JP3624909B2 - レーザ加工方法 - Google Patents

レーザ加工方法 Download PDF

Info

Publication number
JP3624909B2
JP3624909B2 JP2003067276A JP2003067276A JP3624909B2 JP 3624909 B2 JP3624909 B2 JP 3624909B2 JP 2003067276 A JP2003067276 A JP 2003067276A JP 2003067276 A JP2003067276 A JP 2003067276A JP 3624909 B2 JP3624909 B2 JP 3624909B2
Authority
JP
Japan
Prior art keywords
workpiece
substrate
cutting
region
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003067276A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004001076A (ja
JP2004001076A5 (https=
Inventor
憲志 福満
文嗣 福世
直己 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2003067276A priority Critical patent/JP3624909B2/ja
Priority to TW097143686A priority patent/TWI337560B/zh
Priority to TW092124999A priority patent/TWI326626B/zh
Priority to AU2003262079A priority patent/AU2003262079A1/en
Priority to PCT/JP2003/011626 priority patent/WO2004082006A1/ja
Priority to MYPI20033471A priority patent/MY147331A/en
Priority to KR1020057016793A priority patent/KR100853057B1/ko
Priority to EP03816257A priority patent/EP1610364B1/en
Priority to CNB038257114A priority patent/CN100383926C/zh
Priority to US10/548,522 priority patent/US8969752B2/en
Publication of JP2004001076A publication Critical patent/JP2004001076A/ja
Application granted granted Critical
Publication of JP3624909B2 publication Critical patent/JP3624909B2/ja
Publication of JP2004001076A5 publication Critical patent/JP2004001076A5/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2003067276A 2002-03-12 2003-03-12 レーザ加工方法 Expired - Lifetime JP3624909B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2003067276A JP3624909B2 (ja) 2002-03-12 2003-03-12 レーザ加工方法
TW092124999A TWI326626B (en) 2002-03-12 2003-09-10 Laser processing method
TW097143686A TWI337560B (en) 2002-03-12 2003-09-10 Laser processing method
PCT/JP2003/011626 WO2004082006A1 (ja) 2003-03-12 2003-09-11 レーザ加工方法
MYPI20033471A MY147331A (en) 2003-03-12 2003-09-11 A machining method using laser
KR1020057016793A KR100853057B1 (ko) 2003-03-12 2003-09-11 레이저 가공 방법
AU2003262079A AU2003262079A1 (en) 2003-03-12 2003-09-11 Laser beam machining method
EP03816257A EP1610364B1 (en) 2003-03-12 2003-09-11 Laser beam machining method
CNB038257114A CN100383926C (zh) 2003-03-12 2003-09-11 激光加工方法
US10/548,522 US8969752B2 (en) 2003-03-12 2003-09-11 Laser processing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002067372 2002-03-12
JP2002067348 2002-03-12
JP2003067276A JP3624909B2 (ja) 2002-03-12 2003-03-12 レーザ加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004280356A Division JP4509719B2 (ja) 2002-03-12 2004-09-27 レーザ加工方法

Publications (3)

Publication Number Publication Date
JP2004001076A JP2004001076A (ja) 2004-01-08
JP3624909B2 true JP3624909B2 (ja) 2005-03-02
JP2004001076A5 JP2004001076A5 (https=) 2005-04-07

Family

ID=30449126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003067276A Expired - Lifetime JP3624909B2 (ja) 2002-03-12 2003-03-12 レーザ加工方法

Country Status (2)

