JP3491003B2 - チップサイズパッケージ半導体 - Google Patents

チップサイズパッケージ半導体

Info

Publication number
JP3491003B2
JP3491003B2 JP36412197A JP36412197A JP3491003B2 JP 3491003 B2 JP3491003 B2 JP 3491003B2 JP 36412197 A JP36412197 A JP 36412197A JP 36412197 A JP36412197 A JP 36412197A JP 3491003 B2 JP3491003 B2 JP 3491003B2
Authority
JP
Japan
Prior art keywords
chip
substrate
slot
signal circuit
wire bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36412197A
Other languages
English (en)
Other versions
JPH10275880A (ja
Inventor
炳 植 孔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of JPH10275880A publication Critical patent/JPH10275880A/ja
Application granted granted Critical
Publication of JP3491003B2 publication Critical patent/JP3491003B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 【０００１】 【発明の属する技術分野】本発明はチップサイズパッケ
ージ（ＣＳＰ：Ｃｈｉｐ Ｓｉｚｅ Ｐａｃｋａｇｅ）
半導体に関するもので、特に、従来のＬＯＣ（Ｌｅａ
ｄ Ｏｎ Ｃｈｉｐ）方式のチップをそのまま収容する
よう特殊に、考案された単一層セラミック基板（ｓｕｂ
ｓｔｒａｔｅ）を採用しパッケージの厚さをより縮小し
生産性を向上させた新しいチップサイズパッケージ半導
体に関するものである。 【０００２】【従来の技術】 一般に、半導体パッケージを小型化する
ために、チップサイズパッケージ半導体が提案されてき
た。チップサイズパッケージ半導体（以下、ＣＳＰ半導
体と言う）は完成されたパッケージの大きさがチップの
大きさと同一であったり又は、チップの大きさより最大
１ｍｍまたは２０％程度大きいパッケージを示し、軽量
薄形の小型化を目的として種々の方式が開発されてき
た。 【０００３】以下、従来の技術のＣＳＰ半導体の２種類
を簡単に説明する。図１はＬＯＣ方式のチップを収容す
る従来のＣＳＰ半導体を示している。前記ＣＳＰ半導体
はＬＯＣ用チップ１と、前記チップ１の下面の所定位置
で付着テープ４を通じて支持するリードフレーム２とか
らなり、チップ１とリードフレーム２との間はワイヤボ
ンディング部３で相互接続されかつ、全体構成の支持、
保護、及び絶縁のためにモールディングコンパウンドで
成形される。 【０００４】しかしながら、前記ＣＳＰ半導体は予め一
定形態に形成された従来のリードフレームを利用するた
め、作業性が低下され、モールディング作業の際、チッ
プとリードフレームとの間にモールディングコンパウン
ドが充填されない空洞部が生じる恐れがありかつ、リー
ドフレームが変形される恐れがある。尚、トリム（Ｔｒ
ｉｍ）工程時、リードフレームの付近にパッケージチッ
ピング（Ｃｈｉｐｐｉｎｇ）及び亀裂が生じる可能性が
あり、パッケージの厚さを調整しにくい問題点があっ
た。 【０００５】従って、上記問題点を解消するために、高
熱加工されたセラミック（Ｃｏ−ＦｉｒｅｄＣｅｒａｍ
ｉｃ）基板を用いたＣＳＰ構造が提案された。すなわ
ち、セラミック基板上に信号回路を形成した後、基板の
両面の信号経路をビアホール（ｖｉａ−ｈｏｌｅ）で連
結させた構造の上面にバンパが形成されたチップを実装
しアンダーフィルコーティングしたＣＳＰ半導体が提案
された。 【０００６】しかし、前記セラミック基板を用いたＣＳ
Ｐ半導体は基板を成形した後、基板両面の信号経路を連
結させるための孔を正確な位置に加工しにくいというこ
とにより、基板製作の費用が増大され、大量生産が困難
であり、基板とチップとの間にバンパが介入されること
でパッケージ厚さの縮小が制限される問題点があった。 【０００７】 【発明が解決しようとする課題】前記のような問題点に
鑑み、本発明はチップを支持するためのベースとして作
用する特殊製作された単一層のセラミック基板を提供し
て従来のＬＯＣ方式の半導体チップをそのまま収容する
ことにより従来のＣＳＰパッケージより軽量薄形に小型
化できるチップサイズ半導体を提供することにある。 【０００８】本発明の他の目的はマルチ−形態の基板を
