DE69906177D1 - Laserdioden-Modul - Google Patents
Laserdioden-ModulInfo
- Publication number
- DE69906177D1 DE69906177D1 DE69906177T DE69906177T DE69906177D1 DE 69906177 D1 DE69906177 D1 DE 69906177D1 DE 69906177 T DE69906177 T DE 69906177T DE 69906177 T DE69906177 T DE 69906177T DE 69906177 D1 DE69906177 D1 DE 69906177D1
- Authority
- DE
- Germany
- Prior art keywords
- laser diode
- diode module
- module
- laser
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/02365—Fixing laser chips on mounts by clamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/070,859 US5913108A (en) | 1998-04-30 | 1998-04-30 | Laser diode packaging |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69906177D1 true DE69906177D1 (de) | 2003-04-30 |
DE69906177T2 DE69906177T2 (de) | 2003-09-25 |
Family
ID=22097815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69906177T Expired - Lifetime DE69906177T2 (de) | 1998-04-30 | 1999-04-28 | Laserdioden-Modul |
Country Status (5)
Country | Link |
---|---|
US (2) | US5913108A (de) |
EP (1) | EP0954069B1 (de) |
JP (1) | JPH11340581A (de) |
DE (1) | DE69906177T2 (de) |
IL (1) | IL129588A (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6173883B1 (en) * | 1998-11-17 | 2001-01-16 | Motorola, Inc. | Method and apparatus for increasing heat transfer that is restricted in thermally isolated pockets of a medium |
US6268653B1 (en) * | 1999-03-04 | 2001-07-31 | Opto Power Corporation | Semiconductor laser diode multi-chip module |
US6868099B1 (en) | 1999-11-04 | 2005-03-15 | Wisconsin Alumni Research Foundation | Frequency-narrowed high power diode laser system with external cavity |
US6674775B1 (en) | 2000-02-18 | 2004-01-06 | Jds Uniphase Corporation | Contact structure for semiconductor lasers |
US20040120371A1 (en) * | 2000-02-18 | 2004-06-24 | Jds Uniphase Corporation | Contact structure for a semiconductor component |
US6584133B1 (en) | 2000-11-03 | 2003-06-24 | Wisconsin Alumni Research Foundation | Frequency-narrowed high power diode laser array method and system |
GB2373636B (en) * | 2000-11-29 | 2004-09-08 | Mitsubishi Chem Corp | Semiconductor light emitting device with two heat sinks in contact with each other |
US20020110165A1 (en) * | 2001-02-14 | 2002-08-15 | Filgas David M. | Method and system for cooling at least one laser diode with a cooling fluid |
US6738399B1 (en) * | 2001-05-17 | 2004-05-18 | The United States Of America As Represented By The United States Department Of Energy | Microchannel cooled edge cladding to establish an adiabatic boundary condition in a slab laser |
US6700913B2 (en) | 2001-05-29 | 2004-03-02 | Northrop Grumman Corporation | Low cost high integrity diode laser array |
US6822994B2 (en) | 2001-06-07 | 2004-11-23 | Northrop Grumman Corporation | Solid-state laser using ytterbium-YAG composite medium |
SE0103121D0 (sv) * | 2001-09-19 | 2001-09-19 | Optillion Ab | Cooling of optical modules |
US6773963B2 (en) * | 2002-01-16 | 2004-08-10 | Intel Corporation | Apparatus and method for containing excess thermal interface material |
US7120178B2 (en) * | 2002-06-15 | 2006-10-10 | Intel Corporation | Chip carrier apparatus and method |
US6728275B2 (en) | 2002-09-19 | 2004-04-27 | Trw Inc. | Fault tolerant laser diode package |
US7170919B2 (en) * | 2003-06-23 | 2007-01-30 | Northrop Grumman Corporation | Diode-pumped solid-state laser gain module |
US7527090B2 (en) * | 2003-06-30 | 2009-05-05 | Intel Corporation | Heat dissipating device with preselected designed interface for thermal interface materials |
US7495848B2 (en) * | 2003-07-24 | 2009-02-24 | Northrop Grumman Corporation | Cast laser optical bench |
US7115987B2 (en) * | 2003-12-31 | 2006-10-03 | Intel Corporation | Integrated stacked microchannel heat exchanger and heat spreader |
JP4536404B2 (ja) * | 2004-03-19 | 2010-09-01 | 浜松ホトニクス株式会社 | レーザアレイユニット |
US7305016B2 (en) * | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
US7529286B2 (en) * | 2005-12-09 | 2009-05-05 | D-Diode Llc | Scalable thermally efficient pump diode systems |
US7949022B2 (en) * | 2006-04-27 | 2011-05-24 | Lockheed Martin Corporation | Diode pumping of a laser gain medium |
US7460566B2 (en) * | 2006-05-02 | 2008-12-02 | Northrop Grumman Corporation | Laser power reduction without mode change |
US7515346B2 (en) * | 2006-07-18 | 2009-04-07 | Coherent, Inc. | High power and high brightness diode-laser array for material processing applications |
US7656915B2 (en) * | 2006-07-26 | 2010-02-02 | Northrop Grumman Space & Missions Systems Corp. | Microchannel cooler for high efficiency laser diode heat extraction |
