KR20230171960A - 다층 구조물의 제조 방법 - Google Patents

다층 구조물의 제조 방법 Download PDF

Info

Publication number
KR20230171960A
KR20230171960A KR1020237038723A KR20237038723A KR20230171960A KR 20230171960 A KR20230171960 A KR 20230171960A KR 1020237038723 A KR1020237038723 A KR 1020237038723A KR 20237038723 A KR20237038723 A KR 20237038723A KR 20230171960 A KR20230171960 A KR 20230171960A
Authority
KR
South Korea
Prior art keywords
substrate
layer
thick layer
multilayer structure
inorganic particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237038723A
Other languages
English (en)
Korean (ko)
Inventor
마릴린 루마니
크리스텔 나보네
세바스티앵 퀘나드
디디에 란드루
크리스텔 베이티조
Original Assignee
꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
소이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈, 소이텍 filed Critical 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
Publication of KR20230171960A publication Critical patent/KR20230171960A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284—Application of adhesive
    • H01L21/185—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0036—Heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • H01L21/02002—
    • H01L21/02205—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/126—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/732—Dimensional properties
    • B32B2307/737—Dimensions, e.g. volume or area
    • B32B2307/7375—Linear, e.g. length, distance or width
    • B32B2307/7376—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/02—Ceramics

Landscapes

  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020237038723A 2021-04-16 2022-04-12 다층 구조물의 제조 방법 Pending KR20230171960A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2103986A FR3122034B1 (fr) 2021-04-16 2021-04-16 Procédé de fabrication d’une structure multicouche
FRFR2103986 2021-04-16
PCT/FR2022/050691 WO2022219283A1 (fr) 2021-04-16 2022-04-12 Procédé de fabrication d'une structure multicouche

Publications (1)

Publication Number Publication Date
KR20230171960A true KR20230171960A (ko) 2023-12-21

Family

ID=76375216

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237038723A Pending KR20230171960A (ko) 2021-04-16 2022-04-12 다층 구조물의 제조 방법

Country Status (7)

Country Link
US (1) US20240190120A1 (https=)
EP (1) EP4324020A1 (https=)
JP (1) JP2024521248A (https=)
KR (1) KR20230171960A (https=)
CN (1) CN117280442A (https=)
FR (1) FR3122034B1 (https=)
WO (1) WO2022219283A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115613013B (zh) * 2022-10-31 2024-06-04 中国科学院化学研究所 一种复合绝缘层及其制备方法
EP4700820A1 (en) * 2024-08-19 2026-02-25 Umicore Compound semiconductor layered structure and processes for preparing a compound semiconductor layered structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5354900B2 (ja) * 2007-12-28 2013-11-27 株式会社半導体エネルギー研究所 半導体基板の作製方法
DE102009000888B4 (de) * 2009-02-16 2011-03-24 Semikron Elektronik Gmbh & Co. Kg Halbleiteranordnung
JP2013506035A (ja) * 2009-09-25 2013-02-21 フェローテック（ユーエスエー）コーポレイション 高強度の結合及びコーティング混合物
FR2961515B1 (fr) * 2010-06-22 2012-08-24 Commissariat Energie Atomique Procede de realisation d'une couche mince de silicium monocristallin sur une couche de polymere
FR2984597B1 (fr) * 2011-12-20 2016-07-29 Commissariat Energie Atomique Fabrication d’une structure souple par transfert de couches
US9219049B2 (en) * 2013-12-13 2015-12-22 Infineon Technologies Ag Compound structure and method for forming a compound structure
DE102015112649B4 (de) * 2015-07-31 2021-02-04 Infineon Technologies Ag Verfahren zum bilden eines halbleiterbauelements und halbleiterbauelement
FR3079662B1 (fr) * 2018-03-30 2020-02-28 Soitec Substrat pour applications radiofrequences et procede de fabrication associe
FR3102608B1 (fr) * 2019-10-28 2021-09-24 Commissariat Energie Atomique Procédé de transfert d’une couche mince à l’aide d’un polymère précéramique chargé

Also Published As

Publication number Publication date
FR3122034B1 (fr) 2023-04-14
US20240190120A1 (en) 2024-06-13
FR3122034A1 (fr) 2022-10-21
EP4324020A1 (fr) 2024-02-21
CN117280442A (zh) 2023-12-22
WO2022219283A1 (fr) 2022-10-20
JP2024521248A (ja) 2024-05-30

Similar Documents

Publication Publication Date Title
CN100483698C (zh) 多孔低k介质互连结构
US8257529B2 (en) Multilayer ceramic substrate, method for producing same, and electronic component
KR20230171960A (ko) 다층 구조물의 제조 방법
EP1226589B1 (en) Infiltrated nanoporous materials and methods of producing same
CN1309074C (zh) 衬底上的电互连结构及其制作方法
JP2005516394A (ja) 狭ギャップ充填用途の誘電フィルム
CN1607638A (zh) 一种层转移结构及其方法
US20040102020A1 (en) Method for bonding and debonding films using a high-temperature polymer
EP0798781B1 (en) Silicon nitride circuit board and producing method therefor
EP0807318B1 (en) Process for producing a glass-coated article and article produced thereby
CN1887593A (zh) 具有假对称构形的低温共焙烧陶瓷结构的约束烧结方法
JP2024521248A5 (https=)
CN1503704A (zh) 分层堆栈及其生产方法
US11380577B2 (en) Method for transferring a thin layer using a filled preceramic polymer
JP3917426B2 (ja) スクリーン印刷による高密度セラミック厚膜の製造方法
CN1323969C (zh) 玻璃陶瓷组合物及使用了该组合物的电子部件和叠层式lc复合部件
KR102195633B1 (ko) 저온동시소결용 복합체의 제조방법
KR100888770B1 (ko) 이종접합 세라믹스의 제조방법
US20020076543A1 (en) Layered dielectric nanoporous materials and methods of producing same
CN101359621B (zh) 用于通过浸渗加固结构的方法
JP2005175405A (ja) 積層構造体並びに半導体装置及びその製造方法
KR101059750B1 (ko) 고밀도의 압전 후막의 제조 방법
JP2003289099A (ja) 半導体装置および半導体装置の製造方法
TW200408536A (en) Low-temperature co-fired ceramics substrate with green tape lamination of different ceramics/glass volume ratio and its manufacturing method
CN1157769C (zh) 多孔性低介电常数材料的制造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13 Search requested

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D13-SRH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000