JP2024521248A - 多層構造の製造方法 - Google Patents

多層構造の製造方法 Download PDF

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Publication number
JP2024521248A
JP2024521248A JP2023562686A JP2023562686A JP2024521248A JP 2024521248 A JP2024521248 A JP 2024521248A JP 2023562686 A JP2023562686 A JP 2023562686A JP 2023562686 A JP2023562686 A JP 2023562686A JP 2024521248 A JP2024521248 A JP 2024521248A
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JP
Japan
Prior art keywords
substrate
film layer
thick film
layer
inorganic particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023562686A
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English (en)
Japanese (ja)
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JP2024521248A5 (https=
Inventor
マリリン ルマニー
クリステル ナヴォン
セバスチャン キュナール
ディディエ ランドリュー
クリステル ヴェティズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of JP2024521248A publication Critical patent/JP2024521248A/ja
Publication of JP2024521248A5 publication Critical patent/JP2024521248A5/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284—Application of adhesive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0036—Heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/126—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/732—Dimensional properties
    • B32B2307/737—Dimensions, e.g. volume or area
    • B32B2307/7375—Linear, e.g. length, distance or width
    • B32B2307/7376—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/02—Ceramics

Landscapes

  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2023562686A 2021-04-16 2022-04-12 多層構造の製造方法 Pending JP2024521248A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2103986A FR3122034B1 (fr) 2021-04-16 2021-04-16 Procédé de fabrication d’une structure multicouche
FR2103986 2021-04-16
PCT/FR2022/050691 WO2022219283A1 (fr) 2021-04-16 2022-04-12 Procédé de fabrication d'une structure multicouche

Publications (2)

Publication Number Publication Date
JP2024521248A true JP2024521248A (ja) 2024-05-30
JP2024521248A5 JP2024521248A5 (https=) 2025-03-25

Family

ID=76375216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023562686A Pending JP2024521248A (ja) 2021-04-16 2022-04-12 多層構造の製造方法

Country Status (7)

Country Link
US (1) US20240190120A1 (https=)
EP (1) EP4324020A1 (https=)
JP (1) JP2024521248A (https=)
KR (1) KR20230171960A (https=)
CN (1) CN117280442A (https=)
FR (1) FR3122034B1 (https=)
WO (1) WO2022219283A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115613013B (zh) * 2022-10-31 2024-06-04 中国科学院化学研究所 一种复合绝缘层及其制备方法
EP4700820A1 (en) * 2024-08-19 2026-02-25 Umicore Compound semiconductor layered structure and processes for preparing a compound semiconductor layered structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164197A (ja) * 2007-12-28 2009-07-23 Semiconductor Energy Lab Co Ltd 半導体基板製造装置および半導体基板製造システム
JP2010199578A (ja) * 2009-02-16 2010-09-09 Semikron Elektronik Gmbh & Co Kg 半導体装置
JP2013506035A (ja) * 2009-09-25 2013-02-21 フェローテック（ユーエスエー）コーポレイション 高強度の結合及びコーティング混合物
JP2013131760A (ja) * 2011-12-20 2013-07-04 Commissariat A L'energie Atomique & Aux Energies Alternatives 可撓性構造体の製造方法、中間構造体及び可撓性構造体
JP2013533622A (ja) * 2010-06-22 2013-08-22 コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ 単結晶シリコンの薄層を転写する方法
JP2017034255A (ja) * 2015-07-31 2017-02-09 インフィネオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ 半導体デバイスの形成方法および半導体デバイス
US20210028057A1 (en) * 2018-03-30 2021-01-28 Soitec Substrate for radiofrequency applications and associated manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9219049B2 (en) * 2013-12-13 2015-12-22 Infineon Technologies Ag Compound structure and method for forming a compound structure
FR3102608B1 (fr) * 2019-10-28 2021-09-24 Commissariat Energie Atomique Procédé de transfert d’une couche mince à l’aide d’un polymère précéramique chargé

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164197A (ja) * 2007-12-28 2009-07-23 Semiconductor Energy Lab Co Ltd 半導体基板製造装置および半導体基板製造システム
JP2010199578A (ja) * 2009-02-16 2010-09-09 Semikron Elektronik Gmbh & Co Kg 半導体装置
JP2013506035A (ja) * 2009-09-25 2013-02-21 フェローテック（ユーエスエー）コーポレイション 高強度の結合及びコーティング混合物
JP2013533622A (ja) * 2010-06-22 2013-08-22 コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ 単結晶シリコンの薄層を転写する方法
JP2013131760A (ja) * 2011-12-20 2013-07-04 Commissariat A L'energie Atomique & Aux Energies Alternatives 可撓性構造体の製造方法、中間構造体及び可撓性構造体
JP2017034255A (ja) * 2015-07-31 2017-02-09 インフィネオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ 半導体デバイスの形成方法および半導体デバイス
US20210028057A1 (en) * 2018-03-30 2021-01-28 Soitec Substrate for radiofrequency applications and associated manufacturing method

Also Published As

Publication number Publication date
FR3122034B1 (fr) 2023-04-14
US20240190120A1 (en) 2024-06-13
FR3122034A1 (fr) 2022-10-21
EP4324020A1 (fr) 2024-02-21
CN117280442A (zh) 2023-12-22
WO2022219283A1 (fr) 2022-10-20
KR20230171960A (ko) 2023-12-21

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