KR100343914B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100343914B1
KR100343914B1 KR1020000035882A KR20000035882A KR100343914B1 KR 100343914 B1 KR100343914 B1 KR 100343914B1 KR 1020000035882 A KR1020000035882 A KR 1020000035882A KR 20000035882 A KR20000035882 A KR 20000035882A KR 100343914 B1 KR100343914 B1 KR 100343914B1
Authority
KR
South Korea
Prior art keywords
gate
semiconductor device
test circuit
circuit
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000035882A
Other languages
English (en)
Korean (ko)
Other versions
KR20010029848A (ko
Inventor
가메다야스시
세가와마꼬또
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20010029848A publication Critical patent/KR20010029848A/ko
Application granted granted Critical
Publication of KR100343914B1 publication Critical patent/KR100343914B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020000035882A 1999-06-29 2000-06-28 반도체 장치 Expired - Fee Related KR100343914B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-184162 1999-06-29
JP18416299A JP3844915B2 (ja) 1999-06-29 1999-06-29 半導体装置

Publications (2)

Publication Number Publication Date
KR20010029848A KR20010029848A (ko) 2001-04-16
KR100343914B1 true KR100343914B1 (ko) 2002-07-20

Family

ID=16148457

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000035882A Expired - Fee Related KR100343914B1 (ko) 1999-06-29 2000-06-28 반도체 장치

Country Status (3)

Country Link
US (1) US6442009B1 (https=)
JP (1) JP3844915B2 (https=)
KR (1) KR100343914B1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11043487B2 (en) 2018-08-30 2021-06-22 Taiwan Semiconductor Manufacturing Company Ltd. ESD protection circuit, semiconductor system including same, and method for operating same
US12369408B2 (en) 2018-08-30 2025-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection circuit, semiconductor system including same, and method for operating same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688480B1 (ko) * 2000-09-19 2007-03-08 삼성전자주식회사 패키지 상태에서의 반도체 소자의 전기적 특성 측정 수단및 그 방법
KR100476699B1 (ko) * 2000-12-29 2005-03-17 주식회사 하이닉스반도체 정전기 방전 보호 회로 및 그 제조 방법
US20040190208A1 (en) * 2003-03-26 2004-09-30 Maxim Levit Electrostatic discharge protection and methods thereof
JP4031423B2 (ja) * 2003-10-29 2008-01-09 株式会社東芝 半導体集積回路
JP2005156703A (ja) * 2003-11-21 2005-06-16 Seiko Epson Corp 電子装置の静電保護回路、電気光学装置の静電保護回路及び電子機器
KR100648260B1 (ko) * 2004-08-09 2006-11-23 삼성전자주식회사 자기 차폐 기능을 갖는 반도체 웨이퍼 및 그것의 테스트방법
US7005858B1 (en) * 2004-09-23 2006-02-28 Hitachi Global Storage Technologies Netherlands, B.V. System and method for decreasing ESD damage during component level long term testing
DE102010050764B4 (de) * 2010-11-10 2012-10-25 Telefunken Semiconductors Gmbh & Co. Kg ESD-Schutzschaltung
KR101239102B1 (ko) * 2011-02-16 2013-03-06 주식회사 동부하이텍 Ｅｓｄ보호 회로
US11158367B1 (en) 2020-04-10 2021-10-26 Micron Technology, Inc. Semiconductor device protection circuits for protecting a semiconductor device during processing thereof, and associated methods, devices, and systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753191B2 (ja) 1992-10-05 1998-05-18 松下電器産業株式会社 半導体装置
US5617283A (en) * 1994-07-01 1997-04-01 Digital Equipment Corporation Self-referencing modulation circuit for CMOS integrated circuit electrostatic discharge protection clamps
US5930094A (en) * 1997-08-29 1999-07-27 Texas Instruments Incorporated Cascoded-MOS ESD protection circuits for mixed voltage chips

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11043487B2 (en) 2018-08-30 2021-06-22 Taiwan Semiconductor Manufacturing Company Ltd. ESD protection circuit, semiconductor system including same, and method for operating same
US11791329B2 (en) 2018-08-30 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection circuit, semiconductor system including same, and method for operating same
US12369408B2 (en) 2018-08-30 2025-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection circuit, semiconductor system including same, and method for operating same

Also Published As

Publication number Publication date
JP2001015687A (ja) 2001-01-19
JP3844915B2 (ja) 2006-11-15
KR20010029848A (ko) 2001-04-16
US6442009B1 (en) 2002-08-27

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