US7864825B2 (en) * | 2006-08-10 | 2011-01-04 | Lasertel, Inc. | Method and system for a laser diode bar array assembly |
US20080056314A1 (en) * | 2006-08-31 | 2008-03-06 | Northrop Grumman Corporation | High-power laser-diode package system |
US20100049180A1 (en) * | 2007-10-19 | 2010-02-25 | Lockheed Martin Corporation | System and method for conditioning animal tissue using laser light |
US7586958B2 (en) | 2006-09-29 | 2009-09-08 | Northrop Grumman Corporation | Electro-opto switching of unpolarized lasers |
EP2102949B1 (de) * | 2006-12-12 | 2011-08-10 | D-Diode LLC | Skalierbare thermisch effiziente pumpdiodensysteme |
US8202268B1 (en) | 2007-03-18 | 2012-06-19 | Lockheed Martin Corporation | Method and multiple-mode device for high-power short-pulse laser ablation and CW cauterization of bodily tissues |
US8112243B2 (en) * | 2007-06-20 | 2012-02-07 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Forward voltage short-pulse technique for measuring high power laser array junction temperture |
US7724791B2 (en) * | 2008-01-18 | 2010-05-25 | Northrop Grumman Systems Corporation | Method of manufacturing laser diode packages and arrays |
US8964805B2 (en) | 2009-03-12 | 2015-02-24 | Futurewei Technologies, Inc. | Thermally optimized mechanical interface for hybrid integrated wavelength division multiplexed arrayed transmitter |
US8345720B2 (en) * | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
DE102011009018A1 (de) | 2011-01-20 | 2012-08-09 | Betewis GmbH | Klemmtechnik für horizontale Montage von Laser-Dioden-Barren |
US8787414B1 (en) | 2011-09-07 | 2014-07-22 | Science Research Laboratory, Inc. | Methods and systems for providing a low stress electrode connection |
US8518814B2 (en) | 2011-12-02 | 2013-08-27 | Northrop Grumman Systems Corporation | Methods of fabrication of high-density laser diode stacks |
CN102570291B (zh) * | 2011-12-20 | 2014-10-08 | 西安炬光科技有限公司 | 一种传导制冷型高功率半导体激光器及其制备方法 |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
CN103457151B (zh) * | 2013-08-08 | 2016-01-20 | 中国科学院苏州生物医学工程技术研究所 | 一种高温硬焊料准连续半导体激光器巴条叠阵封装方法 |
CN104368891B (zh) * | 2013-08-16 | 2016-08-10 | 东方强光(北京)科技有限公司 | 一种激光巴条单元叠层烧结的夹具 |
US9054482B1 (en) | 2014-05-07 | 2015-06-09 | Jiang Li | Laser diode stack assembly and method of manufacturing |
CN104409964B (zh) * | 2014-12-03 | 2018-02-09 | 山东华光光电子股份有限公司 | 一种半导体激光器烧结夹具及其烧结方法 |
US9883612B2 (en) | 2015-06-02 | 2018-01-30 | International Business Machines Corporation | Heat sink attachment on existing heat sinks |
CN105790063B (zh) * | 2016-03-22 | 2019-01-08 | 西安炬光科技股份有限公司 | 一种应用于半导体激光器的衬底 |
US11025031B2 (en) | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
EP3665727A4 (de) * | 2018-04-28 | 2020-07-22 | SZ DJI Technology Co., Ltd. | Lichtdetektions- und entfernungssensoren mit mehreren emittern und mehreren empfängern sowie zugehörige systeme und verfahren |
DE102018210135B4 (de) * | 2018-06-21 | 2023-06-29 | Trumpf Photonics, Inc. | Diodenlaseranordnung und Verfahren zur Montage einer Diodenlaseranordnung |
WO2020036998A1 (en) | 2018-08-13 | 2020-02-20 | Lasertel, Inc. | Use of metal-core printed circuit board (pcb) for generation of ultra-narrow, high-current pulse driver |
US11056854B2 (en) | 2018-08-14 | 2021-07-06 | Leonardo Electronics Us Inc. | Laser assembly and related methods |
US11296481B2 (en) | 2019-01-09 | 2022-04-05 | Leonardo Electronics Us Inc. | Divergence reshaping array |
JP6608104B1 (ja) * | 2019-03-14 | 2019-11-20 | 三菱電機株式会社 | レーザ装置およびレーザ加工機 |
US11752571B1 (en) | 2019-06-07 | 2023-09-12 | Leonardo Electronics Us Inc. | Coherent beam coupler |
JP7329775B2 (ja) * | 2019-12-23 | 2023-08-21 | パナソニックIpマネジメント株式会社 | レーザ装置の製造方法及びフィンブロックの製造方法 |
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-
1998
- 1998-04-30 US US09/070,859 patent/US5913108A/en not_active Expired - Lifetime
-
1999
- 1999-04-05 US US09/286,706 patent/US6310900B1/en not_active Expired - Lifetime
- 1999-04-26 IL IL12958899A patent/IL129588A/xx not_active IP Right Cessation
- 1999-04-28 EP EP99108332A patent/EP0954069B1/de not_active Expired - Lifetime
- 1999-04-28 DE DE69906177T patent/DE69906177T2/de not_active Expired - Lifetime
- 1999-04-30 JP JP11125243A patent/JPH11340581A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0954069B1 (de) | 2003-03-26 |
DE69906177T2 (de) | 2003-09-25 |
US5913108A (en) | 1999-06-15 |
JPH11340581A (ja) | 1999-12-10 |
US6310900B1 (en) | 2001-10-30 |
EP0954069A2 (de) | 1999-11-03 |
EP0954069A3 (de) | 2000-02-09 |
IL129588A (en) | 2003-05-29 |
IL129588A0 (en) | 2000-02-29 |
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