JP3839323B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3839323B2
JP3839323B2 JP2002012775A JP2002012775A JP3839323B2 JP 3839323 B2 JP3839323 B2 JP 3839323B2 JP 2002012775 A JP2002012775 A JP 2002012775A JP 2002012775 A JP2002012775 A JP 2002012775A JP 3839323 B2 JP3839323 B2 JP 3839323B2
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semiconductor chip
chip
semiconductor
back surface
main surface
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Expired - Fee Related
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JP2002012775A
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English (en)
Japanese (ja)
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JP2002368190A5 (https=
JP2002368190A (ja
Inventor
滋 中村
正克 後藤
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2002012775A priority Critical patent/JP3839323B2/ja
Priority to US10/086,717 priority patent/US6951774B2/en
Priority to TW091103953A priority patent/TWI286806B/zh
Priority to KR1020020012170A priority patent/KR100818423B1/ko
Publication of JP2002368190A publication Critical patent/JP2002368190A/ja
Publication of JP2002368190A5 publication Critical patent/JP2002368190A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07521Aligning
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/537Multiple bond wires having different shapes
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • H10W72/9445Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
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    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/231Configurations of stacked chips the stacked chips being on both top and bottom sides of an auxiliary carrier having no electrical connection structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/24Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
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    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/28Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
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    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/291Configurations of stacked chips characterised by containers, encapsulations, or other housings for the stacked chips
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    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
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    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2002012775A 2001-04-06 2002-01-22 半導体装置の製造方法 Expired - Fee Related JP3839323B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002012775A JP3839323B2 (ja) 2001-04-06 2002-01-22 半導体装置の製造方法
US10/086,717 US6951774B2 (en) 2001-04-06 2002-03-04 Semiconductor device and method of manufacturing the same
TW091103953A TWI286806B (en) 2001-04-06 2002-03-04 Semiconductor device and method for manufacturing the same
KR1020020012170A KR100818423B1 (ko) 2001-04-06 2002-03-07 반도체 장치 및 그 제조 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-108603 2001-04-06
JP2001108603 2001-04-06
JP2002012775A JP3839323B2 (ja) 2001-04-06 2002-01-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002368190A JP2002368190A (ja) 2002-12-20
JP2002368190A5 JP2002368190A5 (https=) 2005-07-28
JP3839323B2 true JP3839323B2 (ja) 2006-11-01

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Country Link
US (1) US6951774B2 (https=)
JP (1) JP3839323B2 (https=)
KR (1) KR100818423B1 (https=)
TW (1) TWI286806B (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979904B2 (en) * 2002-04-19 2005-12-27 Micron Technology, Inc. Integrated circuit package having reduced interconnects
US6682955B2 (en) * 2002-05-08 2004-01-27 Micron Technology, Inc. Stacked die module and techniques for forming a stacked die module
US7045887B2 (en) * 2002-10-08 2006-05-16 Chippac, Inc. Semiconductor multi-package module having inverted second package stacked over die-up flip-chip ball grid array (BGA) package
US7034387B2 (en) 2003-04-04 2006-04-25 Chippac, Inc. Semiconductor multipackage module including processor and memory package assemblies
KR100618812B1 (ko) * 2002-11-18 2006-09-05 삼성전자주식회사 향상된 신뢰성을 가지는 적층형 멀티 칩 패키지
JP2004179442A (ja) * 2002-11-28 2004-06-24 Renesas Technology Corp マルチチップモジュール
JP3689694B2 (ja) * 2002-12-27 2005-08-31 松下電器産業株式会社 半導体装置及びその製造方法
EP1434264A3 (en) * 2002-12-27 2017-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using the transfer technique
JP3819851B2 (ja) 2003-01-29 2006-09-13 松下電器産業株式会社 半導体装置およびその製造方法
US6936929B1 (en) * 2003-03-17 2005-08-30 National Semiconductor Corporation Multichip packages with exposed dice
KR20040087501A (ko) 2003-04-08 2004-10-14 삼성전자주식회사 센터 패드 반도체 칩의 패키지 및 그 제조방법
DE602004015596D1 (de) * 2003-06-03 2008-09-18 Nxp Bv Tiefpassfilter und elektronisches bauelement
FR2857157B1 (fr) * 2003-07-01 2005-09-23 3D Plus Sa Procede d'interconnexion de composants actif et passif et composant heterogene a faible epaisseur en resultant
JP4538830B2 (ja) * 2004-03-30 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置
JP2005340761A (ja) * 2004-04-27 2005-12-08 Seiko Epson Corp 半導体装置の実装方法、回路基板、電気光学装置並びに電子機器
US7629695B2 (en) * 2004-05-20 2009-12-08 Kabushiki Kaisha Toshiba Stacked electronic component and manufacturing method thereof
US7224075B2 (en) * 2004-08-13 2007-05-29 Intel Corporation Methods and systems for attaching die in stacked-die packages
US7332801B2 (en) * 2004-09-30 2008-02-19 Intel Corporation Electronic device
US7163839B2 (en) * 2005-04-27 2007-01-16 Spansion Llc Multi-chip module and method of manufacture
US8586413B2 (en) * 2005-05-04 2013-11-19 Spansion Llc Multi-chip module having a support structure and method of manufacture
JP2007048958A (ja) * 2005-08-10 2007-02-22 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP4998268B2 (ja) * 2005-08-24 2012-08-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8410594B2 (en) * 2006-01-11 2013-04-02 Stats Chippac Ltd. Inter-stacking module system
US7750482B2 (en) * 2006-02-09 2010-07-06 Stats Chippac Ltd. Integrated circuit package system including zero fillet resin
JP4910512B2 (ja) * 2006-06-30 2012-04-04 富士通セミコンダクター株式会社 半導体装置および半導体装置の製造方法
JP2008078367A (ja) * 2006-09-21 2008-04-03 Renesas Technology Corp 半導体装置
JP2009182104A (ja) * 2008-01-30 2009-08-13 Toshiba Corp 半導体パッケージ
US8816487B2 (en) * 2008-03-18 2014-08-26 Stats Chippac Ltd. Integrated circuit packaging system with package-in-package and method of manufacture thereof
US20090278262A1 (en) * 2008-05-09 2009-11-12 Boon Keat Tan Multi-chip package including component supporting die overhang and system including same
JP5557439B2 (ja) * 2008-10-24 2014-07-23 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
KR101708272B1 (ko) * 2009-10-28 2017-02-21 삼성전자주식회사 반도체 패키지의 제조 장치 및 반도체 패키지의 제조 방법
KR20110123504A (ko) * 2010-05-07 2011-11-15 주식회사 하이닉스반도체 크기 가변형 반도체 칩 및 이를 포함하는 웨이퍼 및 이를 이용한 반도체 패키지
JP2011258757A (ja) * 2010-06-09 2011-12-22 Toshiba Corp 半導体装置
US8804344B2 (en) * 2011-06-10 2014-08-12 Scott Moncrieff Injection molded control panel with in-molded decorated plastic film
KR102387541B1 (ko) * 2015-03-25 2022-04-18 삼성전자주식회사 반도체 칩, 및 이를 포함하는 플립 칩 패키지와 웨이퍼 레벨 패키지
KR101696638B1 (ko) * 2015-06-25 2017-01-16 크루셜텍 (주) 센서 패키지 및 이의 제조방법
JP6489965B2 (ja) * 2015-07-14 2019-03-27 新光電気工業株式会社 電子部品装置及びその製造方法
KR102190568B1 (ko) * 2016-01-12 2020-12-18 앰코테크놀로지코리아(주) 핑거 프린트 센서용 반도체 패키지 및 이의 제조 방법
US9666538B1 (en) * 2016-03-10 2017-05-30 Analog Devices, Inc. Semiconductor package with barrier for radio frequency absorber
CN108387831B (zh) * 2018-06-04 2024-01-26 华北电力大学 一种3000a半导体器件的功率循环试验系统

