JP3182762B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JP3182762B2
JP3182762B2 JP51285391A JP51285391A JP3182762B2 JP 3182762 B2 JP3182762 B2 JP 3182762B2 JP 51285391 A JP51285391 A JP 51285391A JP 51285391 A JP51285391 A JP 51285391A JP 3182762 B2 JP3182762 B2 JP 3182762B2
Authority
JP
Japan
Prior art keywords
wiring
power supply
layer
semiconductor integrated
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP51285391A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO1992002043A1 (ja
Inventor
稔 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of JPWO1992002043A1 publication Critical patent/JPWO1992002043A1/ja
Application granted granted Critical
Publication of JP3182762B2 publication Critical patent/JP3182762B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dram (AREA)
JP51285391A 1990-07-23 1991-07-19 半導体集積回路装置 Expired - Fee Related JP3182762B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-194237 1990-07-23
JP19423790 1990-07-23

Publications (2)

Publication Number Publication Date
JPWO1992002043A1 JPWO1992002043A1 (ja) 1992-08-06
JP3182762B2 true JP3182762B2 (ja) 2001-07-03

Family

ID=16321260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51285391A Expired - Fee Related JP3182762B2 (ja) 1990-07-23 1991-07-19 半導体集積回路装置

Country Status (6)

Country Link
US (1) US5378925A (Direct)
EP (1) EP0493615B1 (Direct)
JP (1) JP3182762B2 (Direct)
KR (1) KR100247267B1 (Direct)
DE (1) DE69129445T2 (Direct)
WO (1) WO1992002043A1 (Direct)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4027438B2 (ja) 1995-05-25 2007-12-26 三菱電機株式会社 半導体装置
KR0172426B1 (ko) * 1995-12-21 1999-03-30 김광호 반도체 메모리장치
US5808900A (en) * 1996-04-30 1998-09-15 Lsi Logic Corporation Memory having direct strap connection to power supply
JPH1092857A (ja) * 1996-09-10 1998-04-10 Mitsubishi Electric Corp 半導体パッケージ
US6344667B1 (en) * 1998-03-02 2002-02-05 Kabushiki Kaisha Toshiba Wiring board with reduced radiation of undesired electromagnetic waves
DE19906382A1 (de) 1999-02-16 2000-08-24 Siemens Ag Halbleiterspeicher mit Speicherbänken
JP3913927B2 (ja) * 1999-04-19 2007-05-09 富士通株式会社 半導体集積回路装置
KR100715970B1 (ko) * 2001-03-08 2007-05-08 삼성전자주식회사 메모리 모듈
US6598216B2 (en) 2001-08-08 2003-07-22 International Business Machines Corporation Method for enhancing a power bus in I/O regions of an ASIC device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840344B2 (ja) * 1980-06-10 1983-09-05 富士通株式会社 半導体記憶装置
JPS60182742A (ja) * 1984-02-29 1985-09-18 Fujitsu Ltd 集積回路
JPS61241964A (ja) * 1985-04-19 1986-10-28 Hitachi Ltd 半導体装置
JPS6344742A (ja) * 1986-08-12 1988-02-25 Fujitsu Ltd 半導体装置
JPS63199444A (ja) * 1987-02-16 1988-08-17 Oki Electric Ind Co Ltd 標準セル方式半導体装置
JPS63188949U (Direct) * 1987-05-27 1988-12-05
JP2606845B2 (ja) * 1987-06-19 1997-05-07 富士通株式会社 半導体集積回路
JPH02268439A (ja) * 1989-04-10 1990-11-02 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
KR920702552A (ko) 1992-09-04
DE69129445T2 (de) 1998-11-26
US5378925A (en) 1995-01-03
KR100247267B1 (ko) 2000-03-15
DE69129445D1 (de) 1998-06-25
EP0493615A1 (en) 1992-07-08
EP0493615B1 (en) 1998-05-20
EP0493615A4 (Direct) 1994-02-16
WO1992002043A1 (fr) 1992-02-06

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