JP2679639B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JP2679639B2 JP2679639B2 JP6217351A JP21735194A JP2679639B2 JP 2679639 B2 JP2679639 B2 JP 2679639B2 JP 6217351 A JP6217351 A JP 6217351A JP 21735194 A JP21735194 A JP 21735194A JP 2679639 B2 JP2679639 B2 JP 2679639B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- semiconductor film
- polycrystalline
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 161
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims description 93
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 178
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 63
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 229910052814 silicon oxide Inorganic materials 0.000 description 29
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical class N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241000238558 Eucarida Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6217351A JP2679639B2 (ja) | 1994-09-12 | 1994-09-12 | 半導体装置及びその製造方法 |
| EP95114238A EP0701287B1 (en) | 1994-09-12 | 1995-09-11 | Bipolar transistor free from leakage current across thin base region and process of fabrication thereof |
| DE69508506T DE69508506T2 (de) | 1994-09-12 | 1995-09-11 | Bipolartransistor ohne Leckstrom durch das dünne Basisgebiet und Verfahren zur Herstellung |
| KR1019950029729A KR0180325B1 (ko) | 1994-09-12 | 1995-09-12 | 얇은 베이스영역에 누설전류가 흐르지 않는 바이폴라 트랜지스터를 갖는 반도체장치 및 그 제조방법 |
| US08/526,893 US5698890A (en) | 1994-09-12 | 1995-09-12 | Semiconductor device having bipolar transistor free from leakage current across thin base region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6217351A JP2679639B2 (ja) | 1994-09-12 | 1994-09-12 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0883805A JPH0883805A (ja) | 1996-03-26 |
| JP2679639B2 true JP2679639B2 (ja) | 1997-11-19 |
Family
ID=16702817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6217351A Expired - Fee Related JP2679639B2 (ja) | 1994-09-12 | 1994-09-12 | 半導体装置及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5698890A (OSRAM) |
| EP (1) | EP0701287B1 (OSRAM) |
| JP (1) | JP2679639B2 (OSRAM) |
| KR (1) | KR0180325B1 (OSRAM) |
| DE (1) | DE69508506T2 (OSRAM) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2746225B2 (ja) * | 1995-10-16 | 1998-05-06 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| EP0818829A1 (en) * | 1996-07-12 | 1998-01-14 | Hitachi, Ltd. | Bipolar transistor and method of fabricating it |
| JPH11126781A (ja) * | 1997-10-24 | 1999-05-11 | Nec Corp | 半導体装置及びその製造方法 |
| US6143655A (en) | 1998-02-25 | 2000-11-07 | Micron Technology, Inc. | Methods and structures for silver interconnections in integrated circuits |
| US6121126A (en) | 1998-02-25 | 2000-09-19 | Micron Technologies, Inc. | Methods and structures for metal interconnections in integrated circuits |
| US6492694B2 (en) | 1998-02-27 | 2002-12-10 | Micron Technology, Inc. | Highly conductive composite polysilicon gate for CMOS integrated circuits |
| US6815303B2 (en) * | 1998-04-29 | 2004-11-09 | Micron Technology, Inc. | Bipolar transistors with low-resistance emitter contacts |
| FR2779572B1 (fr) * | 1998-06-05 | 2003-10-17 | St Microelectronics Sa | Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant |
| JP3329762B2 (ja) | 1999-04-27 | 2002-09-30 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6521974B1 (en) * | 1999-10-14 | 2003-02-18 | Hitachi, Ltd. | Bipolar transistor and manufacturing method thereof |
| US6573539B2 (en) * | 2000-01-10 | 2003-06-03 | International Business Machines Corporation | Heterojunction bipolar transistor with silicon-germanium base |
| US6531369B1 (en) * | 2000-03-01 | 2003-03-11 | Applied Micro Circuits Corporation | Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe) |
| US6509242B2 (en) * | 2001-01-12 | 2003-01-21 | Agere Systems Inc. | Heterojunction bipolar transistor |
