JP3296708B2 - 金属導電体用多層Ａｌ合金構造 - Google Patents

金属導電体用多層Ａｌ合金構造

Info

Publication number
JP3296708B2
JP3296708B2 JP33625595A JP33625595A JP3296708B2 JP 3296708 B2 JP3296708 B2 JP 3296708B2 JP 33625595 A JP33625595 A JP 33625595A JP 33625595 A JP33625595 A JP 33625595A JP 3296708 B2 JP3296708 B2 JP 3296708B2
Authority
JP
Japan
Prior art keywords
layer
element layer
alloy
barrier
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33625595A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08236707A (ja
Inventor
アン ボーリンガー チェリル
アラン デイン エドワード
マンシン マーチャント サイレッシュ
クマー ナンダ アラン
クマー ロイ プラディップ
ウォルター ウィルキンス，ジュニヤ クレタス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of JPH08236707A publication Critical patent/JPH08236707A/ja
Application granted granted Critical
Publication of JP3296708B2 publication Critical patent/JP3296708B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP33625595A 1994-12-29 1995-12-25 金属導電体用多層Ａｌ合金構造 Expired - Fee Related JP3296708B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/365652 1994-12-29
US08/365,652 US5561083A (en) 1994-12-29 1994-12-29 Method of making multilayered Al-alloy structure for metal conductors

Publications (2)

Publication Number Publication Date
JPH08236707A JPH08236707A (ja) 1996-09-13
JP3296708B2 true JP3296708B2 (ja) 2002-07-02

Family

ID=23439761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33625595A Expired - Fee Related JP3296708B2 (ja) 1994-12-29 1995-12-25 金属導電体用多層Ａｌ合金構造

Country Status (6)

Country Link
US (2) US5561083A (enExample)
EP (1) EP0720231A3 (enExample)
JP (1) JP3296708B2 (enExample)
KR (1) KR960026410A (enExample)
SG (1) SG34348A1 (enExample)
TW (1) TW298675B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW520072U (en) * 1991-07-08 2003-02-01 Samsung Electronics Co Ltd A semiconductor device having a multi-layer metal contact
JP3744980B2 (ja) * 1995-07-27 2006-02-15 株式会社半導体エネルギー研究所 半導体装置
SG55246A1 (en) * 1995-12-29 1998-12-21 Ibm Aluminum alloy for the damascene process for on-chip wiring applications
US5663108A (en) * 1996-06-13 1997-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Optimized metal pillar via process
JPH1027797A (ja) * 1996-07-10 1998-01-27 Oki Electric Ind Co Ltd Ａｌ／Ｔｉ積層配線およびその形成方法
KR100415095B1 (ko) * 1996-11-27 2004-03-31 주식회사 하이닉스반도체 반도체소자의제조방법
US5943601A (en) * 1997-04-30 1999-08-24 International Business Machines Corporation Process for fabricating a metallization structure
DE19734434C1 (de) * 1997-08-08 1998-12-10 Siemens Ag Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
JP3500308B2 (ja) 1997-08-13 2004-02-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路
US6255688B1 (en) * 1997-11-21 2001-07-03 Agere Systems Guardian Corp. Capacitor having aluminum alloy bottom plate
US6380627B1 (en) * 1998-06-26 2002-04-30 The Regents Of The University Of California Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication
US6100195A (en) * 1998-12-28 2000-08-08 Chartered Semiconductor Manu. Ltd. Passivation of copper interconnect surfaces with a passivating metal layer
US6320265B1 (en) * 1999-04-12 2001-11-20 Lucent Technologies Inc. Semiconductor device with high-temperature ohmic contact and method of forming the same
US7230316B2 (en) 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
US7538401B2 (en) 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
DE102016101801B4 (de) * 2016-02-02 2021-01-14 Infineon Technologies Ag Lastanschluss eines leistungshalbleiterbauelements, leistungshalbleitermodul damit und herstellungsverfahren dafür
KR20190001445U (ko) 2017-12-08 2019-06-18 최재양 삽입식 샤워기 홀더

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132056A (en) * 1979-04-03 1980-10-14 Toshiba Corp Semiconductor device
US4373966A (en) * 1981-04-30 1983-02-15 International Business Machines Corporation Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
US4517225A (en) * 1983-05-02 1985-05-14 Signetics Corporation Method for manufacturing an electrical interconnection by selective tungsten deposition
US4673623A (en) * 1985-05-06 1987-06-16 The Board Of Trustees Of The Leland Stanford Junior University Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects
US4910580A (en) * 1987-08-27 1990-03-20 Siemens Aktiengesellschaft Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy
US4987562A (en) * 1987-08-28 1991-01-22 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
JPH01185948A (ja) * 1988-01-21 1989-07-25 Seiko Epson Corp 半導体装置
KR920005701B1 (ko) * 1989-07-20 1992-07-13 현대전자산업 주식회사 반도체 집적회로 내의 소자 연결용 금속배선층 및 그 제조방법
JPH04363024A (ja) * 1990-11-30 1992-12-15 Toshiba Corp 半導体装置の製造方法
US5345108A (en) * 1991-02-26 1994-09-06 Nec Corporation Semiconductor device having multi-layer electrode wiring
DE4200809C2 (de) * 1991-03-20 1996-12-12 Samsung Electronics Co Ltd Verfahren zur Bildung einer metallischen Verdrahtungsschicht in einem Halbleiterbauelement
KR940004256B1 (en) * 1991-04-09 1994-05-19 Samsung Electronics Co Ltd Making method of semiconductor device
TW520072U (en) * 1991-07-08 2003-02-01 Samsung Electronics Co Ltd A semiconductor device having a multi-layer metal contact
FR2678818B1 (fr) * 1991-07-11 1995-07-13 Olivier Ets Georges Dispositif arrache-fils pour semelle de suceur d'aspirateur.
KR960010056B1 (ko) * 1992-12-10 1996-07-25 삼성전자 주식회사 반도체장치 및 그 제조 방법
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process
US5360995A (en) * 1993-09-14 1994-11-01 Texas Instruments Incorporated Buffered capped interconnect for a semiconductor device
US5444022A (en) * 1993-12-29 1995-08-22 Intel Corporation Method of fabricating an interconnection structure for an integrated circuit
US5523259A (en) * 1994-12-05 1996-06-04 At&T Corp. Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer

Also Published As

Publication number Publication date
KR960026410A (ko) 1996-07-22
US5561083A (en) 1996-10-01
JPH08236707A (ja) 1996-09-13
TW298675B (enExample) 1997-02-21
US5641994A (en) 1997-06-24
EP0720231A3 (en) 1996-12-11
EP0720231A2 (en) 1996-07-03
SG34348A1 (en) 1996-12-06

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