CN107750398A - 具有精细线金属化的光电设备及制造方法 - Google Patents
具有精细线金属化的光电设备及制造方法 Download PDFInfo
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- H01L31/02—Details
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- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
一用于形成光电设备的方法,包括:形成一金属膜在掺杂的半导体上;形成一图案化抗蚀体于所述金属膜上;蚀刻所述金属膜;形成一介电层于所述掺杂的半导体和所述抗蚀体上;以及施加激光给图案化的抗蚀体,以去除所述图案化的抗蚀体,所述激光具有由图案化抗蚀体吸收通过介电层的波长。
Description
相关申请信息
本发明要求2015年5月8日申请的美国专利申请No. 14/707, 697的优先权,并且本发明与2011年11月15日(代理人案卷No. 3304.001A)申请的美国专利申请No. 13/265,462、2012年9月25日(代理人案卷No. 3304.008A)申请的美国专利申请No. 13/637,176、2011年2月15日(代理人案卷No. 3304.010A)申请的美国专利No. 8,236,604、2012年1月23日(代理人案卷No. 3304.011(P))申请的美国专利申请No. 61/589,459、2014年7月23日(代理人案卷No. 3304.011A)申请的美国申请序列No 14/373,938、2012年6月8日(代理人案卷No.3304.012(P))申请的美国临时专利申请No. 61/657,098、2012年10月25日(代理人案卷No.3304.013(P))申请的美国申请序列No. 61/718,489、2013年10月24日(代理人案卷No.3304.013AWO)申请的PCT国际申请No. PCT/US2013/066532、2015年5月8日(代理人案卷No.3304.017)申请的美国专利申请No. 14/707,725相关。上述内容作为参考全部结合引用于本文。
技术领域
本文公开的实施方式一般涉及包括太阳能电池和具有太阳能电池的太阳能模组的光电设备。尤其是,本文公开的实施方式涉及改进的太阳能电池结构和提高电池效率的制造方法。
背景技术
光电设备例如使用沉积在衬底上的半导体材料,将入射太阳光的光子转化成可用的电能。所述半导体层由N型半导体材料和P型半导体材料制成。N型或P型半导体层与具有相反类型的半导体层的相互作用建立一PN结,便于通过光电效应吸收光子产生的电子和空穴运动,以产生电流。
光电转换效率高、以及来自太阳能电池/模组的电能输出多,是光电设备的理想特征。
相应地,有关高效率的光电设备以及制造方法的需求在上升。
发明内容
本发明,一方面提供用于形成光电设备的方法,所述方法包括在半导体衬底表面形成有一掺杂半导体层,在所述掺杂半导体层上形成一金属膜。在所述金属膜上形成有一图案化抗蚀体,且一介电层形成在所述掺杂半导体和所述抗蚀体上。具有通过图案化抗蚀体可吸收波长的激光,通过所述介电层施加到所述图案化抗蚀体,以去除所述图案化抗蚀体。
附图说明
图1为太阳能电池部分截面视图,该太阳能电池具有优化的前接触结构,以适合高效的太阳能电池;
图2示出了金属接触线可被用作晶种层,以开始镀一理想厚度的电极;
图3-10为太阳能电池部分截面视图,示出了本发明示例一金属抗蚀体被用于形成用于如太阳能电池的金属网格图案,如下:
图3示出了沉积在太阳能电池衬底上的金属接触;
图4示出了分布于所述太阳能电池金属膜上方的窄抗蚀体;
图5示出了金属接触除了被抗蚀体覆盖的部分外被蚀刻;
图6示出了形成在图5太阳能电池上方的一单个双功能钝化/防反射层;
图7示出了激光去除所述抗蚀体离开所述接触,并去除图6钝化/防反射层的一部分离开所述单个双功能钝化/防反射层的部分;
图8示出了形成在所述剩余金属接触上的电接触;
图9示出了用于形成图1-8设备的制造过程示例的流程图;
图10为示出一电极结构示例的平面示图;
