JP7788457B2 - 炭化珪素パワーデバイスおよびその製造方法 - Google Patents

炭化珪素パワーデバイスおよびその製造方法

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Publication number
JP7788457B2
JP7788457B2 JP2023537658A JP2023537658A JP7788457B2 JP 7788457 B2 JP7788457 B2 JP 7788457B2 JP 2023537658 A JP2023537658 A JP 2023537658A JP 2023537658 A JP2023537658 A JP 2023537658A JP 7788457 B2 JP7788457 B2 JP 7788457B2
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JP
Japan
Prior art keywords
layer
silicon carbide
insulating
insulating material
power device
Prior art date
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JP2023537658A
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English (en)
Japanese (ja)
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JP2023554134A5 (enExample
JP2023554134A (ja
Inventor
クノール，ラース
ビルツ，ステファン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
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Hitachi Energy Ltd
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Publication of JP2023554134A publication Critical patent/JP2023554134A/ja
Publication of JP2023554134A5 publication Critical patent/JP2023554134A5/ja
Application granted granted Critical
Publication of JP7788457B2 publication Critical patent/JP7788457B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2023537658A 2020-12-21 2021-12-02 炭化珪素パワーデバイスおよびその製造方法 Active JP7788457B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20216084.2A EP4016645B1 (en) 2020-12-21 2020-12-21 Silicon carbide power device and method for manufacturing the same
EP20216084.2 2020-12-21
PCT/EP2021/083908 WO2022135862A1 (en) 2020-12-21 2021-12-02 Silicon carbide power device and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JP2023554134A JP2023554134A (ja) 2023-12-26
JP2023554134A5 JP2023554134A5 (enExample) 2025-06-16
JP7788457B2 true JP7788457B2 (ja) 2025-12-18

Family

ID=73856416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023537658A Active JP7788457B2 (ja) 2020-12-21 2021-12-02 炭化珪素パワーデバイスおよびその製造方法

Country Status (5)

Country Link
US (1) US20240079454A1 (enExample)
EP (1) EP4016645B1 (enExample)
JP (1) JP7788457B2 (enExample)
CN (1) CN116615806A (enExample)
WO (1) WO2022135862A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115497917B (zh) * 2022-08-05 2025-04-22 北京智慧能源研究院 一种碳化硅芯片封装结构
JP2024104186A (ja) * 2023-01-23 2024-08-02 株式会社デンソー 炭化珪素基板、炭化珪素ウェハ、炭化珪素半導体装置
US20240290879A1 (en) * 2023-02-27 2024-08-29 Globalfoundries U.S. Inc. Field-effect transistors with deposited gate dielectric layers
WO2025126658A1 (ja) * 2023-12-15 2025-06-19 富士電機株式会社 半導体装置および半導体装置の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001501372A (ja) 1996-09-30 2001-01-30 シーメンス アクチエンゲゼルシヤフト パワーｍｏｓ―デバイス
WO2017047286A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置
JP2017152487A (ja) 2016-02-23 2017-08-31 株式会社デンソー 化合物半導体装置の製造方法
JP2018200919A (ja) 2017-05-25 2018-12-20 富士電機株式会社 半導体装置及びその製造方法
JP2019102556A (ja) 2017-11-29 2019-06-24 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2019186126A1 (en) 2018-03-29 2019-10-03 Cambridge Enterprise Limited Power semiconductor device with a double gate structure
JP2019212718A (ja) 2018-06-01 2019-12-12 富士電機株式会社 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0851203A (ja) * 1994-08-08 1996-02-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
EP3227924B1 (en) 2016-02-02 2020-07-22 ABB Power Grids Switzerland AG Power semiconductor device
JP7144329B2 (ja) * 2017-01-25 2022-09-29 ローム株式会社 半導体装置
CN110366783B (zh) * 2017-03-03 2023-04-21 日立能源瑞士股份公司 碳化硅超结功率半导体器件及用于制造该器件的方法
US10056289B1 (en) * 2017-04-20 2018-08-21 International Business Machines Corporation Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap
JP7327905B2 (ja) * 2017-07-07 2023-08-16 株式会社デンソー 半導体装置およびその製造方法
WO2020114666A1 (en) * 2018-12-07 2020-06-11 Abb Schweiz Ag A vertical silicon carbide power mosfet and igbt and a method of manufacturing the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001501372A (ja) 1996-09-30 2001-01-30 シーメンス アクチエンゲゼルシヤフト パワーｍｏｓ―デバイス
WO2017047286A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置
JP2017152487A (ja) 2016-02-23 2017-08-31 株式会社デンソー 化合物半導体装置の製造方法
JP2018200919A (ja) 2017-05-25 2018-12-20 富士電機株式会社 半導体装置及びその製造方法
JP2019102556A (ja) 2017-11-29 2019-06-24 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2019186126A1 (en) 2018-03-29 2019-10-03 Cambridge Enterprise Limited Power semiconductor device with a double gate structure
JP2019212718A (ja) 2018-06-01 2019-12-12 富士電機株式会社 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法

Also Published As

Publication number Publication date
CN116615806A (zh) 2023-08-18
JP2023554134A (ja) 2023-12-26
EP4016645A1 (en) 2022-06-22
WO2022135862A1 (en) 2022-06-30
EP4016645B1 (en) 2025-08-13
US20240079454A1 (en) 2024-03-07

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