JP2564712B2 - 半導体メモリ装置の製造方法 - Google Patents
半導体メモリ装置の製造方法Info
- Publication number
- JP2564712B2 JP2564712B2 JP3148392A JP14839291A JP2564712B2 JP 2564712 B2 JP2564712 B2 JP 2564712B2 JP 3148392 A JP3148392 A JP 3148392A JP 14839291 A JP14839291 A JP 14839291A JP 2564712 B2 JP2564712 B2 JP 2564712B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- impurity diffusion
- diffusion region
- region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000012535 impurity Substances 0.000 claims description 108
- 238000009792 diffusion process Methods 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 44
- 230000002093 peripheral effect Effects 0.000 claims description 36
- 125000006850 spacer group Chemical group 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910004394A KR940000510B1 (ko) | 1991-03-20 | 1991-03-20 | 반도체 메모리장치 및 그 제조방법 |
| KR4394 | 1991-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04320059A JPH04320059A (ja) | 1992-11-10 |
| JP2564712B2 true JP2564712B2 (ja) | 1996-12-18 |
Family
ID=19312269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3148392A Expired - Lifetime JP2564712B2 (ja) | 1991-03-20 | 1991-06-20 | 半導体メモリ装置の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2564712B2 (fr) |
| KR (1) | KR940000510B1 (fr) |
| DE (1) | DE4117703C2 (fr) |
| FR (1) | FR2674373B1 (fr) |
| GB (1) | GB2253937B (fr) |
| IT (1) | IT1247968B (fr) |
| TW (1) | TW199236B (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258671B1 (en) | 1997-05-13 | 2001-07-10 | Micron Technology, Inc. | Methods of providing spacers over conductive line sidewalls, methods of forming sidewall spacers over etched line sidewalls, and methods of forming conductive lines |
| DE10121011B4 (de) * | 2001-04-28 | 2004-11-04 | Infineon Technologies Ag | Verfahren zur maskenlosen Kontaktlochdotierung bei DRAMs/eDRAMs und entsprechend hergestellter Speicherchip |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364075A (en) * | 1980-09-02 | 1982-12-14 | Intel Corporation | CMOS Dynamic RAM cell and method of fabrication |
| JPS60164570A (ja) * | 1984-02-06 | 1985-08-27 | 株式会社東芝 | 扉ロツク装置 |
| JPS61156962A (ja) * | 1984-12-27 | 1986-07-16 | Nec Corp | 構内電子交換システム |
| JPS61156862A (ja) * | 1984-12-28 | 1986-07-16 | Toshiba Corp | 半導体記憶装置 |
| JPS61218165A (ja) * | 1985-03-25 | 1986-09-27 | Hitachi Ltd | 半導体記憶装置及び製造方法 |
| JPH0821682B2 (ja) * | 1987-04-24 | 1996-03-04 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP2810042B2 (ja) * | 1987-09-16 | 1998-10-15 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPH01231364A (ja) * | 1988-03-11 | 1989-09-14 | Hitachi Ltd | 半導体集積回路装置 |
| JPH0821687B2 (ja) * | 1989-05-31 | 1996-03-04 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JP2673385B2 (ja) * | 1989-10-26 | 1997-11-05 | 三菱電機株式会社 | 半導体装置 |
| DE4034169C2 (de) * | 1989-10-26 | 1994-05-19 | Mitsubishi Electric Corp | DRAM mit einem Speicherzellenfeld und Herstellungsverfahren dafür |
-
1991
- 1991-03-20 KR KR1019910004394A patent/KR940000510B1/ko not_active IP Right Cessation
- 1991-05-27 TW TW080104126A patent/TW199236B/zh not_active IP Right Cessation
- 1991-05-30 FR FR9106512A patent/FR2674373B1/fr not_active Expired - Fee Related
- 1991-05-30 DE DE4117703A patent/DE4117703C2/de not_active Expired - Lifetime
- 1991-06-04 IT ITMI911513A patent/IT1247968B/it active IP Right Grant
- 1991-06-05 GB GB9112136A patent/GB2253937B/en not_active Expired - Lifetime
- 1991-06-20 JP JP3148392A patent/JP2564712B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04320059A (ja) | 1992-11-10 |
| ITMI911513A0 (it) | 1991-06-04 |
| GB2253937A (en) | 1992-09-23 |
| FR2674373A1 (fr) | 1992-09-25 |
| DE4117703A1 (de) | 1992-09-24 |
| GB9112136D0 (en) | 1991-07-24 |
| TW199236B (fr) | 1993-02-01 |
| DE4117703C2 (de) | 1994-12-22 |
| GB2253937B (en) | 1995-10-25 |
| KR920018890A (ko) | 1992-10-22 |
| KR940000510B1 (ko) | 1994-01-21 |
| ITMI911513A1 (it) | 1992-12-04 |
| FR2674373B1 (fr) | 2001-07-06 |
| IT1247968B (it) | 1995-01-05 |
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