图11示出了适用于实现本发明激光处理的激光加工系统的简化示意图;
图12示出了依据本发明的两种可适用的束流强度功率密度或能量密度分布;
图13、14示出了依据本发明通过介电覆盖层自对准选择性激光烧蚀叠加在一图案金属膜上的过程,一方形平顶光束剖面如何在衬底上扫描或转变的示例;以及
图15、16示出了依据本发明通过介电覆盖层自对准选择性激光烧蚀叠加在一图案金属膜上的过程,一方形平顶光束剖面如何在衬底上扫描或转变的示例。
详细说明
本发明方面、特定特征、优势及上述细节依据结合附图示出的非限制性示例,在下述被充分解释。因没有不必要模糊本发明细节,已知材料、制造工具、处理技术等描述被省略。应当理解,详细说明和具体示例,虽然示出了本发明实施方式,但仅作为说明方式被给出,并不是限制方式。多种基于发明概念的精神和/或范围内的替代,修改,增加,和/或布置,本领域技术人员从此文公开内容了解是清楚的。
本文公开实施方式涉及光电设备,包括光伏电池和具有多个光伏电池的模组,以及它们的制造方法。光伏电池能被用作在一表面接收光线的单面电池,或用作接收来自一表面和另一相反表面光的双面电池。
影响太阳能效率和输出的一重要参数是太阳能电池的入射光表面的面积量,太阳能电池被电极(直接)覆盖或(通过一定入射光角度)遮蔽,所述电极需采集并移动由太阳能电池产生的电流。由电极覆盖和遮蔽面积可随电极尺寸的减小而减小。例如,电极通常以手指状形成,且减小电极手指宽度增加接收和转换入射光设备上的可用光伏面积。
在一示例中,传统的太阳能电池生产可使用丝网印刷技术在光电设备前表面上印刷电极,该技术通常使用金属胶(如银胶)。该技术由于使用的印刷胶内有几种非金属成分(如,玻璃粉),因而产生的金属网格具有较宽的电极线宽度(如,超过50um(通常约100um)),和相对低的线导电率。如上所述,增大线宽可增大遮蔽,且较少光落于太阳能电池的入射光表面上。此外,烧结工艺由于金属胶的成分而使得电池衬底污染,因此降低了设备的能源转换效率。此外,一些金属胶(如银)相对昂贵,作为主要电极材料是不合适的。
图3-16示出了本发明一使用金属抗蚀体形成用于如太阳能电池的金属网格图案的示例。可以理解许多技术存在是用于依据本发明在衬底上形成金属图案,且介绍的顺序仅为一可能示例。
首先,提供一衬底1。该衬底可以是P型或N型掺杂的硅半导体晶片。所述衬底可具有如随机金字塔图案的结构,以提高太阳能电池的光捕获。所述衬底可在任意一边或两边具有掺杂剂扩散,以形成发射体结构或表面电场。该掺杂剂扩散可以是图案化的,例如形成所谓选择的放射体结构。所述衬底可具有在任意一边表层或两边表层上的薄膜钝化层。该钝化层可例如由掺杂的或固有的非晶硅层、二氧化硅、氮化硅、掺杂的或固有的多晶硅、掺杂的或固有的碳化硅、氧化铝或任何一种类型的钝化层和上述组合构成。
一金属膜4沉积在所述衬底表面上方,且图3结果所示的结构示出了一金属膜4在衬底1上方。该金属沉积可例如,利用已建立的技术如溅射、热蒸发或电子束蒸发来完成。可以理解此金属膜可由多种不同金属层构成,其中这些金属层需要实现不同功能。例如,一底部-接近衬底-金属层可需形成好的电接触,并附着于所述衬底,一顶部或中间金属层可需作为扩散壁垒,以及一顶部金属层可需发挥一电镀晶种的作用。进一步,可以理解所述金属膜可需具备特定性能,如厚度和/或成分。
一图案化抗蚀体3(例如,窄抗蚀线)可之后(例如,使用喷墨打印机)形成在金属膜4上方,以形成一如图4描述的以及图9步骤307示出的结构155。图案化抗蚀体3可由已知材料,如市面上可买到的喷墨打印抗蚀剂(inkjet printable resists)形成,该喷墨打印抗蚀剂被配置以吸收激光光源波长,并以图案沉积于结构155的金属膜4上。一实施方式中,蚀刻图案可包括一图案,用于之后形成窄导电手指和相对所述手指横向延伸的较宽连接汇流排。一示例中,蚀刻体3可以是UV固化黑或其他颜色的抗蚀墨,其能吸收激光光源的波长。在应用抗蚀体3(如通过印刷)前,图3描述的结构155可被预先处理去减少金属膜4表面能量,形成疏水表面。该预处理有助于确保当应用抗蚀体(如印刷)时,所述抗蚀体形成珠状于金属膜4上并不扩散。所述预处理可包括一具有一疏水基的单体结构的沉积,所述疏水基具有附着在金属膜4表面的反应链。另外,等离子处理可被用于该预处理,或者分子的单体结构层可如表面处理被沉积。简而言之,任何金属膜4的表面处理,使表面疏水的或其他抑制抗蚀体(如抗蚀体3)流动在金属膜(如金属膜4)上,可被采用。抗蚀体3(图5)可由任意多种已知技术形成。一实施方式中,抗蚀体3(图4)可由上述所示的喷墨印刷技术形成。在另一实施方式中,抗蚀体3(图4)可通过点胶、喷射、屏幕印刷或光刻技术形成。