形成することにより低額で大量生産が可能なチップサイ
ズパッケージを提供することにある。 【０００９】本発明のさらに他の目的はセラミック材料
から製作された基板を採用することにより、動作中に生
じた熱を容易に放出してその寿命を延長させうるチップ
サイズパッケージ半導体を提供することにある。 【００１０】本発明のさらに他の目的は従来技術のよう
なモールディング工程ではなく、毛細管現象を用いたア
ンダーフィルコーティングでパッケージを組み立てパッ
ケージの信頼性を向上させかつ、工程時間を短縮させう
るチップサイズパッケージ半導体を提供することにあ
る。 【００１１】 【課題を解決するための手段】前記目的を達成するため
に、本発明のチップサイズパッケージ半導体は、下面中
央部を縦断するように列を成す点線状に多数のワイヤボ
ンディングパッドが形成されたチップと；チップの下面
側にその上面が位置するようにチップと平行に配置さ
れ、前記多数のワイヤボンディングパッドを囲むことが
可能なサイズで上下面を貫通する長方形状のスロットが
中央部に設けられ、下面にのみ信号回路パターンが形成
された単一層のセラミック板材からなる基板と；ワイヤ
ボンディングパッドがスロット中央部の上方位置に整列
されるようにチップを基板の上面に付着し固定するため
の付着部材と；チップと基板を保持するための保持手段
と；基板の信号回路パターン上に装着され外部回路を形
成する複数のボール部材と、を含み；スロットを通じ
て、チップのワイヤボンディングパッドと基板の信号回
路パターンとがワイヤにより相互接続され内部回路を形
成するチップサイズパッケージ半導体であって；基板の
信号回路パターンが形成された面は、ワイヤボンディン
グ部とボール装着部とを除いた残り部分が誘電体物質で
塗布されており、付着部材はスロットの短辺長を超える
幅を有する付着用テープであり、スロットの長辺両側に
長辺に沿ってそれぞれ同じ長さだけ基板上面に取り付け
られており；保持手段は、チップの先端まで完全に詰め
込まれるように調節された量のアンダーフィルコーティ
ング用樹脂溶液をチップと基板との間に毛細管現象を利
用し自然に充填した後、熱処理により充填された樹脂溶
液をキュウアリングすることによって形成されたことを
特徴とする。 【００１２】 【発明の実施の形態】以下、添付の図面を参照して本発
明に係るチップサイズパッケージ半導体のー実施の形態
の構成を詳細に説明する。図２（Ａ）は本発明に係るＣ
ＳＰ半導体の全体形状を示す。図２（Ｂ）は図２（Ａ）
のＣＳＰ半導体の断面構造を示す。図３は本発明に係る
ＣＳＰ半導体の単一層セラミック基板の断面、上面、下
面構造を示す。図２及び図３の図面符号について以下に
示す。すなわち、２１はチップ、２２は基板、２２ａは
スロット，２２ｂは基板上面，２２ｃは基板下面，２３
はテープ、２４はワイヤ、２５はボール（ボール部
材）、２６はアンダーフィルコーティング部、３０は信
号回路、３１はボール装着部をそれぞれ示す。 【００１３】図示のように、本発明はＬＯＣ方式のチッ
プ２１と、中央部には所定大きさのスロット２２ａが形
成されかつ、下面２２Ｃには信号回路３０パターンが形
成され、チップ２１を上面に実装する単一層セラミック
基板２２と、チップ２１を基板２２の上面２２ｂに取り
付けるためのＬＯＣ付着用テープ２３と、基板２２のス
ロット２２ａを通じてチップ２１と基板２２の下面２２
ｃに形成された信号回路３０のワイヤボンディング部を
接続させるワイヤ２４と、信号回路３０上に形成された
複数のボール装着部３１に各々装着され外部回路を構成
するボール２５と、前記構成要素を保持するためのアン
ダーフィルコーティング部２６とからなる。 【００１４】本発明の主要特徴である基板２２を再び説
明すると、図３に示すように、基板２２は単一層のセラ
ミック材であって、本発明に係るＣＳＰ半導体のベース
としての役割をし、中央部の所定位置に所定大きさのス
ロット２２ａが形成され、該上面２２ｂには何のパター
ンも形成されず、その下面２２ｃのみに信号回路３０の
パターンが形成される。前記パターンの形成は無電解鍍
金法で基板下面２２ｃ上にニッケル鍍金してから、電解
鍍金で金鍍金を実施して形成させる。 【００１５】信号回路３０は図３で点線で示したワイヤ
ボンディング及び信号回路３０の端部に形成されたボー
ル装着部３１とからなり、前記ワイヤボンディング部は
スロット２２ａを通じてワイヤ２４で直接チップ２１に
接続され各々のボール装着部３１にはボール２５が各々
装着されＰＣＢ（Ｐｒｉｎｔｅｄ ＣｉｒｃｕｉｔＢｏ
ａｒｄ）のパターンと繋がる。尚、基板（サブストレー
ト）２２の下面２２ｃには前記ワイヤボンディング部及
び前記ボール装着部を除いた部分は誘電体物質で塗布し
て絶縁させる。前述のように、本発明では下面２２ｃに
のみ信号回路パターンが形成された単一層のセラミック
基板が適用され、チップ２１と基板２２との間にはバン
パの必要がなくワイヤ２４で直接接続されパッケージの
