JP3788041B2 - ＧａＮ単結晶基板の製造方法 - Google Patents

ＧａＮ単結晶基板の製造方法 Download PDF

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Publication number
JP3788041B2
JP3788041B2 JP18344698A JP18344698A JP3788041B2 JP 3788041 B2 JP3788041 B2 JP 3788041B2 JP 18344698 A JP18344698 A JP 18344698A JP 18344698 A JP18344698 A JP 18344698A JP 3788041 B2 JP3788041 B2 JP 3788041B2
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gan
substrate
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JP2000022212A (ja
JP2000022212A5 (https=
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健作 元木
拓司 岡久
直樹 松本
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP18344698A priority Critical patent/JP3788041B2/ja
Priority to TW088109629A priority patent/TW417315B/zh
Priority to US09/333,879 priority patent/US6413627B1/en
Priority to EP99111739A priority patent/EP0966047B1/en
Priority to DE69943012T priority patent/DE69943012D1/de
Priority to KR1019990023075A priority patent/KR100348175B1/ko
Priority to CNB991086449A priority patent/CN1196176C/zh
Publication of JP2000022212A publication Critical patent/JP2000022212A/ja
Priority to HK00103240.2A priority patent/HK1024099B/xx
Publication of JP2000022212A5 publication Critical patent/JP2000022212A5/ja
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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP18344698A 1998-06-18 1998-06-30 ＧａＮ単結晶基板の製造方法 Expired - Lifetime JP3788041B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP18344698A JP3788041B2 (ja) 1998-06-30 1998-06-30 ＧａＮ単結晶基板の製造方法
TW088109629A TW417315B (en) 1998-06-18 1999-06-09 GaN single crystal substrate and its manufacture method of the same
US09/333,879 US6413627B1 (en) 1998-06-18 1999-06-15 GaN single crystal substrate and method of producing same
DE69943012T DE69943012D1 (de) 1998-06-18 1999-06-17 GaN-Einkristallinessubstrat und Herstellungsverfahren
EP99111739A EP0966047B1 (en) 1998-06-18 1999-06-17 GaN single crystal substrate and method of producing same
KR1019990023075A KR100348175B1 (ko) 1998-06-18 1999-06-18 ＧａＮ단결정기판 및 그 제조방법
CNB991086449A CN1196176C (zh) 1998-06-18 1999-06-18 GaN单晶衬底
HK00103240.2A HK1024099B (en) 1998-06-18 2000-05-31 Gan single crystal substrate

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JP18344698A JP3788041B2 (ja) 1998-06-30 1998-06-30 ＧａＮ単結晶基板の製造方法

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JP2006029818A Division JP4288515B2 (ja) 2006-02-07 2006-02-07 ＧａＮ単結晶基板、ＧａＮ単結晶基板の製造方法、ＧａＮ単結晶基板の上に作製した発光素子及びその製造方法

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JP2000022212A5 JP2000022212A5 (https=) 2006-01-26
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Cited By (4)

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EP2055811A2 (en) 2007-10-24 2009-05-06 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
US7670856B2 (en) 2006-12-28 2010-03-02 Hitachi Cable, Ltd. Nitride semiconductor substrate and method of making same
US8110484B1 (en) 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same
US8466471B2 (en) 2007-12-22 2013-06-18 Hitachi Cable, Ltd. Nitride semiconductor free-standing substrate and method for making same

