JP3336487B2 - 高周波トランジスタのゲート電極形成方法 - Google Patents

高周波トランジスタのゲート電極形成方法

Info

Publication number
JP3336487B2
JP3336487B2 JP04894095A JP4894095A JP3336487B2 JP 3336487 B2 JP3336487 B2 JP 3336487B2 JP 04894095 A JP04894095 A JP 04894095A JP 4894095 A JP4894095 A JP 4894095A JP 3336487 B2 JP3336487 B2 JP 3336487B2
Authority
JP
Japan
Prior art keywords
electrode
opening
forming
leg
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04894095A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08203933A (ja
Inventor
智幸 神山
大和 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Original Assignee
Honda Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Priority to JP04894095A priority Critical patent/JP3336487B2/ja
Priority to US08/588,636 priority patent/US5776820A/en
Priority to DE69637850T priority patent/DE69637850D1/de
Priority to EP96101083A priority patent/EP0724288B1/en
Publication of JPH08203933A publication Critical patent/JPH08203933A/ja
Application granted granted Critical
Publication of JP3336487B2 publication Critical patent/JP3336487B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP04894095A 1995-01-30 1995-01-30 高周波トランジスタのゲート電極形成方法 Expired - Fee Related JP3336487B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP04894095A JP3336487B2 (ja) 1995-01-30 1995-01-30 高周波トランジスタのゲート電極形成方法
US08/588,636 US5776820A (en) 1995-01-30 1996-01-19 Method of forming a high-frequency transistor T gate electrode
DE69637850T DE69637850D1 (de) 1995-01-30 1996-01-25 Verfahren zur Herstellung einer Gate-Elektrode für Hochfrequenz-Transistoren
EP96101083A EP0724288B1 (en) 1995-01-30 1996-01-25 Method of forming a high-frequency transistor gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04894095A JP3336487B2 (ja) 1995-01-30 1995-01-30 高周波トランジスタのゲート電極形成方法

Publications (2)

Publication Number Publication Date
JPH08203933A JPH08203933A (ja) 1996-08-09
JP3336487B2 true JP3336487B2 (ja) 2002-10-21

Family

ID=12817279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04894095A Expired - Fee Related JP3336487B2 (ja) 1995-01-30 1995-01-30 高周波トランジスタのゲート電極形成方法

Country Status (4)

Country Link
US (1) US5776820A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0724288B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3336487B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69637850D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939249A (en) * 1997-06-24 1999-08-17 Imation Corp. Photothermographic element with iridium and copper doped silver halide grains
FR2769129A1 (fr) * 1997-09-30 1999-04-02 Thomson Csf Procede de realisation de transistor a effet de champ
DE102013006624B3 (de) * 2013-04-18 2014-05-28 Forschungszentrum Jülich GmbH Hochfrequenzleiter mit verbesserter Leitfähigkeit und Verfahren seiner Herstellung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994758A (en) * 1973-03-19 1976-11-30 Nippon Electric Company, Ltd. Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles
US4700462A (en) * 1986-10-08 1987-10-20 Hughes Aircraft Company Process for making a T-gated transistor
JPH02103939A (ja) * 1988-10-12 1990-04-17 Mitsubishi Electric Corp 半導体装置の製造方法
JP2550412B2 (ja) * 1989-05-15 1996-11-06 ローム株式会社 電界効果トランジスタの製造方法
JPH0355852A (ja) * 1989-07-25 1991-03-11 Sony Corp 半導体装置の製造方法
JPH0653242A (ja) * 1992-07-27 1994-02-25 Rohm Co Ltd 半導体装置の製法
JPH0653244A (ja) * 1992-07-27 1994-02-25 Rohm Co Ltd 半導体装置の製法
KR0135024B1 (en) * 1994-11-15 1998-04-20 Korea Electronics Telecomm Fabrication method of self-aligned t-gare gaas metal semiconductor field effect transistor

Also Published As

Publication number Publication date
EP0724288A2 (en) 1996-07-31
US5776820A (en) 1998-07-07
JPH08203933A (ja) 1996-08-09
DE69637850D1 (de) 2009-04-16
EP0724288B1 (en) 2009-03-04
EP0724288A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-08-21

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