JP2024139916A5 - - Google Patents
Info
- Publication number
- JP2024139916A5 JP2024139916A5 JP2023050864A JP2023050864A JP2024139916A5 JP 2024139916 A5 JP2024139916 A5 JP 2024139916A5 JP 2023050864 A JP2023050864 A JP 2023050864A JP 2023050864 A JP2023050864 A JP 2023050864A JP 2024139916 A5 JP2024139916 A5 JP 2024139916A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- semiconductor device
- region
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023050864A JP2024139916A (ja) | 2023-03-28 | 2023-03-28 | 半導体装置、表示装置、及び半導体装置の製造方法 |
| KR1020240034928A KR102878611B1 (ko) | 2023-03-28 | 2024-03-13 | 반도체 장치, 표시 장치, 및 반도체 장치의 제조 방법 |
| TW113109858A TWI898488B (zh) | 2023-03-28 | 2024-03-18 | 半導體裝置、顯示裝置及半導體裝置之製造方法 |
| CN202410305656.8A CN118738136A (zh) | 2023-03-28 | 2024-03-18 | 半导体装置、显示装置及半导体装置的制造方法 |
| US18/618,022 US20240332429A1 (en) | 2023-03-28 | 2024-03-27 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023050864A JP2024139916A (ja) | 2023-03-28 | 2023-03-28 | 半導体装置、表示装置、及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024139916A JP2024139916A (ja) | 2024-10-10 |
| JP2024139916A5 true JP2024139916A5 (enExample) | 2026-03-19 |
Family
ID=92853996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023050864A Pending JP2024139916A (ja) | 2023-03-28 | 2023-03-28 | 半導体装置、表示装置、及び半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240332429A1 (enExample) |
| JP (1) | JP2024139916A (enExample) |
| KR (1) | KR102878611B1 (enExample) |
| CN (1) | CN118738136A (enExample) |
| TW (1) | TWI898488B (enExample) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR102099445B1 (ko) * | 2012-06-29 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) * | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| JP6345023B2 (ja) * | 2013-08-07 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI685116B (zh) * | 2014-02-07 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102593883B1 (ko) * | 2015-06-19 | 2023-10-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 그 제작 방법, 및 전자 기기 |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| WO2019087002A1 (ja) * | 2017-11-02 | 2019-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2023
- 2023-03-28 JP JP2023050864A patent/JP2024139916A/ja active Pending
-
2024
- 2024-03-13 KR KR1020240034928A patent/KR102878611B1/ko active Active
- 2024-03-18 TW TW113109858A patent/TWI898488B/zh active
- 2024-03-18 CN CN202410305656.8A patent/CN118738136A/zh active Pending
- 2024-03-27 US US18/618,022 patent/US20240332429A1/en active Pending
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