JP2754248B2 - 光起電力装置及びその製法 - Google Patents
光起電力装置及びその製法Info
- Publication number
- JP2754248B2 JP2754248B2 JP1210557A JP21055789A JP2754248B2 JP 2754248 B2 JP2754248 B2 JP 2754248B2 JP 1210557 A JP1210557 A JP 1210557A JP 21055789 A JP21055789 A JP 21055789A JP 2754248 B2 JP2754248 B2 JP 2754248B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gallium
- copper
- back contact
- interfacial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/247,802 US4915745A (en) | 1988-09-22 | 1988-09-22 | Thin film solar cell and method of making |
US247802 | 1994-05-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0294669A JPH0294669A (ja) | 1990-04-05 |
JP2754248B2 true JP2754248B2 (ja) | 1998-05-20 |
Family
ID=22936445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1210557A Expired - Lifetime JP2754248B2 (ja) | 1988-09-22 | 1989-08-15 | 光起電力装置及びその製法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4915745A (enrdf_load_stackoverflow) |
EP (1) | EP0360403B1 (enrdf_load_stackoverflow) |
JP (1) | JP2754248B2 (enrdf_load_stackoverflow) |
DE (1) | DE68919399T2 (enrdf_load_stackoverflow) |
Families Citing this family (157)
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US5436204A (en) * | 1993-04-12 | 1995-07-25 | Midwest Research Institute | Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications |
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US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
US5674555A (en) * | 1995-11-30 | 1997-10-07 | University Of Delaware | Process for preparing group Ib-IIIa-VIa semiconducting films |
DE19611996C1 (de) * | 1996-03-26 | 1997-09-11 | Siemens Solar Gmbh | Solarzelle mit einer Chalkopyritabsorberschicht und Verfahren zu ihrer Herstellung |
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JP3527815B2 (ja) * | 1996-11-08 | 2004-05-17 | 昭和シェル石油株式会社 | 薄膜太陽電池の透明導電膜の製造方法 |
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DE10004733C2 (de) * | 2000-01-28 | 2003-12-11 | Hahn Meitner Inst Berlin Gmbh | Dünnfilm-Halbleiterbauelement mit einer Chalkopyritschicht und Verfahren zu seiner Herstellung sowie Verwendung des Verfahrens zur Herstellung einer Dünnfilm-Solarzelle |
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DE10127255A1 (de) * | 2001-06-05 | 2003-01-16 | Univ Stuttgart | Konditionierung von Glasoberflächen für den Transfer von CIGS-Solarzellen auf flexible Kunstoffsubstrate |
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JP4320525B2 (ja) * | 2002-03-25 | 2009-08-26 | 本田技研工業株式会社 | 光吸収層の作製方法および装置 |
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1988
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- 1989-08-09 EP EP89308108A patent/EP0360403B1/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
DE68919399T2 (de) | 1995-05-04 |
US4915745A (en) | 1990-04-10 |
EP0360403B1 (en) | 1994-11-17 |
DE68919399D1 (de) | 1994-12-22 |
US4915745B1 (enrdf_load_stackoverflow) | 1992-04-07 |
EP0360403A2 (en) | 1990-03-28 |
JPH0294669A (ja) | 1990-04-05 |
EP0360403A3 (en) | 1990-11-28 |
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