JP2007531268A - 切り欠き制御電極及び当該電極の構造を有する半導体素子の製造方法 - Google Patents
切り欠き制御電極及び当該電極の構造を有する半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 18
- 229910021332 silicide Inorganic materials 0.000 claims description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 13
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 9
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- -1 lanthanum aluminate Chemical class 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 2
- 229910021334 nickel silicide Inorganic materials 0.000 claims 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 125000001475 halogen functional group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 156
- 125000005843 halogen group Chemical group 0.000 description 23
- 239000002019 doping agent Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004200 TaSiN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
Abstract
Description
当業者であれば、これらの図における構成要素が説明を簡単かつ明瞭にするために示され、そして必ずしも寸法通りには描かれていないことが分かるであろう。例えば、これらの図における幾つかの構成要素の寸法を他の構成要素に対して誇張して描いて本発明の実施形態を理解し易くしている。
Claims (29)
- 基板と、
前記基板の上に形成される絶縁層と、
絶縁層の上に形成される制御電極と、を備え、制御電極は、
絶縁層の上に形成され、かつ第1横方向寸法を有する第1導電層と、
第1導電層の上に形成され、かつ第2横方向寸法を有する第2導電層と、
第2導電層の上に形成され、かつ第3横方向寸法を有する非絶縁層とを備え、
第3横方向寸法は第1横方向寸法よりも大きく、かつ第2横方向寸法よりも大きい、半導体素子。 - 基板に形成されるソース/ドレイン領域をさらに備える、請求項1記載の半導体素子。
- 基板の中にハロイオン注入領域をさらに備える、請求項1記載の半導体素子。
- 非絶縁層はポリシリコンを含む、請求項1記載の半導体素子。
- 第1導電層は、炭化タンタル、窒化タンタル、ニッケルシリサイド、タンタルシリサイド、コバルトシリサイド、またはタングステンの内の一つからなる、請求項1記載の半導体素子。
- 第1導電層は、窒化チタン、レニウム、白金、酸化ルテニウム、ロジウムシリサイド、パラジウムシリサイド、または炭窒化タングステンの内の一つからなる、請求項1記載の半導体素子。
- 第1導電層は1〜40ナノメートルの間の厚さである、請求項1記載の半導体素子。
- 第2導電層はシリコンゲルマニウムを含む、請求項1記載の半導体素子。
- 第2導電層は、不純物ドープシリコンゲルマニウム、不純物ドープシリコン、不純物ドープ炭化シリコン、シリサイド、金属炭化物、または金属窒化物の内の一つからなる、請求項1記載の半導体素子。
- 絶縁層は、酸化ハフニウム、窒化アルミニウム、酸化アルミニウム、5酸化タンタル、チタン酸バリウム、アルミン酸ランタン、または酸化ジルコニウムの内の一つからなる、請求項1記載の半導体素子。
- 第3横方向寸法は、第1及び第2導電層の一部分を選択的に除去して切り欠きを制御電極の反対側面に形成することにより、第1横方向寸法及び第2横方向寸法よりも大きくなる、請求項1記載の半導体素子。
- 前記切り欠きは、第2導電層を選択的にエッチングし、及び第1導電層を選択的にエッチングすることにより形成される、請求項11記載の半導体素子。
- 第1導電層の一部分は、第1導電層の一部分を酸化することにより除去される、請求項11記載の半導体素子。
- 第2絶縁層が制御電極の切り欠きの中に、かつ反対側面に形成される、請求項11記載の半導体素子。
- 制御電極の反対側面に、かつ切り欠きの中に位置する第2絶縁層の上に形成されるサイドウォールスペーサをさらに備える、請求項13記載の半導体素子。
- 一の表面を有する基板を設ける工程と、
絶縁層を基板の前記表面の上に形成する工程と、
第1パターニング済み導電層を絶縁層の上に形成する工程と、
第2パターニング済み導電層を第1パターニング済み導電層の上に形成する工程と、
パターニング済み非絶縁層を第2パターニング済み導電層の上に形成する工程と、
第1及び第2パターニング済み導電層の一部分を選択的に除去して、半導体素子の切り欠き制御電極を形成する工程とを備える、半導体装置の製造方法。 - ソース/ドレイン領域を基板に形成する工程をさらに備える、請求項16記載の方法。
- ハロイオン注入領域を基板に形成する工程をさらに備える、請求項16記載の方法。
- パターニング済み非絶縁層を形成する工程では、ポリシリコンから成るパターニング済み非絶縁層を形成する、請求項16記載の方法。
- 第1パターニング済み導電層は、炭化タンタル、窒化タンタル、ニッケルシリサイド、タンタルシリサイド、コバルトシリサイド、またはタングステンの内の一つからなる、請求項16記載の方法。
- 第1パターニング済み導電層は、窒化チタン、レニウム、白金、酸化ルテニウム、ロジウムシリサイド、パラジウムシリサイド、または炭窒化タングステンの内の一つからなる、請求項16記載の方法。
- 第1パターニング済み導電層は1〜40ナノメートルの間の厚さに形成される、請求項16記載の方法。
- 第2パターニング済み導電層はシリコンゲルマニウムからなる、請求項16記載の方法。
- 第2パターニング済み導電層は、不純物ドープシリコンゲルマニウム、不純物ドープシリコン、不純物ドープ炭化シリコン、シリサイド、金属炭化物、または金属窒化物の内の一つからなる、請求項16記載の方法。
- 絶縁層は、酸化ハフニウム、窒化アルミニウム、酸化アルミニウム、5酸化タンタル、チタン酸バリウム、アルミン酸ランタン、または酸化ジルコニウムの内の一つ、或いはこれらの材料の組み合わせからなる、請求項16記載の方法。
- 第1及び第2パターニング済み導電層の一部分を選択的に除去する工程は、更に、
第2パターニング済み導電層の露出横方向エッジの所定部分を選択的にエッチングする工程と、
第1パターニング済み導電層の露出部分を酸化する工程とを備える、請求項16記載の方法。 - 第1及び第2パターニング済み導電層の一部分を選択的に除去する工程は更に、
第2パターニング済み導電層の露出横方向エッジの所定部分を選択的にエッチングする工程と、
第1パターニング済み導電層の露出部分を、ソフトエッチ半導体形成プロセスを使用して選択的にエッチングする工程とを備える、請求項16記載の方法。 - 更に、第2絶縁層を、切り欠き制御電極の切り欠きの中に、かつ反対側面に形成する、請求項16記載の方法。
- 更に、サイドウォールスペーサを、切り欠き制御電極の反対側面に、かつ切り欠きの中に位置する第2絶縁層の上に形成する、請求項16記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/811,461 US7105430B2 (en) | 2004-03-26 | 2004-03-26 | Method for forming a semiconductor device having a notched control electrode and structure thereof |
US10/811,461 | 2004-03-26 | ||
PCT/US2005/002133 WO2005104225A2 (en) | 2004-03-26 | 2005-01-21 | Method for forming a semiconductor device having a notched control electrode and structure thereof |
Publications (3)
Publication Number | Publication Date |
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JP2007531268A true JP2007531268A (ja) | 2007-11-01 |
JP2007531268A5 JP2007531268A5 (ja) | 2008-03-06 |
JP5025462B2 JP5025462B2 (ja) | 2012-09-12 |
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EP (1) | EP1728274A4 (ja) |
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- 2005-01-21 JP JP2007504945A patent/JP5025462B2/ja not_active Expired - Fee Related
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Also Published As
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WO2005104225A2 (en) | 2005-11-03 |
CN101091239A (zh) | 2007-12-19 |
WO2005104225A3 (en) | 2006-06-08 |
US20050215008A1 (en) | 2005-09-29 |
JP5025462B2 (ja) | 2012-09-12 |
CN100536094C (zh) | 2009-09-02 |
EP1728274A2 (en) | 2006-12-06 |
US7105430B2 (en) | 2006-09-12 |
EP1728274A4 (en) | 2008-11-05 |
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