在抗蚀体3印刷在金属膜4上后,在金属膜4上的抗蚀体3可在UV光下固化,以将抗蚀体3固定位置于金属膜4上。取决于选择或使用的特定抗蚀材料,使用70-150C范围的低温固化工艺是有利的,以去除残余水,如果有的话,将残余水从抗蚀体中去除,并促进对金属层的附着。在抗蚀体3被固化后,可蚀刻金属膜。图案化的抗蚀体3保护被图案化抗蚀体3覆盖的金属膜4的部分,在金属膜4暴露于合适的金属蚀刻溶液,如酸溶液期间(例如,通过合适的金属酸蚀刻溶液,图9的步骤308)。
金属膜4的蚀刻产生一结构160,如图5所示,其示出了在所述抗蚀体下方的金属膜4无钻蚀(undercutting)。但是,取决于蚀刻条件,蚀刻可提供一在抗蚀体3下方的金属膜的细长钻蚀。在一金属膜4由钛镍/钒晶种层形成的示例中,采用两步蚀刻完成。硝酸或氯化铁被用于蚀刻镍/钒层,氢氟酸刻蚀被用于蚀刻钛层。其他蚀刻溶液还可被利用取决于材料,形成抗蚀体(如抗蚀体3)和金属膜(如金属膜4)。
具有如钝化层和防反射覆盖层两功能的一材料层212,可之后形成在结构164上的前表面162上,在图6中描述并在图9的步骤309中示出。另外,该材料层(如材料层212)可形成在表面162和衬底1的背面(图中未示出)上。材料层可由任意介电材料形成,其具有一防反射覆盖层的光学特性且能钝化衬底1,并且可利用PECVD沉积。还如图6所示,材料层212(如双功能的钝化/防反射层)沉积在任意暴露的抗蚀体上方(如抗蚀体3)和在衬底1上方。尽管图6为了清晰起见没有放大、缩小,可以理解所述材料层212覆盖衬底1的纹理表面,而维持纹理图案,也就是材料层212在材料层212沉积后保持纹理。材料层212可由氮化硅形成,其使得所述层充当钝化层和防反射覆盖层。进一步,材料层212还可由碳化硅的未掺杂层形成(如,作为放反射覆盖层并作为钝化层)。在另一实施方式中(图中未示出),材料层可如上描述被应用,但不会同时实现防反射和钝化功能。例如,二氧化钛可被用作仅能提供防反射覆盖的层。
在施加材料层212后,抗蚀体3和在抗蚀体3上方的材料层212的部分212a(图6)可如图7所示去除,且如图9的所示步骤310。该去除可通过破坏、分离或其他任意方法实现,使得部分212a和抗蚀体3的部分从金属膜4的表面264去除。
在一实施方式下,所述去除可由图7所示的激光260完成。例如,激光260发射的激光束262(图7)可具有波长,其被配置来加热并扩展图案化的蚀刻体(如蚀刻体13),而其他材料或设备部件没有一个被显著影响。因为激光束262(图7)仅与图案化的蚀刻体3(图6)相互作用,激光束被认为自对准所述蚀刻体3(图6)。
更具体地,激光260可发射激光束262(或多个激光束262),所述激光束262具有穿过材料层212部分212a波长的,保持在抗蚀体3上方,其被抗蚀体3吸收。激光260的照射可因此加热抗蚀体3,使其从金属膜4表面264扩大、粉碎、分离,而其他材料或设备部件没有被显著影响。叠加在抗蚀体3上的部分212a可易碎的,因此激光可使得部分212a分离并剥落。激光束穿过抗蚀体3的任意部分还可反射出金属膜4的表面264,并反射回抗蚀体3以便于抗蚀体3加热。衬底11的表面(图7)可在同一时间逐步地被激光完全照射,或部分例如相对于图案化的蚀刻体3的位置(图1G)被激光照射。
正如本文,激光260可发射具有与图案化的蚀刻体3相互较好作用的波长的激光束262,使得图案化的抗蚀体3粉碎,且叠加在抗蚀体上的材料层212的部分212a分离并剥落,产生如图7所示的烧蚀结构170。结构170可在同一时间逐渐地被激光完全照射,或部分例如相对于抗蚀体3位置(图6)被激光照射。激光260例如,可以是1064nm激光。在使用期间,激光可通过矩形光斑形成的激光束扫描表面(如部分212a),该激光束具有约2 x2 mm尺寸,且没有矩形重叠。在该矩形间可能存在长达50微米(um)的小间隙,以避免激光束(如激光束262)激中一位置两次。在抗蚀体(如抗蚀体3)被去除后,具有钻蚀部分(如金属膜4)的激光束(如激光束262)的任何接触,对钻蚀部分是有害的,以致于能很好地避免激光在一特定位置的多种应用,并避免激光束在抗蚀体去除后接触所述金属膜。
