JPS59100565A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59100565A
JPS59100565A JP57210158A JP21015882A JPS59100565A JP S59100565 A JPS59100565 A JP S59100565A JP 57210158 A JP57210158 A JP 57210158A JP 21015882 A JP21015882 A JP 21015882A JP S59100565 A JPS59100565 A JP S59100565A
Authority
JP
Japan
Prior art keywords
layer
wiring
alloy
aluminum
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57210158A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0479146B2 (enExample
Inventor
Ichiro Fujita
藤田　一朗
Akira Ooka
大岡　章
Hideaki Otake
秀明 大竹
Toru Takeuchi
竹内　透
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57210158A priority Critical patent/JPS59100565A/ja
Publication of JPS59100565A publication Critical patent/JPS59100565A/ja
Publication of JPH0479146B2 publication Critical patent/JPH0479146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57210158A 1982-11-30 1982-11-30 半導体装置 Granted JPS59100565A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57210158A JPS59100565A (ja) 1982-11-30 1982-11-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57210158A JPS59100565A (ja) 1982-11-30 1982-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS59100565A true JPS59100565A (ja) 1984-06-09
JPH0479146B2 JPH0479146B2 (enExample) 1992-12-15

Family

ID=16584720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57210158A Granted JPS59100565A (ja) 1982-11-30 1982-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS59100565A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190445A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置
JPS63129662A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置
JPH02159064A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH04186728A (ja) * 1990-11-20 1992-07-03 Nec Corp 半導体集積回路装置
JP2019040975A (ja) * 2017-08-24 2019-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272570A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Formation of electrode of semiconductor deviced

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272570A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Formation of electrode of semiconductor deviced

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190445A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置
JPS63129662A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置
JPH02159064A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH04186728A (ja) * 1990-11-20 1992-07-03 Nec Corp 半導体集積回路装置
JP2019040975A (ja) * 2017-08-24 2019-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11652072B2 (en) 2017-08-24 2023-05-16 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0479146B2 (enExample) 1992-12-15

Similar Documents

Publication Publication Date Title
US4087314A (en) Bonding pedestals for semiconductor devices
US5266521A (en) Method for forming a planarized composite metal layer in a semiconductor device
JPH06140399A (ja) 金配線の製造方法
JPH02341A (ja) 半導体装置及びその製造方法
JP3296708B2 (ja) 金属導電体用多層Ａｌ合金構造
JPH05343404A (ja) 半導体装置
US4999160A (en) Aluminum alloy containing copper, silicon and titanium for VLSI devices
US4022931A (en) Process for making semiconductor device
JPS59100565A (ja) 半導体装置
JPS62235451A (ja) 半導体配線材料用Ａｌ合金
JP3357700B2 (ja) 半導体装置の製造方法
JPH0418760A (ja) 半導体装置
JPS62235454A (ja) 半導体配線材料用Ｎ含有Ａｌ合金
JPH0448854B2 (enExample)
JPH0448855B2 (enExample)
KR100316030B1 (ko) 반도체장치의알루미늄배선형성방법
JP2949752B2 (ja) 配線体とその形成方法
JP2723023B2 (ja) 半導体装置およびその製造方法
JPS62235453A (ja) 半導体配線材料用Ｃ含有Ａｌ合金
TWI253711B (en) Elimination of CuAl2 from aluminum based metallization features on an integrated circuit chip
JPH0817175B2 (ja) 半導体装置
JP2754653B2 (ja) アルミニウム配線形成方法
JPH05175346A (ja) 配線およびその形成方法
JPS6388843A (ja) 半導体装置
JPS61224415A (ja) 半導体装置の製造方法