JP5107092B2 - 半導体受光素子の製造方法 - Google Patents
半導体受光素子の製造方法 Download PDFInfo
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- JP5107092B2 JP5107092B2 JP2008044722A JP2008044722A JP5107092B2 JP 5107092 B2 JP5107092 B2 JP 5107092B2 JP 2008044722 A JP2008044722 A JP 2008044722A JP 2008044722 A JP2008044722 A JP 2008044722A JP 5107092 B2 JP5107092 B2 JP 5107092B2
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Claims (1)
- 互いに対向する第1及び第2の主面を有し、前記第1の主面側に形成されたフォトダイオードを含む画素部が複数配置されている半導体基板を準備する工程と、
隣接する前記画素部間の所定位置に集光点を合わせて前記半導体基板の前記第2の主面側からレーザ光を照射することによって、隣接する画素部へキャリアが拡散することを妨げる改質領域を形成する工程と、を備え、
前記改質領域が、前記第1の主面に露出することなく、前記集光点から前記第2の主面側へ拡がって形成されていることを特徴とする半導体受光素子の製造方法。
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JP2008044722A JP5107092B2 (ja) | 2008-02-26 | 2008-02-26 | 半導体受光素子の製造方法 |
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JP2008044722A JP5107092B2 (ja) | 2008-02-26 | 2008-02-26 | 半導体受光素子の製造方法 |
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JP2009206170A JP2009206170A (ja) | 2009-09-10 |
JP5107092B2 true JP5107092B2 (ja) | 2012-12-26 |
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JP3624909B2 (ja) * | 2002-03-12 | 2005-03-02 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP4394904B2 (ja) * | 2003-06-23 | 2010-01-06 | 浜松ホトニクス株式会社 | フォトダイオードアレイの製造方法 |
JP4322881B2 (ja) * | 2006-03-14 | 2009-09-02 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
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