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US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
US6562644B2 (en) 2000-08-08 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
US6780239B2 (en) 2000-10-19 2004-08-24 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
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US6773504B2 (en) 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
US7001457B2 (en) 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP3801125B2 (ja) * 2001-10-09 2006-07-26 住友電気工業株式会社 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法
US7473315B2 (en) 2001-10-09 2009-01-06 Sumitomo Electric Industries, Ltd. AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate
US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP3997827B2 (ja) 2002-04-30 2007-10-24 住友電気工業株式会社 窒化ガリウム成長用基板及び窒化ガリウム成長用基板の製造方法並びに窒化ガリウム基板の製造方法
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7638815B2 (en) 2002-12-27 2009-12-29 Momentive Performance Materials Inc. Crystalline composition, wafer, and semi-conductor structure
US9279193B2 (en) 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
US7859008B2 (en) 2002-12-27 2010-12-28 Momentive Performance Materials Inc. Crystalline composition, wafer, device, and associated method
US8089097B2 (en) 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
US8357945B2 (en) 2002-12-27 2013-01-22 Momentive Performance Materials Inc. Gallium nitride crystal and method of making same
US7786503B2 (en) 2002-12-27 2010-08-31 Momentive Performance Materials Inc. Gallium nitride crystals and wafers and method of making
KR100550491B1 (ko) 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
FR2860248B1 (fr) * 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
JP4396816B2 (ja) 2003-10-17 2010-01-13 日立電線株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
US7009215B2 (en) 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
JP4380294B2 (ja) 2003-10-29 2009-12-09 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板
JP4232605B2 (ja) * 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
US7276779B2 (en) 2003-11-04 2007-10-02 Hitachi Cable, Ltd. III-V group nitride system semiconductor substrate
JP2005340747A (ja) * 2003-11-04 2005-12-08 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法、ｉｉｉ−ｖ族窒化物系半導体デバイス、ｉｉｉ−ｖ族窒化物系半導体基板のロット
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
JP2006306722A (ja) * 2004-03-17 2006-11-09 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板の製造方法及びＧａＮ単結晶基板
JP2006108435A (ja) * 2004-10-06 2006-04-20 Sumitomo Electric Ind Ltd 窒化物半導体ウエハ
JP4525309B2 (ja) * 2004-11-19 2010-08-18 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の評価方法
JP4525353B2 (ja) * 2005-01-07 2010-08-18 住友電気工業株式会社 Ｉｉｉ族窒化物基板の製造方法
KR100712753B1 (ko) * 2005-03-09 2007-04-30 주식회사 실트론 화합물 반도체 장치 및 그 제조방법
JP4780993B2 (ja) 2005-03-31 2011-09-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2006290677A (ja) * 2005-04-11 2006-10-26 Hitachi Cable Ltd 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法
JP2006290697A (ja) * 2005-04-14 2006-10-26 Hitachi Cable Ltd 窒化物半導体基板及びその製造方法
JP2007030155A (ja) * 2005-06-24 2007-02-08 Sumitomo Electric Ind Ltd 窒化物半導体結晶の加工方法
JP5374011B2 (ja) * 2005-11-28 2013-12-25 住友電気工業株式会社 窒化物半導体装置
JP2007161535A (ja) * 2005-12-14 2007-06-28 Sumitomo Electric Ind Ltd 半導体結晶基板の製造方法
JP2007161534A (ja) * 2005-12-14 2007-06-28 Sumitomo Electric Ind Ltd 窒化物半導体結晶基板の製造方法
JP4386031B2 (ja) * 2005-12-26 2009-12-16 住友電気工業株式会社 半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法
KR100727820B1 (ko) * 2006-01-25 2007-06-13 삼성코닝 주식회사 질화갈륨 단결정 기판의 표면가공 방법
JP4862442B2 (ja) 2006-03-15 2012-01-25 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法及びｉｉｉ−ｖ族窒化物系デバイスの製造方法
JP4816277B2 (ja) * 2006-06-14 2011-11-16 日立電線株式会社 窒化物半導体自立基板及び窒化物半導体発光素子
US7928447B2 (en) 2006-07-17 2011-04-19 Sumitomo Electric Industries, Ltd. GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device
US7755103B2 (en) 2006-08-03 2010-07-13 Sumitomo Electric Industries, Ltd. Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
JP2008074671A (ja) * 2006-09-21 2008-04-03 Tohoku Univ 自立窒化物基板の製造方法
JP4656438B2 (ja) * 2006-11-13 2011-03-23 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP5125098B2 (ja) 2006-12-26 2013-01-23 信越半導体株式会社 窒化物半導体自立基板の製造方法
CN101595250A (zh) 2007-01-31 2009-12-02 住友化学株式会社 用于制备第ⅲ-ⅴ族化合物半导体的方法
EP2045374A3 (en) 2007-10-05 2011-02-16 Sumitomo Electric Industries, Ltd. Method of manufacturing a GaN substrate and a GaN epitaxial wafer
JP5181885B2 (ja) * 2007-10-05 2013-04-10 住友電気工業株式会社 ＧａＮ基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
JP2009126727A (ja) 2007-11-20 2009-06-11 Sumitomo Electric Ind Ltd ＧａＮ基板の製造方法、ＧａＮ基板及び半導体デバイス
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JP5737189B2 (ja) 2010-01-15 2015-06-17 三菱化学株式会社 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法
JP5304712B2 (ja) * 2010-04-07 2013-10-02 新日鐵住金株式会社 炭化珪素単結晶ウェハ
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JP2012101977A (ja) * 2010-11-10 2012-05-31 Hitachi Cable Ltd 窒化物半導体基板の製造方法及び窒化物半導体自立基板の製造方法
JP5938871B2 (ja) 2010-11-15 2016-06-22 住友電気工業株式会社 ＧａＮ系膜の製造方法
US8697564B2 (en) 2010-11-16 2014-04-15 Sumitomo Electric Industries, Ltd. Method of manufacturing GaN-based film
US9184228B2 (en) 2011-03-07 2015-11-10 Sumitomo Electric Industries, Ltd. Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
JP5641029B2 (ja) * 2012-09-24 2014-12-17 住友電気工業株式会社 Ｉｉｉ族窒化物系電子デバイス
JP2015157760A (ja) * 2015-05-28 2015-09-03 株式会社リコー １３族窒化物結晶および１３族窒化物結晶基板
JP7037329B2 (ja) 2017-10-27 2022-03-16 株式会社サイオクス 窒化物半導体基板、半導体積層物、基板選別プログラム、半導体装置選別プログラム、および半導体装置の製造方法
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JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
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CA2311132C (en) * 1997-10-30 2004-12-07 Sumitomo Electric Industries, Ltd. Gan single crystalline substrate and method of producing the same

Cited By (4)

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US7670856B2 (en) 2006-12-28 2010-03-02 Hitachi Cable, Ltd. Nitride semiconductor substrate and method of making same
EP2055811A2 (en) 2007-10-24 2009-05-06 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
US8466471B2 (en) 2007-12-22 2013-06-18 Hitachi Cable, Ltd. Nitride semiconductor free-standing substrate and method for making same
US8110484B1 (en) 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same

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