JP3778045B2 - 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置 - Google Patents

低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置 Download PDF

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JP3778045B2
JP3778045B2 JP2001311405A JP2001311405A JP3778045B2 JP 3778045 B2 JP3778045 B2 JP 3778045B2 JP 2001311405 A JP2001311405 A JP 2001311405A JP 2001311405 A JP2001311405 A JP 2001311405A JP 3778045 B2 JP3778045 B2 JP 3778045B2
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group
dielectric constant
low dielectric
hydrogen atom
constant material
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JP2001311405A
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Japanese (ja)
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JP2003119289A (ja
JP2003119289A5 (US06924240-20050802-C00022.png
Inventor
英治 信時
輝彦 熊田
利之 豊島
直紀 保田
偉 長江
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2001311405A priority Critical patent/JP3778045B2/ja
Priority to US10/266,794 priority patent/US6924240B2/en
Publication of JP2003119289A publication Critical patent/JP2003119289A/ja
Priority to US11/107,800 priority patent/US20050181628A1/en
Publication of JP2003119289A5 publication Critical patent/JP2003119289A5/ja
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Publication of JP3778045B2 publication Critical patent/JP3778045B2/ja
Priority to US12/558,810 priority patent/US8674046B2/en
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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JP2001311405A 2001-10-09 2001-10-09 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置 Expired - Fee Related JP3778045B2 (ja)

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JP2001311405A JP3778045B2 (ja) 2001-10-09 2001-10-09 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置
US10/266,794 US6924240B2 (en) 2001-10-09 2002-10-09 Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device
US11/107,800 US20050181628A1 (en) 2001-10-09 2005-04-18 Process for preparing low dielectric constant material
US12/558,810 US8674046B2 (en) 2001-10-09 2009-09-14 Source material for preparing low dielectric constant material

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JP2001311405A JP3778045B2 (ja) 2001-10-09 2001-10-09 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置

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JP2005267805A Division JP4415921B2 (ja) 2005-09-15 2005-09-15 半導体装置

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