进一步,尽管所描述的过程与结构155相关,形成金属膜(如金属膜4)、形成一抗蚀体(如抗蚀体3)于所述金属膜上,形成一介电层(如形成有放反射和/或钝化层的材料层212)以及利用激光去除抗蚀体部分的过程还可被用于其他具有衬底的太阳能电池结构上,该太阳能电池结构与所述结构155形成不同。
图11示出了适用于实现本发明激光处理的激光加工系统的简化示意图。激光束262可由激光260产生。激光束可通过可选的外部光学器件,该光学器件可包括部件,如光束扩展器、束准直仪、光束均匀器、图像遮罩、纤维素输送系统、可变衰减器、替续透镜和反光镜。一检流计扫描仪和/或一平移台可被用于转变激光束来遮盖如用于太阳能电池的衬底。最后镜头被用于聚集光束在如用于太阳能电池的衬底上。该激光匹配系统设置如图11所示,是现成可用的,且用于高吞吐量的工业应用,如太阳能电池制造。
本发明可使用不同激光束强度分布。图12示出了两个应用的激光束强度分布(功率密度或流量)的示例。
一高斯光束分布,或接近高斯的光束分布,是一由许多激光源产生的典型分布,任何截面的强度分布是一以光束轴为中心的圆对称高斯函数。另一所示光束分布为所谓的“顶-帽(top-hat)”或“平-顶(flat-top)”光束分布。该分布理想上具有在暴露面积内的接近统一的强度。平-顶暴露面形状可以是圆形的、方形的、长方形的或任意由合适光学器件产生的形状。该顶-帽光束分布通常使用特殊的衍射或折射光学器件,或称为光束成型器的多模光纤产生。这些剖面的任意或组合或变化,可被依据本发明用于激光处理。
图13-14示出了通过介电覆盖层自对准选择性激光烧蚀叠加在一金属膜4上的过程,一方形平顶光束剖面如何在衬底上扫描或转变的示例。可见,这个过程对窄金属手指的大小、替代和形状的变化是宽容的。可以理解不同光束扫描、重叠和替代方案应用于本发明,且示出的两个仅是一般规则的代表性示例。
图13-14示出了使用方形顶-帽分布激光束光斑进行全面激光照射的示例。方形光斑被扫描或移动来覆盖整个过程面积。图14可见,自对准选择的激光烧蚀过程去除介电覆盖层,所述介电覆盖层叠加在金属膜4上的抗蚀体3,该辐射图案的性能与抗蚀体3的大小、位置或形状无关。
图15-16示出了使用方形顶-帽分布的激光束光斑对准的激光辐射的示例。方形光斑被扫描或移动来覆盖金属膜4(如,窄的金属手指)。从图6中可见,对于可选的激光烧蚀过程去除叠加于抗蚀体3的一介电覆盖层,这个辐射图案并不需要准确地追踪抗蚀体3大小、位置或形状的变化。
任何与抗蚀体3分解和材料层212叠加部分212a相关的碎片,可通过如使用合适的如图9步骤311所示的风机将任何碎片吹走的方式去除。基于水的洗涤剂或基于溶液的喷射还可选择性地被用于清洁图7中描述的结构170。
在上述以及图7描述的结构170清洁之后,需要进行低温退火,温度为低于或约为500º C的相对低温,以有利于金属膜4附着于衬底1,且具有好的电接触,如图9所示的步骤312。退火可如在温度约250º C到约500º C的范围内完成。如某一示例,退火在约375º C温度下约2分钟完成。该低温退火还可减弱对衬底1半导体层在金属膜4沉积期间发生的危害。该退火可在具有非常低的氧浓度的大气下进行,以避免表面264氧化,使得后期电镀困难。通常,大气将含有少于100ppm的氧气,且优选少于20ppm氧气。该退火环境可以是具有少量合成气体,如氢气的氮气环境。采用的合成气体可取决于所使用材料/金属(如金属膜4)的类型,来避免材料/金属氧化或其他不理想特征。合成气体可有约为0-5%的浓度,如4%的体积。合成气体还有助于减少表面264的氧化。
如图8所示,导体270可之后形成于金属表面264上。导体270可由一个或多个导电材料形成,例如金属,如镍、铜、银、钛、钒、锡或上述任意组合。所述导体可被用于表面264。
