JP2007531268A5 - - Google Patents
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- JP2007531268A5 JP2007531268A5 JP2007504945A JP2007504945A JP2007531268A5 JP 2007531268 A5 JP2007531268 A5 JP 2007531268A5 JP 2007504945 A JP2007504945 A JP 2007504945A JP 2007504945 A JP2007504945 A JP 2007504945A JP 2007531268 A5 JP2007531268 A5 JP 2007531268A5
- Authority
- JP
- Japan
- Prior art keywords
- lateral dimension
- conductive layer
- insulating layer
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/811,461 US7105430B2 (en) | 2004-03-26 | 2004-03-26 | Method for forming a semiconductor device having a notched control electrode and structure thereof |
| US10/811,461 | 2004-03-26 | ||
| PCT/US2005/002133 WO2005104225A2 (en) | 2004-03-26 | 2005-01-21 | Method for forming a semiconductor device having a notched control electrode and structure thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007531268A JP2007531268A (ja) | 2007-11-01 |
| JP2007531268A5 true JP2007531268A5 (enExample) | 2008-03-06 |
| JP5025462B2 JP5025462B2 (ja) | 2012-09-12 |
Family
ID=34990536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007504945A Expired - Fee Related JP5025462B2 (ja) | 2004-03-26 | 2005-01-21 | 切り欠きゲート電極を有する半導体素子の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7105430B2 (enExample) |
| EP (1) | EP1728274A4 (enExample) |
| JP (1) | JP5025462B2 (enExample) |
| CN (1) | CN100536094C (enExample) |
| WO (1) | WO2005104225A2 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320629C (zh) * | 2004-06-28 | 2007-06-06 | 中芯国际集成电路制造(上海)有限公司 | 集成电路器件形成隔离物后修复等离子体损伤的方法 |
| US8993055B2 (en) | 2005-10-27 | 2015-03-31 | Asm International N.V. | Enhanced thin film deposition |
| US8053849B2 (en) * | 2005-11-09 | 2011-11-08 | Advanced Micro Devices, Inc. | Replacement metal gate transistors with reduced gate oxide leakage |
| EP1906461B1 (de) * | 2006-09-26 | 2020-03-18 | OSRAM Opto Semiconductors GmbH | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
| KR101263648B1 (ko) * | 2007-08-31 | 2013-05-21 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터 및 그 제조 방법. |
| JP2010027638A (ja) * | 2008-07-15 | 2010-02-04 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法および半導体装置 |
| WO2010023608A2 (en) * | 2008-08-25 | 2010-03-04 | Nxp B.V. | Low cost mos transistor for rf applications |
| US9128699B2 (en) * | 2008-12-22 | 2015-09-08 | Intel Corporation | Method and system for queuing transfers of multiple non-contiguous address ranges with a single command |
| DE102010042229B4 (de) * | 2010-10-08 | 2012-10-25 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zum Steigern der Integrität eines Gatestapels mit großem ε durch Erzeugen einer gesteuerten Unterhöhlung auf der Grundlage einer Nasschemie und mit den Verfahren hergestellter Transistor |
| US9166004B2 (en) * | 2010-12-23 | 2015-10-20 | Intel Corporation | Semiconductor device contacts |
| US8383469B2 (en) * | 2011-01-07 | 2013-02-26 | Eastman Kodak Company | Producing transistor including reduced channel length |
| US8314022B1 (en) * | 2011-05-20 | 2012-11-20 | Intermolecular, Inc. | Method for etching gate stack |
| WO2014119596A1 (ja) * | 2013-02-01 | 2014-08-07 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置およびその製造方法 |
| US9412602B2 (en) | 2013-03-13 | 2016-08-09 | Asm Ip Holding B.V. | Deposition of smooth metal nitride films |
| US8846550B1 (en) | 2013-03-14 | 2014-09-30 | Asm Ip Holding B.V. | Silane or borane treatment of metal thin films |
| US8841182B1 (en) | 2013-03-14 | 2014-09-23 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
| US9394609B2 (en) | 2014-02-13 | 2016-07-19 | Asm Ip Holding B.V. | Atomic layer deposition of aluminum fluoride thin films |
