JP2001015687A5 - - Google Patents

Download PDF

Info

Publication number
JP2001015687A5
JP2001015687A5 JP1999184162A JP18416299A JP2001015687A5 JP 2001015687 A5 JP2001015687 A5 JP 2001015687A5 JP 1999184162 A JP1999184162 A JP 1999184162A JP 18416299 A JP18416299 A JP 18416299A JP 2001015687 A5 JP2001015687 A5 JP 2001015687A5
Authority
JP
Japan
Prior art keywords
circuit
semiconductor device
signal
output
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999184162A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001015687A (ja
JP3844915B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18416299A priority Critical patent/JP3844915B2/ja
Priority claimed from JP18416299A external-priority patent/JP3844915B2/ja
Priority to KR1020000035882A priority patent/KR100343914B1/ko
Priority to US09/604,720 priority patent/US6442009B1/en
Publication of JP2001015687A publication Critical patent/JP2001015687A/ja
Publication of JP2001015687A5 publication Critical patent/JP2001015687A5/ja
Application granted granted Critical
Publication of JP3844915B2 publication Critical patent/JP3844915B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP18416299A 1999-06-29 1999-06-29 半導体装置 Expired - Fee Related JP3844915B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18416299A JP3844915B2 (ja) 1999-06-29 1999-06-29 半導体装置
KR1020000035882A KR100343914B1 (ko) 1999-06-29 2000-06-28 반도체 장치
US09/604,720 US6442009B1 (en) 1999-06-29 2000-06-28 Semiconductor device having protective and test circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18416299A JP3844915B2 (ja) 1999-06-29 1999-06-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2001015687A JP2001015687A (ja) 2001-01-19
JP2001015687A5 true JP2001015687A5 (https=) 2005-05-19
JP3844915B2 JP3844915B2 (ja) 2006-11-15

Family

ID=16148457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18416299A Expired - Fee Related JP3844915B2 (ja) 1999-06-29 1999-06-29 半導体装置

Country Status (3)

Country Link
US (1) US6442009B1 (https=)
JP (1) JP3844915B2 (https=)
KR (1) KR100343914B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688480B1 (ko) * 2000-09-19 2007-03-08 삼성전자주식회사 패키지 상태에서의 반도체 소자의 전기적 특성 측정 수단및 그 방법
KR100476699B1 (ko) * 2000-12-29 2005-03-17 주식회사 하이닉스반도체 정전기 방전 보호 회로 및 그 제조 방법
US20040190208A1 (en) * 2003-03-26 2004-09-30 Maxim Levit Electrostatic discharge protection and methods thereof
JP4031423B2 (ja) * 2003-10-29 2008-01-09 株式会社東芝 半導体集積回路
JP2005156703A (ja) * 2003-11-21 2005-06-16 Seiko Epson Corp 電子装置の静電保護回路、電気光学装置の静電保護回路及び電子機器
KR100648260B1 (ko) * 2004-08-09 2006-11-23 삼성전자주식회사 자기 차폐 기능을 갖는 반도체 웨이퍼 및 그것의 테스트방법
US7005858B1 (en) * 2004-09-23 2006-02-28 Hitachi Global Storage Technologies Netherlands, B.V. System and method for decreasing ESD damage during component level long term testing
DE102010050764B4 (de) * 2010-11-10 2012-10-25 Telefunken Semiconductors Gmbh & Co. Kg ESD-Schutzschaltung
KR101239102B1 (ko) * 2011-02-16 2013-03-06 주식회사 동부하이텍 Ｅｓｄ보호 회로
DE102019121271A1 (de) 2018-08-30 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. ESD-Schutzschaltung, Halbleitersystem, das diese aufweist, und Verfahren zum Betreiben derselben
US11043487B2 (en) * 2018-08-30 2021-06-22 Taiwan Semiconductor Manufacturing Company Ltd. ESD protection circuit, semiconductor system including same, and method for operating same
US11158367B1 (en) 2020-04-10 2021-10-26 Micron Technology, Inc. Semiconductor device protection circuits for protecting a semiconductor device during processing thereof, and associated methods, devices, and systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753191B2 (ja) 1992-10-05 1998-05-18 松下電器産業株式会社 半導体装置
US5617283A (en) * 1994-07-01 1997-04-01 Digital Equipment Corporation Self-referencing modulation circuit for CMOS integrated circuit electrostatic discharge protection clamps
US5930094A (en) * 1997-08-29 1999-07-27 Texas Instruments Incorporated Cascoded-MOS ESD protection circuits for mixed voltage chips

Similar Documents

Publication Publication Date Title
KR930005187A (ko) 전기적으로 프로그램 할 수 있는 내부 전원 발생 회로
JPH11162194A5 (https=)
JP2001015687A5 (https=)
KR100343914B1 (ko) 반도체 장치
KR960038997A (ko) 반도체 메모리장치의 전류센스앰프회로
JP2003036674A5 (https=)
KR910015057A (ko) 반도체집적회로
US6563353B2 (en) Circuit to eliminate bus contention at chip power up
KR100224764B1 (ko) 로우 어드레스 스트로우브신호 입력버퍼
JPH029092A (ja) プログラミング実施回路
US7876628B2 (en) Data output circuit
KR970003257A (ko) 반도체 메모리 장치
US6816417B2 (en) Input/output buffer circuit
JPH08233914A (ja) マイクロコントローラのテスト回路
JP3604660B2 (ja) 内部給電電圧を備えた回路装置
KR200291192Y1 (ko) 반도체장치의 저전력 인버터회로
US6211700B1 (en) Data transfer device with a post charge logic
KR970029799A (ko) 반도체 기억장치의 파워라인 커플링 방지 회로
JP2626165B2 (ja) 半導体装置のリセット回路
JPH0492292A (ja) 半導体集積記憶回路装置
KR100505574B1 (ko) 내부 선택 사양의 확인이 가능한 반도체 장치
JP2608368B2 (ja) 電子装置
KR20060005488A (ko) 입/출력 패드 장치
JP2004282660A (ja) 半導体集積回路
KR20000007310A (ko) 반도체 메모리 장치의 입/출력 회로