JP3844915B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3844915B2
JP3844915B2 JP18416299A JP18416299A JP3844915B2 JP 3844915 B2 JP3844915 B2 JP 3844915B2 JP 18416299 A JP18416299 A JP 18416299A JP 18416299 A JP18416299 A JP 18416299A JP 3844915 B2 JP3844915 B2 JP 3844915B2
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JP
Japan
Prior art keywords
output
circuit
pad
test
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18416299A
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English (en)
Japanese (ja)
Other versions
JP2001015687A5 (https=
JP2001015687A (ja
Inventor
靖 亀田
真 瀬川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18416299A priority Critical patent/JP3844915B2/ja
Priority to KR1020000035882A priority patent/KR100343914B1/ko
Priority to US09/604,720 priority patent/US6442009B1/en
Publication of JP2001015687A publication Critical patent/JP2001015687A/ja
Publication of JP2001015687A5 publication Critical patent/JP2001015687A5/ja
Application granted granted Critical
Publication of JP3844915B2 publication Critical patent/JP3844915B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP18416299A 1999-06-29 1999-06-29 半導体装置 Expired - Fee Related JP3844915B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18416299A JP3844915B2 (ja) 1999-06-29 1999-06-29 半導体装置
KR1020000035882A KR100343914B1 (ko) 1999-06-29 2000-06-28 반도체 장치
US09/604,720 US6442009B1 (en) 1999-06-29 2000-06-28 Semiconductor device having protective and test circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18416299A JP3844915B2 (ja) 1999-06-29 1999-06-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2001015687A JP2001015687A (ja) 2001-01-19
JP2001015687A5 JP2001015687A5 (https=) 2005-05-19
JP3844915B2 true JP3844915B2 (ja) 2006-11-15

Family

ID=16148457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18416299A Expired - Fee Related JP3844915B2 (ja) 1999-06-29 1999-06-29 半導体装置

Country Status (3)

Country Link
US (1) US6442009B1 (https=)
JP (1) JP3844915B2 (https=)
KR (1) KR100343914B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688480B1 (ko) * 2000-09-19 2007-03-08 삼성전자주식회사 패키지 상태에서의 반도체 소자의 전기적 특성 측정 수단및 그 방법
KR100476699B1 (ko) * 2000-12-29 2005-03-17 주식회사 하이닉스반도체 정전기 방전 보호 회로 및 그 제조 방법
US20040190208A1 (en) * 2003-03-26 2004-09-30 Maxim Levit Electrostatic discharge protection and methods thereof
JP4031423B2 (ja) * 2003-10-29 2008-01-09 株式会社東芝 半導体集積回路
JP2005156703A (ja) * 2003-11-21 2005-06-16 Seiko Epson Corp 電子装置の静電保護回路、電気光学装置の静電保護回路及び電子機器
KR100648260B1 (ko) * 2004-08-09 2006-11-23 삼성전자주식회사 자기 차폐 기능을 갖는 반도체 웨이퍼 및 그것의 테스트방법
US7005858B1 (en) * 2004-09-23 2006-02-28 Hitachi Global Storage Technologies Netherlands, B.V. System and method for decreasing ESD damage during component level long term testing
DE102010050764B4 (de) * 2010-11-10 2012-10-25 Telefunken Semiconductors Gmbh & Co. Kg ESD-Schutzschaltung
KR101239102B1 (ko) * 2011-02-16 2013-03-06 주식회사 동부하이텍 Ｅｓｄ보호 회로
DE102019121271A1 (de) 2018-08-30 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. ESD-Schutzschaltung, Halbleitersystem, das diese aufweist, und Verfahren zum Betreiben derselben
US11043487B2 (en) * 2018-08-30 2021-06-22 Taiwan Semiconductor Manufacturing Company Ltd. ESD protection circuit, semiconductor system including same, and method for operating same
US11158367B1 (en) 2020-04-10 2021-10-26 Micron Technology, Inc. Semiconductor device protection circuits for protecting a semiconductor device during processing thereof, and associated methods, devices, and systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753191B2 (ja) 1992-10-05 1998-05-18 松下電器産業株式会社 半導体装置
US5617283A (en) * 1994-07-01 1997-04-01 Digital Equipment Corporation Self-referencing modulation circuit for CMOS integrated circuit electrostatic discharge protection clamps
US5930094A (en) * 1997-08-29 1999-07-27 Texas Instruments Incorporated Cascoded-MOS ESD protection circuits for mixed voltage chips

Also Published As

Publication number Publication date
JP2001015687A (ja) 2001-01-19
KR100343914B1 (ko) 2002-07-20
KR20010029848A (ko) 2001-04-16
US6442009B1 (en) 2002-08-27

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