| US10643925B2 (en) | 2014-04-17 | 2020-05-05 | Asm Ip Holding B.V. | Fluorine-containing conductive films |
| US10002936B2 (en) | 2014-10-23 | 2018-06-19 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
| US9941425B2 (en) | 2015-10-16 | 2018-04-10 | Asm Ip Holdings B.V. | Photoactive devices and materials |
| US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| US10186420B2 (en) | 2016-11-29 | 2019-01-22 | Asm Ip Holding B.V. | Formation of silicon-containing thin films |
| US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
| US10504901B2 (en) | 2017-04-26 | 2019-12-10 | Asm Ip Holding B.V. | Substrate processing method and device manufactured using the same |
| KR102627238B1 (ko) | 2017-05-05 | 2024-01-19 | 에이에스엠 아이피 홀딩 비.브이. | 산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정 |
| KR20190065962A (ko) | 2017-12-04 | 2019-06-12 | 에이에스엠 아이피 홀딩 비.브이. | 유전체와 금속 표면 상에 SiOC의 균일한 증착 |
| US12359315B2 (en) | 2019-02-14 | 2025-07-15 | Asm Ip Holding B.V. | Deposition of oxides and nitrides |
| US12341005B2 (en) | 2020-01-17 | 2025-06-24 | Asm Ip Holding B.V. | Formation of SiCN thin films |
| US12142479B2 (en) | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635853B2 (en) * | 1909-08-09 | 2003-10-21 | Ibiden Co., Ltd. | Hot plate unit |
| US5543646A (en) * | 1988-09-08 | 1996-08-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| JP3350246B2 (ja) * | 1994-09-30 | 2002-11-25 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100207472B1 (ko) * | 1996-06-07 | 1999-07-15 | 윤종용 | 티타늄 질화막 적층 구조의 게이트 전극을 갖춘 반도체장치 및 그 제조 방법 |
| US6225168B1 (en) * | 1998-06-04 | 2001-05-01 | Advanced Micro Devices, Inc. | Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof |
| GB2359193B (en) | 1998-12-07 | 2003-11-12 | Intel Corp | Transistor with notched gate |
| US6596598B1 (en) * | 2000-02-23 | 2003-07-22 | Advanced Micro Devices, Inc. | T-shaped gate device and method for making |
| US6399469B1 (en) * | 2000-07-10 | 2002-06-04 | Advanced Micro Devices, Inc. | Fabrication of a notched gate structure for a field effect transistor using a single patterning and etch process |
| JP4447128B2 (ja) * | 2000-07-12 | 2010-04-07 | 富士通マイクロエレクトロニクス株式会社 | 絶縁ゲート型半導体装置の製造方法 |
| US6403456B1 (en) * | 2000-08-22 | 2002-06-11 | Advanced Micro Devices, Inc. | T or T/Y gate formation using trim etch processing |
| US6440830B1 (en) * | 2000-08-30 | 2002-08-27 | Advanced Micro Devices, Inc. | Method of copper-polysilicon gate formation |
| US6645840B2 (en) * | 2000-10-19 | 2003-11-11 | Texas Instruments Incorporated | Multi-layered polysilicon process |
| US6891235B1 (en) * | 2000-11-15 | 2005-05-10 | International Business Machines Corporation | FET with T-shaped gate |
| US6646326B1 (en) | 2000-11-15 | 2003-11-11 | Advanced Micro Devices, Inc. | Method and system for providing source/drain-gate spatial overlap engineering for low-power devices |
| JP4628644B2 (ja) * | 2001-10-04 | 2011-02-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US7199011B2 (en) * | 2003-07-16 | 2007-04-03 | Texas Instruments Incorporated | Method to reduce transistor gate to source/drain overlap capacitance by incorporation of carbon |
-
2004
- 2004-03-26 US US10/811,461 patent/US7105430B2/en not_active Expired - Lifetime
-
2005
- 2005-01-21 JP JP2007504945A patent/JP5025462B2/ja not_active Expired - Fee Related
- 2005-01-21 EP EP05711888A patent/EP1728274A4/en not_active Withdrawn
- 2005-01-21 WO PCT/US2005/002133 patent/WO2005104225A2/en not_active Ceased
- 2005-01-21 CN CNB2005800097006A patent/CN100536094C/zh not_active Expired - Fee Related
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