JP3226650B2 - 横型二重拡散絶縁ゲート電界効果トランジスタ及びその製造方法 - Google Patents

横型二重拡散絶縁ゲート電界効果トランジスタ及びその製造方法

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Publication number
JP3226650B2
JP3226650B2 JP02957593A JP2957593A JP3226650B2 JP 3226650 B2 JP3226650 B2 JP 3226650B2 JP 02957593 A JP02957593 A JP 02957593A JP 2957593 A JP2957593 A JP 2957593A JP 3226650 B2 JP3226650 B2 JP 3226650B2
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JP
Japan
Prior art keywords
region
conductivity type
drift region
layer
thin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02957593A
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English (en)
Japanese (ja)
Other versions
JPH05343675A (ja
Inventor
− クウォング クウォン オウ
アール．エフランド テイラー
マルヒ サットウィンダー
タング ヌグ ウェイ
Original Assignee
テキサス インスツルメンツ インコーポレイテツド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by テキサス インスツルメンツ インコーポレイテツド filed Critical テキサス インスツルメンツ インコーポレイテツド
Publication of JPH05343675A publication Critical patent/JPH05343675A/ja
Application granted granted Critical
Publication of JP3226650B2 publication Critical patent/JP3226650B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP02957593A 1991-12-30 1993-01-04 横型二重拡散絶縁ゲート電界効果トランジスタ及びその製造方法 Expired - Fee Related JP3226650B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US815732 1991-12-30
US07/815,732 US5306652A (en) 1991-12-30 1991-12-30 Lateral double diffused insulated gate field effect transistor fabrication process

Publications (2)

Publication Number Publication Date
JPH05343675A JPH05343675A (ja) 1993-12-24
JP3226650B2 true JP3226650B2 (ja) 2001-11-05

Family

ID=25218688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02957593A Expired - Fee Related JP3226650B2 (ja) 1991-12-30 1993-01-04 横型二重拡散絶縁ゲート電界効果トランジスタ及びその製造方法

Country Status (6)

Country Link
US (3) US5306652A (cs)
EP (1) EP0550015B1 (cs)
JP (1) JP3226650B2 (cs)
KR (1) KR100292567B1 (cs)
DE (1) DE69218747T2 (cs)
TW (1) TW273040B (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022138544A1 (ja) 2020-12-21 2022-06-30 凸版印刷株式会社 簡易組み立てベッド、多目的テーブルおよび搬送軽量ボード

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WO2022138544A1 (ja) 2020-12-21 2022-06-30 凸版印刷株式会社 簡易組み立てベッド、多目的テーブルおよび搬送軽量ボード

Also Published As

Publication number Publication date
KR100292567B1 (ko) 2001-09-17
US5578514A (en) 1996-11-26
EP0550015A1 (en) 1993-07-07
DE69218747T2 (de) 1997-07-10
JPH05343675A (ja) 1993-12-24
DE69218747D1 (de) 1997-05-07
KR930015099A (ko) 1993-07-23
US5406110A (en) 1995-04-11
US5306652A (en) 1994-04-26
EP0550015B1 (en) 1997-04-02
TW273040B (cs) 1996-03-21

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