JP2008182165A5 - - Google Patents
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- Publication number
- JP2008182165A5 JP2008182165A5 JP2007016259A JP2007016259A JP2008182165A5 JP 2008182165 A5 JP2008182165 A5 JP 2008182165A5 JP 2007016259 A JP2007016259 A JP 2007016259A JP 2007016259 A JP2007016259 A JP 2007016259A JP 2008182165 A5 JP2008182165 A5 JP 2008182165A5
- Authority
- JP
- Japan
- Prior art keywords
- pair
- crystalline semiconductor
- semiconductor layer
- region
- impurity regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007016259A JP5337346B2 (ja) | 2007-01-26 | 2007-01-26 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007016259A JP5337346B2 (ja) | 2007-01-26 | 2007-01-26 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012248182A Division JP5674747B2 (ja) | 2012-11-12 | 2012-11-12 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008182165A JP2008182165A (ja) | 2008-08-07 |
| JP2008182165A5 true JP2008182165A5 (enExample) | 2010-03-04 |
| JP5337346B2 JP5337346B2 (ja) | 2013-11-06 |
Family
ID=39725812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007016259A Active JP5337346B2 (ja) | 2007-01-26 | 2007-01-26 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5337346B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5337380B2 (ja) | 2007-01-26 | 2013-11-06 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| KR102290801B1 (ko) * | 2013-06-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP2015207639A (ja) | 2014-04-18 | 2015-11-19 | ソニー株式会社 | 高周波スイッチ用半導体装置、高周波スイッチおよび高周波モジュール |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3127253B2 (ja) * | 1991-09-17 | 2001-01-22 | 日本電信電話株式会社 | Ｓｏｉ型半導体装置およびその製造方法 |
| JPH06268224A (ja) * | 1993-03-12 | 1994-09-22 | Mitsubishi Electric Corp | 電界効果型トランジスタを含む半導体装置 |
| JPH06275832A (ja) * | 1993-03-18 | 1994-09-30 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
| JPH1048610A (ja) * | 1996-07-31 | 1998-02-20 | Furontetsuku:Kk | 液晶表示素子 |
| JP2000216391A (ja) * | 1999-01-25 | 2000-08-04 | Sony Corp | Ｓｏｉ型半導体装置の製造方法 |
| JP2005236202A (ja) * | 2004-02-23 | 2005-09-02 | Seiko Epson Corp | 半導体装置およびその製造方法 |
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2007
- 2007-01-26 JP JP2007016259A patent/JP5337346B2/ja active Active