一实施方式下,导体270可包括具有施加于表面264的镍层、电镀于所述镍层的铜层、电镀于所述铜层的银层的金属栈,如图9的步骤313所示。导体270可通过电镀于晶种金属表面上形成。电镀发生在金属膜4(即,不是在材料层212的区域上)的所有暴露的表面(如表面264)上。相应地,任何金属膜4的钻蚀,发生在上述金属膜4的蚀刻期间(图5),可在电镀过程(图中未示出)中实现。一无电镀沉积物还可被用于产生导体270。在一示例中,导体270可由镍、铜、银导体栈形成。镍部分271、铜层部分272、以及银部分可被各向同性镀于导体270上。
使用上述描述的技术,可生产非常窄的手指和汇流排导体。例如,导电手指290和汇流排292可如上述描述的用于导体270的方式形成。如图10所示,导电手指290可具有约40um -约60 um范围的宽度和约5 um -约20 um范围的高度,且被放置约0.2mm-约2.5mm范围的节距。横向的汇流排292可具有范围约0.5 mm-约2.5mm范围的宽度,约5 um -约20 um范围的高度,且每个间隔距离约52mm放置。手指导体290和母线导体292允许更多光线进入衬底(如衬底1),用于光子转换,且描述的短的高度减少了阴影光击中该衬底。
许多实施方式被描述并被示出。然而,可以理解需要修改在不偏离本发明精神和范围下可被做出,本发明的精神和范围仅由所附的权利要求的范围所限定。
Claims (17)
1.一用于形成光电设备的方法,包括:
形成一金属膜在掺杂的半导体上;
形成一图案化抗蚀体于所述金属膜上;
蚀刻所述金属膜;
形成一介电层于所述掺杂的半导体和所述抗蚀体上;以及
施加激光给图案化的抗蚀体,以去除所述图案化的抗蚀体,所述激光具有由图案化抗蚀体吸收通过介电层的波长。
2.根据权利要求1所述的方法,其中,施加所述激光去除所述抗蚀体包括,激光使得所述抗蚀体粉碎,并使得与所述图案化抗蚀体接触的介电层的部分分裂。
3.根据权利要求1所述的方法,其中,施加所述激光去除所述抗蚀体包括,激光加热所述抗蚀体,使得所述抗蚀体扩展并打破在所述抗蚀体上方的介电层。
4.根据权利要求1所述的方法,其中,还包括在所述图案化抗蚀体形成之前,预加热所述金属膜,使得所述金属膜为疏水的。
5.根据权利要求1所述的方法,其中,形成所述抗蚀体还包括,固化抗蚀体来使抗蚀体定位于晶种金属层上的位置。
6.根据权利要求1所述的方法,还包括在图案化抗蚀体和所述介电层的部分被去除之后,退火所述金属膜。
7.根据权利要求6所述的方法,其中,所述退火在低于500ºC的温度下进行。
8.根据权利要求7所述的方法,其中,所述退火在约250 º C-约500 º C的温度范围下进行。
9.根据权利要求6所述的方法,其中,所述退火持续约5分钟。
10.根据权利要求1所述的方法,还包括通过电镀形成一导体于所述金属膜上。
11.根据权利要求10所述的方法,其中,形成所述导体包括:修复在晶种金属层中的钻蚀。
12.根据权利要求10所述的方法,其中,所述导体由无电镀的沉积物形成。
13.根据权利要求10所述的方法,其中,所述导体由一镍、铜、银的电镀有序沉积物形成。
14.根据权利要求1所述的方法,其中,所述波长具有约1064nm波长。
15.根据权利要求1所述的方法,其中,激光束包括许多非重叠的激光光斑。
16.根据权利要求1所述的方法,其中,激光光斑相互之间的间隔距离达50微米。
17.根据权利要求1所述的方法,其中,形成所述介电层包括,形成一防反射层或一钝化层。
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WO2016182928A2 (en) | 2016-11-17 |
US20160329440A1 (en) | 2016-11-10 |
EP3295489A2 (en) | 2018-03-21 |
US9673341B2 (en) | 2017-06-06 |
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US20170243987A1 (en) | 2017-08-24 |
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