厚さが従来のＣＳＰ半導体の場合よりさらに薄く製作す
ることが可能であり、基板２２には、従来の基板上に正
確な位置に複数の孔が形成される必要がなく、中央部に
所定大きさの単一スロットが形成されるため、加工及び
製造がし易くなる。従って、製造費用の節減と大量生産
が可能となりうる。 【００１６】セラミックの良好な熱放出によりチップ動
作の際に、発生する熱が容易に放出され熱適応力が低下
されるためチップの寿命を延長させうる。 【００１７】以下、図４乃至図８を参照して、前述の単
一層セラミック基板を用いたＣＳＰ半導体を組み立てる
過程を説明する。 【００１８】先ず、図４に示すように、基板２２の上面
２２ｂにＬＯＣ付着用テープ２３を付着するが、中央に
形成されたスロット２２ａの両側に各々取り付ける。 【００１９】次に、図５に示すように、基板２２のスロ
ット２２ａの上部にチップ２１の中心が整列されるよう
に、テープ２３上にチップ２１を装着させる。 【００２０】次に、図６に示すように、基板２２の中央
スロット２２ａから見えるチップ２１に配列されている
ワイヤボンディングパッドと基板２２の下面２２ｃに露
出された信号回路３０のワイヤボンディング部（点線で
表示された部分）をワイヤ２４で接続する。（なお、図
６より、基板下面２２ｃを上側にして図示してある。） 【００２１】次に、ワイヤボンディングが完了された
後、図８に示すように、エポキシ系樹脂のようなコーテ
ィング溶液を注入しアンダーフィルコーティング部２６
を形成する。この際、前記溶液は毛細管現象でチップ２
１と基板２２が形成した狭い隙間内に自然に充填され
る。注入される前記溶液の量はチップ２１の先端まで完
全に詰め込まれるように調節する。前記アンダーフィル
溶液の充填が完了された後には硬化させるためにキュア
リング（Ｃｕｒｉｎｇ）を実施する。その結果、従来の
ＣＳＰ半導体でのモールディング作業が省略され、モー
ルディング作業中に生じるパッケージ内部の空洞部の発
生及び基板での変形問題が除去される効果がある。前記
効果は、前述のように、チップと基板（サブストレー
ト）との間に形成された隙間に毛細管現現象を利用して
コーティング溶液を自然に充填することにより達成され
うるものである。 【００２２】次に、前述の工程が完了された製品は基板
２２の下面２２ｃの信号回路３０の端部に形成された複
数のボール装着部３１を溶剤（ｆｌｕｘ）で処理し、図
８に示すように、ボール装着部３１上にボール２５をの
せておき、赤外線加熱装置などで加熱してボール２５を
装着する。 【００２３】以上、各々の段階を経て一個の本発明に係
るＣＳＰ半導体が組み立てられる過程を説明したが、前
述のセラミック基板をマルチ（ｍｕｌｔｉ）基板形態に
製作して前述の組み立て段階でＣＳＰ半導体組立作業を
遂行した後、既形成された切断線に沿って切断すると、
単一ＣＳＰ半導体の大量生産が可能となる。その結果、
ＣＳＰ半導体組立工程全体の生産性及び作業性を向上さ
せることができる。 【００２４】以上、本発明は前記実施の形態に限定され
るものではなく、その要旨を逸脱しない範囲で各種変更
可能である。 【００２５】 【発明の効果】本発明は、従来のパッケージより信頼性
を向上させつつ、より厚さが薄いパッケージが得られ、
かつ熱放出能力が向上されることにより寿命が延長し、
製造工程の短縮、製造費用の節減、作業性及び生産性を
向上させる効果がある。
【図面の簡単な説明】 【図１】従来のチップサイズ半導体を示す断面図であ
る。 【図２】本発明に係るチップサイズパッケージを示す斜
視図（Ａ）及び断面図（Ｂ）である。 【図３】本発明に係るチップサイズパッケージ半導体の
基板を示す側面図（Ａ）、上部平面図（Ｂ）及び下部平
面図（Ｃ）である。 【図４】図３の基板上部にＬＯＣ付着用テープが取り付
けられた組み立て状態を示す断面図（Ａ）及び平面図
（Ｂ）である。 【図５】図４の組み立て状態でテープ上にチップが設置
された組み立て状態を示す断面図（Ａ）及び平面図
（Ｂ）である。 【図６】図５の組み立て状態で基板とチップとの間をワ
イヤで接続した組み立て状態を示す断面図（Ａ）及び平
面図（Ｂ）である。 【図７】図６の組み立て状態でアンダーフィル（ｕｎｄ
ｅｒ−ｆｉｌｌ）溶液でコーティングした状態を示す断
面図（Ａ）及び平面図（Ｂ）である。 【図８】図７の組み立て状態で基板下面ボール装着部に
ボールが装着され組み立て完了された状態を示す断面図
（Ａ）及び平面図（Ｂ）である。 【符号の説明】 ２１ チップ ２２ 基板 ２２ａ スロット ２２ｂ 基板上面 ２２ｃ 基板下面 ２３ テープ ２４ ワイヤ ２５ ボール，ボール部材 ２６ アンダーフィルコーティング部 ３０ 信号回路 ３１ ボール装着部
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/12 501 H01L 23/12 H01L 21/60 301 H01L 23/15

