2009-11-20 Centre Nat Rech Scient Dispositif de detection heterodyne pour l'imagerie d'un objet par retroinjection
FR2942046B1 (fr) 2009-02-12 2011-03-11 Centre Nat Rech Scient Systeme et equipement de detection optique de particules a eventail de decouplage de l'information optique, procede de fabrication correspondant

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331658A (en) * 1992-08-26 1994-07-19 Motorola, Inc. Vertical cavity surface emitting laser and sensor
US5625617A (en) * 1995-09-06 1997-04-29 Lucent Technologies Inc. Near-field optical apparatus with a laser having a non-uniform emission face
US5742630A (en) * 1996-07-01 1998-04-21 Motorola, Inc. VCSEL with integrated pin diode
JPH10293134A (ja) * 1997-02-19 1998-11-04 Canon Inc 光検出または照射用のプローブ、及び該プローブを備えた近視野光学顕微鏡・記録再生装置・露光装置、並びに該プローブの製造方法

Also Published As

Publication number Publication date
WO2000025165A1 (fr) 2000-05-04
FR2785045A1 (fr) 2000-04-28
WO2000025165A8 (fr) 2000-06-15

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