JPH0479146B2 - - Google Patents

Info

Publication number
JPH0479146B2
JPH0479146B2 JP57210158A JP21015882A JPH0479146B2 JP H0479146 B2 JPH0479146 B2 JP H0479146B2 JP 57210158 A JP57210158 A JP 57210158A JP 21015882 A JP21015882 A JP 21015882A JP H0479146 B2 JPH0479146 B2 JP H0479146B2
Authority
JP
Japan
Prior art keywords
layer
wiring
silicon
alloy
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57210158A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59100565A (ja
Inventor
Ichiro Fujita
Akira Oooka
Hideaki Ootake
Tooru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57210158A priority Critical patent/JPS59100565A/ja
Publication of JPS59100565A publication Critical patent/JPS59100565A/ja
Publication of JPH0479146B2 publication Critical patent/JPH0479146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57210158A 1982-11-30 1982-11-30 半導体装置 Granted JPS59100565A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57210158A JPS59100565A (ja) 1982-11-30 1982-11-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57210158A JPS59100565A (ja) 1982-11-30 1982-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS59100565A JPS59100565A (ja) 1984-06-09
JPH0479146B2 true JPH0479146B2 (enExample) 1992-12-15

Family

ID=16584720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57210158A Granted JPS59100565A (ja) 1982-11-30 1982-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS59100565A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190445A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置
JPS63129662A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置
JPH02159064A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH04186728A (ja) * 1990-11-20 1992-07-03 Nec Corp 半導体集積回路装置
JP7027066B2 (ja) 2017-08-24 2022-03-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821821B2 (ja) * 1975-12-15 1983-05-04 富士通株式会社 ハンドウタイソウチノデンキヨクケイセイホウホウ

Also Published As

Publication number Publication date
JPS59100565A (ja) 1984-06-09

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