JP2788889B2 - 半導体装置における分離形成方法 - Google Patents

半導体装置における分離形成方法

Info

Publication number
JP2788889B2
JP2788889B2 JP8038523A JP3852396A JP2788889B2 JP 2788889 B2 JP2788889 B2 JP 2788889B2 JP 8038523 A JP8038523 A JP 8038523A JP 3852396 A JP3852396 A JP 3852396A JP 2788889 B2 JP2788889 B2 JP 2788889B2
Authority
JP
Japan
Prior art keywords
film
forming
insulating film
semiconductor substrate
transition metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP8038523A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08264634A (ja
Inventor
パク サングフン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JPH08264634A publication Critical patent/JPH08264634A/ja
Application granted granted Critical
Publication of JP2788889B2 publication Critical patent/JP2788889B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W10/00—
    • H10W10/01—
    • H10W10/0148—
    • H10W10/018—
    • H10W10/10—
    • H10W10/17—

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP8038523A 1995-02-24 1996-02-26 半導体装置における分離形成方法 Expired - Fee Related JP2788889B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950003727A KR100190367B1 (ko) 1995-02-24 1995-02-24 소자분리막형성방법
KR1995-3727 1995-02-24

Publications (2)

Publication Number Publication Date
JPH08264634A JPH08264634A (ja) 1996-10-11
JP2788889B2 true JP2788889B2 (ja) 1998-08-20

Family

ID=19408771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8038523A Expired - Fee Related JP2788889B2 (ja) 1995-02-24 1996-02-26 半導体装置における分離形成方法

Country Status (5)

Country Link
US (1) US5668043A (OSRAM)
JP (1) JP2788889B2 (OSRAM)
KR (1) KR100190367B1 (OSRAM)
CN (1) CN1048821C (OSRAM)
TW (1) TW301022B (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW365047B (en) * 1996-10-04 1999-07-21 Winbond Electronics Corp Manufacturing method for simultaneously forming trenches of different depths
US6686283B1 (en) * 1999-02-05 2004-02-03 Texas Instruments Incorporated Shallow trench isolation planarization using self aligned isotropic etch
US6306723B1 (en) 2000-03-13 2001-10-23 Chartered Semiconductor Manufacturing Ltd. Method to form shallow trench isolations without a chemical mechanical polish
CN110223916B (zh) * 2019-05-06 2022-03-08 瑞声科技(新加坡)有限公司 一种硅晶片的加工方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766627A (en) * 1980-10-13 1982-04-22 Toshiba Corp Manufacture of semiconductor device
JPS5893220A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体単結晶膜の製造方法
JPH01321629A (ja) * 1988-06-23 1989-12-27 Nec Corp 薄膜形成方法
US5256591A (en) * 1991-01-07 1993-10-26 Gold Star Electron Co., Ltd. Method for forming isolation region in semiconductor device using trench

Also Published As

Publication number Publication date
JPH08264634A (ja) 1996-10-11
CN1134038A (zh) 1996-10-23
KR100190367B1 (ko) 1999-06-01
US5668043A (en) 1997-09-16
KR960032673A (ko) 1996-09-17
CN1048821C (zh) 2000-01-26
TW301022B (OSRAM) 1997-03-21

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