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104343A (ja) * 1986-10-21 1988-05-09 Mitsubishi Electric Corp 半導体装置
JPS63179537A (ja) * 1987-01-21 1988-07-23 Fujitsu Ltd 半導体装置の実装方法
JPH03106622A (ja) * 1989-09-20 1991-05-07 Matsushita Electric Ind Co Ltd 半導体モールド成形方法
US5446620A (en) * 1990-08-01 1995-08-29 Staktek Corporation Ultra high density integrated circuit packages
JPH0513665A (ja) * 1991-06-28 1993-01-22 Nec Corp Tabチツプ実装方法
US5422435A (en) * 1992-05-22 1995-06-06 National Semiconductor Corporation Stacked multi-chip modules and method of manufacturing
JP3423766B2 (ja) * 1994-03-11 2003-07-07 Towa株式会社 電子部品の樹脂封止成形方法及び金型装置
JP3129928B2 (ja) * 1995-03-30 2001-01-31 シャープ株式会社 樹脂封止型半導体装置
US5817545A (en) * 1996-01-24 1998-10-06 Cornell Research Foundation, Inc. Pressurized underfill encapsulation of integrated circuits
US7166495B2 (en) * 1996-02-20 2007-01-23 Micron Technology, Inc. Method of fabricating a multi-die semiconductor package assembly
US5696031A (en) * 1996-11-20 1997-12-09 Micron Technology, Inc. Device and method for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
JP3572833B2 (ja) * 1996-12-19 2004-10-06 株式会社デンソー 樹脂封止型半導体装置の製造方法
TW337036B (en) 1997-09-19 1998-07-21 Utron Technology Inc Poly-wafer stacked package
JPH11219984A (ja) 1997-11-06 1999-08-10 Sharp Corp 半導体装置パッケージおよびその製造方法ならびにそのための回路基板
JP3512657B2 (ja) 1998-12-22 2004-03-31 シャープ株式会社 半導体装置
JP3565319B2 (ja) 1999-04-14 2004-09-15 シャープ株式会社 半導体装置及びその製造方法
JP4338834B2 (ja) * 1999-08-06 2009-10-07 日本テキサス・インスツルメンツ株式会社 超音波振動を用いた半導体チップの実装方法
US6309916B1 (en) * 1999-11-17 2001-10-30 Amkor Technology, Inc Method of molding plastic semiconductor packages
US6413801B1 (en) * 2000-05-02 2002-07-02 Advanced Semiconductor Engineering, Inc. Method of molding semiconductor device and molding die for use therein
US6632704B2 (en) * 2000-12-19 2003-10-14 Intel Corporation Molded flip chip package

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US6951774B2 (en) 2005-10-04
JP2002368190A (ja) 2002-12-20
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