Claims (1)

  1. (57)【特許請求の範囲】 【請求項１】 下面中央部を縦断するように列を成す点
    線状に多数のワイヤボンディングパッドが形成されたチ
    ップと、 前記チップの下面側にその上面が位置するようにチップ
    と平行に配置され、前記多数のワイヤボンディングパッ
    ドを囲むことが可能なサイズで上下面を貫通する長方形
    状のスロットが中央部に設けられ、下面にのみ信号回路
    パターンが形成された単一層のセラミック板材からなる
    基板と、 前記ワイヤボンディングパッドが前記スロット中央部の
    上方位置に整列されるように前記チップを前記基板の上
    面に付着し固定するための付着部材と、 前記チップと前記基板を保持するための保持手段と、 前記基板の信号回路パターン上に装着され外部回路を形
    成する複数のボール部材と、を含み、 前記スロットを通じて、チップのワイヤボンディングパ
    ッドと基板の信号回路パターンとがワイヤにより相互接
    続され内部回路を形成するチップサイズパッケージ半導
    体であって、 前記基板の信号回路パターンが形成された面は、前記ワ
    イヤボンディング部とボール装着部とを除いた残り部分
    が誘電体物質で塗布されており、 前記付着部材は前記スロットの短辺長を超える幅を有す
    る付着用テープであり、スロットの長辺両側に長辺に沿
    ってそれぞれ同じ長さだけ基板上面に取り付けられてお
    り、 前記保持手段は、チップの先端まで完全に詰め込まれる
    ように調節された量のアンダーフィルコーティング用樹
    脂溶液を前記チップと前記基板との間に毛細管現象を利
    用し自然に充填した後、熱処理により充填された樹脂溶
    液をキュウアリングすることによって形成された ことを
    特徴とするチップサイズパッケージ半導体。
JP36412197A 1996-12-18 1997-12-17 チップサイズパッケージ半導体 Expired - Fee Related JP3491003B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1996P67617 1996-12-18
KR1019960067617A KR100248792B1 (ko) 1996-12-18 1996-12-18 단일층 세라믹 기판을 이용한 칩사이즈 패키지 반도체

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JPH10275880A JPH10275880A (ja) 1998-10-13
JP3491003B2 true JP3491003B2 (ja) 2004-01-26

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JP (1) JP3491003B2 (ja)
KR (1) KR100248792B1 (ja)
CN (1) CN1190795A (ja)
GB (1) GB2320616B (ja)

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GB9726869D0 (en) 1998-02-18
CN1190795A (zh) 1998-08-19
KR100248792B1 (ko) 2000-03-15
GB2320616B (en) 2002-01-16
JPH10275880A (ja) 1998-10-13
KR19980048962A (ko) 1998-09-15
GB2320616A (en) 1998-06-24
US5920118A (en) 1999-07-06

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