Country Link
JP (1) JP3624909B2 (https=)
TW (1) TWI337560B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032903A (ja) 2003-07-10 2005-02-03 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4505789B2 (ja) * 2004-02-10 2010-07-21 株式会社東京精密 チップ製造方法
JP4768963B2 (ja) * 2004-03-01 2011-09-07 リンテック株式会社 ウェハの転写方法
JP2005252126A (ja) * 2004-03-08 2005-09-15 Disco Abrasive Syst Ltd ウエーハの加工方法
JP4584607B2 (ja) * 2004-03-16 2010-11-24 浜松ホトニクス株式会社 加工対象物切断方法
JP2005276987A (ja) * 2004-03-24 2005-10-06 Lintec Corp 極薄チップの製造プロセス及び製造装置
JP4536407B2 (ja) 2004-03-30 2010-09-01 浜松ホトニクス株式会社 レーザ加工方法及び加工対象物
CN1938827B (zh) * 2004-03-30 2010-05-26 浜松光子学株式会社 激光加工方法及半导体芯片
EP1742253B1 (en) * 2004-03-30 2012-05-09 Hamamatsu Photonics K.K. Laser processing method
JP4694795B2 (ja) 2004-05-18 2011-06-08 株式会社ディスコ ウエーハの分割方法
JP4769429B2 (ja) * 2004-05-26 2011-09-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4733934B2 (ja) * 2004-06-22 2011-07-27 株式会社ディスコ ウエーハの加工方法
JP4634089B2 (ja) * 2004-07-30 2011-02-16 浜松ホトニクス株式会社 レーザ加工方法
US8604383B2 (en) * 2004-08-06 2013-12-10 Hamamatsu Photonics K.K. Laser processing method
JP2006059941A (ja) * 2004-08-19 2006-03-02 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4917257B2 (ja) 2004-11-12 2012-04-18 浜松ホトニクス株式会社 レーザ加工方法
JP4781661B2 (ja) * 2004-11-12 2011-09-28 浜松ホトニクス株式会社 レーザ加工方法
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP4809632B2 (ja) 2005-06-01 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4705418B2 (ja) * 2005-06-29 2011-06-22 株式会社ディスコ ウェーハの加工方法
JP2007118207A (ja) * 2005-10-25 2007-05-17 Seiko Epson Corp 積層体の加工方法
JP2007165835A (ja) * 2005-11-16 2007-06-28 Denso Corp レーザダイシング方法および半導体ウェハ
JP4909657B2 (ja) * 2006-06-30 2012-04-04 株式会社ディスコ サファイア基板の加工方法
JP5107092B2 (ja) * 2008-02-26 2012-12-26 浜松ホトニクス株式会社 半導体受光素子の製造方法
JP4951552B2 (ja) * 2008-02-26 2012-06-13 浜松ホトニクス株式会社 半導体光検出装置
JP4951551B2 (ja) * 2008-02-26 2012-06-13 浜松ホトニクス株式会社 半導体光検出装置
JP5087426B2 (ja) * 2008-02-26 2012-12-05 浜松ホトニクス株式会社 フォトダイオードアレイ
JP4951553B2 (ja) * 2008-02-26 2012-06-13 浜松ホトニクス株式会社 半導体受光素子
DE102008021355B4 (de) * 2008-03-14 2020-08-20 Solarworld Industries Gmbh Verfahren zur Herstellung monokristalliner Solarzellen mit rückseitiger Kontaktstruktur
JP5155030B2 (ja) * 2008-06-13 2013-02-27 株式会社ディスコ 光デバイスウエーハの分割方法
JP5231136B2 (ja) 2008-08-22 2013-07-10 株式会社ディスコ 光デバイスウエーハの加工方法
JP5537081B2 (ja) 2009-07-28 2014-07-02 浜松ホトニクス株式会社 加工対象物切断方法
JP5559623B2 (ja) * 2010-07-15 2014-07-23 株式会社ディスコ 分割方法
JP5416081B2 (ja) * 2010-12-27 2014-02-12 古河電気工業株式会社 ウエハ貼着用粘着シート、ウエハの個片化方法、およびチップの製造方法
KR101299236B1 (ko) 2011-12-28 2013-08-22 주식회사 이오테크닉스 레이저를 이용한 웨이퍼 지지용 지지 테이프 절단 장치 및 방법
JP5770677B2 (ja) * 2012-05-08 2015-08-26 株式会社ディスコ ウェーハの加工方法
JP6180742B2 (ja) * 2013-01-17 2017-08-16 株式会社ディスコ テープ貼着方法及びテープ貼着装置
JP2015119076A (ja) * 2013-12-19 2015-06-25 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
DE102014213775B4 (de) * 2014-07-15 2018-02-15 Innolas Solutions Gmbh Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen, kristallinen Substraten, insbesondere von Halbleitersubstraten
JP7157301B2 (ja) 2017-11-06 2022-10-20 株式会社東京精密 ウェーハの加工方法
JP7334065B2 (ja) * 2019-05-28 2023-08-28 株式会社ディスコ チップの製造方法
JP6653943B1 (ja) * 2019-12-25 2020-02-26 株式会社東京精密 抗折強度の高いチップを得る半導体ウェーハのレーザ加工装置
JP7486327B2 (ja) * 2020-03-05 2024-05-17 株式会社ディスコ チップの製造方法
KR102688331B1 (ko) * 2021-09-30 2024-07-25 주식회사 에스에프에이반도체 Cis 웨이퍼 다이싱 방법

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11826846B2 (en) 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US12594622B2 (en) 2018-12-29 2026-04-07 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US12070875B2 (en) 2019-05-17 2024-08-27 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Also Published As

Publication number Publication date
TWI337560B (en) 2011-02-21
JP2004001076A (ja) 2004-01-08
TW200914185A (en) 2009-04-01

Similar Documents

Publication Publication Date Title
JP3624909B2 (ja) レーザ加工方法
KR100853057B1 (ko) 레이저 가공 방법
JP3762409B2 (ja) 基板の分割方法
JP4515096B2 (ja) レーザ加工方法
JP3670267B2 (ja) レーザ加工方法
WO2004080643A1 (ja) レーザ加工方法
JP4409840B2 (ja) 加工対象物切断方法
JP4509720B2 (ja) レーザ加工方法
JP3761567B2 (ja) レーザ加工方法
JP4509719B2 (ja) レーザ加工方法
JP3935189B2 (ja) レーザ加工方法
JP2005159378A (ja) レーザ加工方法
JP4463796B2 (ja) レーザ加工方法
JP5025876B2 (ja) レーザ加工装置
WO2004080642A1 (ja) レーザ加工方法
JP4663952B2 (ja) レーザ加工装置及びレーザ加工方法
JP4146863B2 (ja) 半導体基板の切断方法
JP3869850B2 (ja) レーザ加工方法
JP2004268103A (ja) レーザ加工方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040524

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20040524

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20040607

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040728

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040927

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20041116

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20041122

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 3624909

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071210

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081210

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091210

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091210

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091210

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101210

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111210

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121210

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 9

EXPY Cancellation because of completion of term