FR3122034B1 - Procédé de fabrication d’une structure multicouche - Google Patents

Procédé de fabrication d’une structure multicouche Download PDF

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Publication number
FR3122034B1
FR3122034B1 FR2103986A FR2103986A FR3122034B1 FR 3122034 B1 FR3122034 B1 FR 3122034B1 FR 2103986 A FR2103986 A FR 2103986A FR 2103986 A FR2103986 A FR 2103986A FR 3122034 B1 FR3122034 B1 FR 3122034B1
Authority
FR
France
Prior art keywords
substrate
thick layer
manufacturing
multilayer structure
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2103986A
Other languages
English (en)
French (fr)
Other versions
FR3122034A1 (fr
Inventor
Marilyne Roumanie
Christelle Navone
Sébastien Quenard
Didier Landru
Christelle Veytizou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR2103986A priority Critical patent/FR3122034B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Soitec SA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to KR1020237038723A priority patent/KR20230171960A/ko
Priority to PCT/FR2022/050691 priority patent/WO2022219283A1/fr
Priority to JP2023562686A priority patent/JP2024521248A/ja
Priority to EP22722302.1A priority patent/EP4324020A1/fr
Priority to US18/287,148 priority patent/US20240190120A1/en
Priority to CN202280028741.3A priority patent/CN117280442A/zh
Publication of FR3122034A1 publication Critical patent/FR3122034A1/fr
Application granted granted Critical
Publication of FR3122034B1 publication Critical patent/FR3122034B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284—Application of adhesive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0036—Heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/126—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/732—Dimensional properties
    • B32B2307/737—Dimensions, e.g. volume or area
    • B32B2307/7375—Linear, e.g. length, distance or width
    • B32B2307/7376—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/02—Ceramics

Landscapes

  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR2103986A 2021-04-16 2021-04-16 Procédé de fabrication d’une structure multicouche Active FR3122034B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2103986A FR3122034B1 (fr) 2021-04-16 2021-04-16 Procédé de fabrication d’une structure multicouche
PCT/FR2022/050691 WO2022219283A1 (fr) 2021-04-16 2022-04-12 Procédé de fabrication d'une structure multicouche
JP2023562686A JP2024521248A (ja) 2021-04-16 2022-04-12 多層構造の製造方法
EP22722302.1A EP4324020A1 (fr) 2021-04-16 2022-04-12 Procédé de fabrication d'une structure multicouche
KR1020237038723A KR20230171960A (ko) 2021-04-16 2022-04-12 다층 구조물의 제조 방법
US18/287,148 US20240190120A1 (en) 2021-04-16 2022-04-12 Method of manufacturing a multilayer structure
CN202280028741.3A CN117280442A (zh) 2021-04-16 2022-04-12 生产多层结构的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2103986A FR3122034B1 (fr) 2021-04-16 2021-04-16 Procédé de fabrication d’une structure multicouche
FR2103986 2021-04-16

Publications (2)

Publication Number Publication Date
FR3122034A1 FR3122034A1 (fr) 2022-10-21
FR3122034B1 true FR3122034B1 (fr) 2023-04-14

Family

ID=76375216

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2103986A Active FR3122034B1 (fr) 2021-04-16 2021-04-16 Procédé de fabrication d’une structure multicouche

Country Status (7)

Country Link
US (1) US20240190120A1 (https=)
EP (1) EP4324020A1 (https=)
JP (1) JP2024521248A (https=)
KR (1) KR20230171960A (https=)
CN (1) CN117280442A (https=)
FR (1) FR3122034B1 (https=)
WO (1) WO2022219283A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115613013B (zh) * 2022-10-31 2024-06-04 中国科学院化学研究所 一种复合绝缘层及其制备方法
EP4700820A1 (en) * 2024-08-19 2026-02-25 Umicore Compound semiconductor layered structure and processes for preparing a compound semiconductor layered structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5354900B2 (ja) * 2007-12-28 2013-11-27 株式会社半導体エネルギー研究所 半導体基板の作製方法
DE102009000888B4 (de) * 2009-02-16 2011-03-24 Semikron Elektronik Gmbh & Co. Kg Halbleiteranordnung
JP2013506035A (ja) * 2009-09-25 2013-02-21 フェローテック（ユーエスエー）コーポレイション 高強度の結合及びコーティング混合物
FR2961515B1 (fr) * 2010-06-22 2012-08-24 Commissariat Energie Atomique Procede de realisation d'une couche mince de silicium monocristallin sur une couche de polymere
FR2984597B1 (fr) * 2011-12-20 2016-07-29 Commissariat Energie Atomique Fabrication d’une structure souple par transfert de couches
US9219049B2 (en) * 2013-12-13 2015-12-22 Infineon Technologies Ag Compound structure and method for forming a compound structure
DE102015112649B4 (de) * 2015-07-31 2021-02-04 Infineon Technologies Ag Verfahren zum bilden eines halbleiterbauelements und halbleiterbauelement
FR3079662B1 (fr) * 2018-03-30 2020-02-28 Soitec Substrat pour applications radiofrequences et procede de fabrication associe
FR3102608B1 (fr) * 2019-10-28 2021-09-24 Commissariat Energie Atomique Procédé de transfert d’une couche mince à l’aide d’un polymère précéramique chargé

Also Published As

Publication number Publication date
US20240190120A1 (en) 2024-06-13
FR3122034A1 (fr) 2022-10-21
EP4324020A1 (fr) 2024-02-21
CN117280442A (zh) 2023-12-22
WO2022219283A1 (fr) 2022-10-20
KR20230171960A (ko) 2023-12-21
JP2024521248A (ja) 2024-05-30

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