| US6770134B2 (en) * | 2001-05-24 | 2004-08-03 | Applied Materials, Inc. | Method for fabricating waveguides |
| US6905542B2 (en) * | 2001-05-24 | 2005-06-14 | Arkadii V. Samoilov | Waveguides such as SiGeC waveguides and method of fabricating the same |
| WO2002099890A1 (en) * | 2001-06-05 | 2002-12-12 | Sony Corporation | Semiconductor layer and forming method therefor, and semiconductor device and production method therefor |
| US6967144B1 (en) | 2001-06-20 | 2005-11-22 | National Semiconductor Corporation | Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base |
| JP4168615B2 (ja) * | 2001-08-28 | 2008-10-22 | ソニー株式会社 | 半導体装置および半導体装置の製造方法 |
| FR2829288A1 (fr) * | 2001-09-06 | 2003-03-07 | St Microelectronics Sa | Structure de contact sur une region profonde formee dans un substrat semiconducteur |
| DE10164176B4 (de) * | 2001-12-27 | 2007-12-27 | Austriamicrosystems Ag | Bipolartransistor |
| US6867477B2 (en) * | 2002-11-07 | 2005-03-15 | Newport Fab, Llc | High gain bipolar transistor |
| US7038298B2 (en) * | 2003-06-24 | 2006-05-02 | International Business Machines Corporation | High fT and fmax bipolar transistor and method of making same |
| US6888221B1 (en) | 2004-04-14 | 2005-05-03 | International Business Machines Corporation | BICMOS technology on SIMOX wafers |
| EP1878045A2 (en) * | 2005-04-28 | 2008-01-16 | Nxp B.V. | Bipolar transistor and method of fabricating the same |
| US8435873B2 (en) | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
| JP2009043866A (ja) * | 2007-08-08 | 2009-02-26 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| DE102020118776B4 (de) | 2019-10-31 | 2025-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bipolartransistor (bjt) mit einem dielektrischen mehrschichtbasisfilm |
| US11183587B2 (en) * | 2019-10-31 | 2021-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bipolar junction transistor (BJT) comprising a multilayer base dielectric film |
| CN111739939B (zh) * | 2020-07-06 | 2024-12-06 | 重庆邮电大学 | 一种高频硅锗异质结双极晶体管及其制造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296391A (en) * | 1982-03-24 | 1994-03-22 | Nec Corporation | Method of manufacturing a bipolar transistor having thin base region |
| JPH0666318B2 (ja) * | 1985-08-20 | 1994-08-24 | 富士通株式会社 | ヘテロ接合バイポ−ラ半導体装置 |
| JPS63308377A (ja) * | 1987-06-10 | 1988-12-15 | Fujitsu Ltd | バイポ−ラトランジスタの製造方法 |
| JP2522384B2 (ja) * | 1989-03-07 | 1996-08-07 | 日本電気株式会社 | 化合物半導体バイポ―ラトランジスタ |
| US5017990A (en) * | 1989-12-01 | 1991-05-21 | International Business Machines Corporation | Raised base bipolar transistor structure and its method of fabrication |
| JP2705344B2 (ja) * | 1990-04-13 | 1998-01-28 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2855908B2 (ja) * | 1991-09-05 | 1999-02-10 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US5321301A (en) * | 1992-04-08 | 1994-06-14 | Nec Corporation | Semiconductor device |
| JPH0793315B2 (ja) * | 1992-11-27 | 1995-10-09 | 日本電気株式会社 | 半導体装置およびその製造方法 |
-
1994
- 1994-09-12 JP JP6217351A patent/JP2679639B2/ja not_active Expired - Fee Related
-
1995
- 1995-09-11 EP EP95114238A patent/EP0701287B1/en not_active Expired - Lifetime
- 1995-09-11 DE DE69508506T patent/DE69508506T2/de not_active Expired - Fee Related
- 1995-09-12 US US08/526,893 patent/US5698890A/en not_active Expired - Fee Related
- 1995-09-12 KR KR1019950029729A patent/KR0180325B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR0180325B1 (ko) | 1999-03-20 |
| US5698890A (en) | 1997-12-16 |
| DE69508506T2 (de) | 1999-10-21 |
| EP0701287A3 (OSRAM) | 1996-03-27 |
| DE69508506D1 (de) | 1999-04-29 |
| KR960012555A (ko) | 1996-04-20 |
| JPH0883805A (ja) | 1996-03-26 |
| EP0701287B1 (en) | 1999-03-24 |
| EP0701287A2 (en) | 1996-03-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |