JP2023554134A5 - - Google Patents
Info
- Publication number
- JP2023554134A5 JP2023554134A5 JP2023537658A JP2023537658A JP2023554134A5 JP 2023554134 A5 JP2023554134 A5 JP 2023554134A5 JP 2023537658 A JP2023537658 A JP 2023537658A JP 2023537658 A JP2023537658 A JP 2023537658A JP 2023554134 A5 JP2023554134 A5 JP 2023554134A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon carbide
- main surface
- forming
- insulating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20216084.2A EP4016645B1 (en) | 2020-12-21 | 2020-12-21 | Silicon carbide power device and method for manufacturing the same |
| EP20216084.2 | 2020-12-21 | ||
| PCT/EP2021/083908 WO2022135862A1 (en) | 2020-12-21 | 2021-12-02 | Silicon carbide power device and method for manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023554134A JP2023554134A (ja) | 2023-12-26 |
| JP2023554134A5 true JP2023554134A5 (enExample) | 2025-06-16 |
| JP7788457B2 JP7788457B2 (ja) | 2025-12-18 |
Family
ID=73856416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023537658A Active JP7788457B2 (ja) | 2020-12-21 | 2021-12-02 | 炭化珪素パワーデバイスおよびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240079454A1 (enExample) |
| EP (1) | EP4016645B1 (enExample) |
| JP (1) | JP7788457B2 (enExample) |
| CN (1) | CN116615806A (enExample) |
| WO (1) | WO2022135862A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115497917B (zh) * | 2022-08-05 | 2025-04-22 | 北京智慧能源研究院 | 一种碳化硅芯片封装结构 |
| JP2024104186A (ja) * | 2023-01-23 | 2024-08-02 | 株式会社デンソー | 炭化珪素基板、炭化珪素ウェハ、炭化珪素半導体装置 |
| US20240290879A1 (en) * | 2023-02-27 | 2024-08-29 | Globalfoundries U.S. Inc. | Field-effect transistors with deposited gate dielectric layers |
| WO2025126658A1 (ja) * | 2023-12-15 | 2025-06-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0851203A (ja) * | 1994-08-08 | 1996-02-20 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| DE19640308A1 (de) | 1996-09-30 | 1998-04-02 | Siemens Ag | Leistungs-MOS-Bauelement |
| WO2017047286A1 (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置 |
| EP3227924B1 (en) | 2016-02-02 | 2020-07-22 | ABB Power Grids Switzerland AG | Power semiconductor device |
| JP6662092B2 (ja) | 2016-02-23 | 2020-03-11 | 株式会社デンソー | 化合物半導体装置の製造方法 |
| JP7144329B2 (ja) * | 2017-01-25 | 2022-09-29 | ローム株式会社 | 半導体装置 |
| CN110366783B (zh) * | 2017-03-03 | 2023-04-21 | 日立能源瑞士股份公司 | 碳化硅超结功率半导体器件及用于制造该器件的方法 |
| US10056289B1 (en) * | 2017-04-20 | 2018-08-21 | International Business Machines Corporation | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap |
| JP6932997B2 (ja) | 2017-05-25 | 2021-09-08 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP7327905B2 (ja) * | 2017-07-07 | 2023-08-16 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP2019102556A (ja) * | 2017-11-29 | 2019-06-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| GB2572442A (en) * | 2018-03-29 | 2019-10-02 | Cambridge Entpr Ltd | Power semiconductor device with a double gate structure |
| JP7259215B2 (ja) | 2018-06-01 | 2023-04-18 | 富士電機株式会社 | 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法 |
| WO2020114666A1 (en) * | 2018-12-07 | 2020-06-11 | Abb Schweiz Ag | A vertical silicon carbide power mosfet and igbt and a method of manufacturing the same |
-
2020
- 2020-12-21 EP EP20216084.2A patent/EP4016645B1/en active Active
-
2021
- 2021-12-02 CN CN202180085616.1A patent/CN116615806A/zh active Pending
- 2021-12-02 JP JP2023537658A patent/JP7788457B2/ja active Active
- 2021-12-02 WO PCT/EP2021/083908 patent/WO2022135862A1/en not_active Ceased
- 2021-12-02 US US18/268,591 patent/US20240079454A1/en active Pending
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